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IRF5802TRPBF IRF5802TRPBF INFINEON TECHNOLOGIES irf5802pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Kind of package: reel
Drain-source voltage: 150V
Drain current: 0.9A
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: TSOP6
на замовлення 2967 шт:
термін постачання 21-30 дні (днів)
15+26.9 грн
75+ 11.61 грн
206+ 10.95 грн
Мінімальне замовлення: 15
IRFTS8342TRPBF IRFTS8342TRPBF INFINEON TECHNOLOGIES irfts8342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
14+29.83 грн
25+ 19.1 грн
59+ 14.62 грн
160+ 13.81 грн
Мінімальне замовлення: 14
IRFTS9342TRPBF IRFTS9342TRPBF INFINEON TECHNOLOGIES irfts9342pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 4320 шт:
термін постачання 21-30 дні (днів)
15+27.7 грн
18+ 20.94 грн
87+ 9.92 грн
239+ 9.41 грн
Мінімальне замовлення: 15
IRF9358TRPBF IRF9358TRPBF INFINEON TECHNOLOGIES irf9358pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES irf9362pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRLMS2002TRPBF IRLMS2002TRPBF INFINEON TECHNOLOGIES irlms2002pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES irlts2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 3025 шт:
термін постачання 21-30 дні (днів)
18+22.71 грн
30+ 12.42 грн
50+ 10.73 грн
90+ 9.48 грн
246+ 8.96 грн
1000+ 8.67 грн
Мінімальне замовлення: 18
IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES irlts6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)
14+30.31 грн
20+ 19.1 грн
50+ 16.46 грн
59+ 14.55 грн
161+ 13.74 грн
1000+ 13.67 грн
Мінімальне замовлення: 14
BSL372SNH6327XTSA1 BSL372SNH6327XTSA1 INFINEON TECHNOLOGIES BSL372SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES BSL207SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 2866 шт:
термін постачання 21-30 дні (днів)
10+42.73 грн
11+ 34.24 грн
51+ 16.97 грн
140+ 16.09 грн
Мінімальне замовлення: 10
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES BSL606SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSOP-6
на замовлення 1932 шт:
термін постачання 21-30 дні (днів)
18+22.71 грн
25+ 18.96 грн
124+ 18.08 грн
250+ 17.34 грн
Мінімальне замовлення: 18
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 INFINEON TECHNOLOGIES BSL296SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Features of semiconductor devices: ESD protected gate
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.4A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
товар відсутній
BSL802SNH6327XTSA1 BSL802SNH6327XTSA1 INFINEON TECHNOLOGIES BSL802SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Technology: OptiMOS™ 2
Case: TSOP6
Mounting: SMD
On-state resistance: 31mΩ
Power dissipation: 2W
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
товар відсутній
BCR402WH6327XTSA1 BCR402WH6327XTSA1 INFINEON TECHNOLOGIES BCR402W.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Topology: single transistor
Operating voltage: 1.2...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
16+25.88 грн
28+ 13.23 грн
80+ 10.74 грн
Мінімальне замовлення: 16
IRF7907TRPBF IRF7907TRPBF INFINEON TECHNOLOGIES irf7907pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.1A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7910TRPBF IRF7910TRPBF INFINEON TECHNOLOGIES IRF7910TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIPS2051LTR AUIPS2051LTR INFINEON TECHNOLOGIES Infineon-AUIPS2052G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aae0b6fb04c51 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.3Ω
Kind of package: reel
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 70V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
Application: automotive industry
товар відсутній
AUIPS2052GTR AUIPS2052GTR INFINEON TECHNOLOGIES AUIPS2052GTR.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SO8; 2W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Kind of package: reel; tape
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 35V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
товар відсутній
IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES IRF9389TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1167 шт:
термін постачання 21-30 дні (днів)
15+28.25 грн
25+ 22.7 грн
49+ 17.56 грн
134+ 16.61 грн
Мінімальне замовлення: 15
IRS2336DMTRPBF INFINEON TECHNOLOGIES irs2336.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -350...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 655ns
Turn-off time: 580ns
товар відсутній
IR2132JPBF IR2132JPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+489.03 грн
3+ 328.45 грн
8+ 310.81 грн
IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES irs2336.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Kind of package: tube
Power: 2W
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Supply voltage: 11.5...20V DC
Turn-on time: 655ns
Turn-off time: 580ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 6
товар відсутній
IRS2336DJPBF IRS2336DJPBF INFINEON TECHNOLOGIES irs2336.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -350...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 655ns
Turn-off time: 580ns
товар відсутній
IR2135JPBF IR2135JPBF INFINEON TECHNOLOGIES IR2133JPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: tube
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+841.95 грн
2+ 581.95 грн
3+ 581.21 грн
5+ 549.62 грн
IR2238QPBF INFINEON TECHNOLOGIES ir2238q.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; MQFP64; -460÷220mA; 2W; Ch: 6
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; gate driver; high-/low-side
Output current: -460...220mA
Mounting: SMD
Supply voltage: 12.5...20V DC
Number of channels: 6
Operating temperature: -40...125°C
Power: 2W
Turn-on time: 550ns
Turn-off time: 550ns
Case: MQFP64
Topology: IGBT three-phase bridge
Voltage class: 1.2kV
товар відсутній
IRF8915TRPBF IRF8915TRPBF INFINEON TECHNOLOGIES irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 71A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IR2233JPBF IR2233JPBF INFINEON TECHNOLOGIES IR2133JPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+856.98 грн
2+ 555.5 грн
BDP950H6327XTSA1 BDP950H6327XTSA1 INFINEON TECHNOLOGIES BDP950.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 5W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
на замовлення 202 шт:
термін постачання 21-30 дні (днів)
8+46.88 грн
10+ 39.38 грн
25+ 35.42 грн
33+ 25.79 грн
90+ 24.39 грн
Мінімальне замовлення: 8
PVI5050NSPBF PVI5050NSPBF INFINEON TECHNOLOGIES IRSDS10210-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 4kV; Gull wing 8; PVI-NPbF
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4kV
Case: Gull wing 8
Turn-on time: 300µs
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
товар відсутній
IDD03SG60C IDD03SG60C INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 3A; PG-TO252-3; 38W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 38W
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Max. off-state voltage: 600V
Leakage current: 0.23µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD04SG60C IDD04SG60C INFINEON TECHNOLOGIES IDD04SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 4A; PG-TO252-3; 43W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO252-3
Kind of package: reel; tape
Leakage current: 0.3µA
Max. forward impulse current: 13.5A
Power dissipation: 43W
товар відсутній
IDD05SG60C IDD05SG60C INFINEON TECHNOLOGIES INFNS19785-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 5A; PG-TO252-3; 56W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 56W
Max. forward voltage: 2.1V
Load current: 5A
Max. forward impulse current: 18A
Max. off-state voltage: 600V
Leakage current: 0.4µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD08SG60C IDD08SG60C INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 8A; PG-TO252-3; 100W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 100W
Max. forward voltage: 1.8V
Load current: 8A
Max. forward impulse current: 36A
Max. off-state voltage: 600V
Leakage current: 0.6µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD09SG60C IDD09SG60C INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 9A; PG-TO252-3; 115W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 115W
Max. forward voltage: 1.8V
Load current: 9A
Max. forward impulse current: 42A
Max. off-state voltage: 600V
Leakage current: 0.7µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD10SG60C IDD10SG60C INFINEON TECHNOLOGIES IDD10SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 10A; PG-TO252-3; 120W
Technology: CoolSiC™ 3G; SiC
Power dissipation: 120W
Case: PG-TO252-3
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 0.8µA
Type of diode: Schottky rectifying
Max. forward impulse current: 44A
товар відсутній
IDD12SG60C IDD12SG60C INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 125W
Max. forward voltage: 1.8V
Load current: 12A
Max. forward impulse current: 51A
Max. off-state voltage: 600V
Leakage current: 1µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDH03SG60CXKSA2 IDH03SG60CXKSA2 INFINEON TECHNOLOGIES IDH03SG60C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; 38W; TO220-2
Max. forward impulse current: 9.7A
Power dissipation: 38W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.8V
Load current: 3A
Semiconductor structure: single diode
товар відсутній
IDH05SG60C IDH05SG60C INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 5A; 56W; PG-TO220-2
Mounting: THT
Kind of package: tube
Technology: CoolSiC™ 3G; SiC
Power dissipation: 56W
Max. forward voltage: 2.1V
Load current: 5A
Max. forward impulse current: 26A
Max. off-state voltage: 600V
Leakage current: 0.4µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
4+110.22 грн
Мінімальне замовлення: 4
IDH08SG60CXKSA2 IDH08SG60CXKSA2 INFINEON TECHNOLOGIES IDH08SG60C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; 100W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Power dissipation: 100W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Max. forward impulse current: 42A
Max. forward voltage: 1.8V
Leakage current: 0.6µA
товар відсутній
IDH09SG60C IDH09SG60C INFINEON TECHNOLOGIES IDH09SG60C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 9A; 115W; PG-TO220-2
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 49A
Leakage current: 0.7µA
Case: PG-TO220-2
Power dissipation: 115W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
товар відсутній
IDH10SG60C IDH10SG60C INFINEON TECHNOLOGIES IDH10SG60C-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; 120W; PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Power dissipation: 120W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 0.8µA
Type of diode: Schottky rectifying
Max. forward impulse current: 51A
товар відсутній
IDH12SG60C IDH12SG60C INFINEON TECHNOLOGIES IDH12SG60C_rev2.1_.pdf?folderId=db3a304312bae05f0112bd10dab60002&fileId=db3a30431f848401011fad82e993468c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 125W; PG-TO220-2
Mounting: THT
Kind of package: tube
Technology: CoolSiC™ 3G; SiC
Power dissipation: 125W
Max. forward voltage: 1.8V
Load current: 12A
Max. forward impulse current: 59A
Max. off-state voltage: 600V
Leakage current: 1µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IRLP3034PBF IRLP3034PBF INFINEON TECHNOLOGIES irlp3034pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
2+310.19 грн
5+ 201.33 грн
12+ 190.31 грн
Мінімальне замовлення: 2
IRLH5034TRPBF IRLH5034TRPBF INFINEON TECHNOLOGIES irlh5034pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
товар відсутній
IRF100B201 IRF100B201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
2+204.95 грн
3+ 172.67 грн
7+ 131.53 грн
18+ 124.91 грн
Мінімальне замовлення: 2
IRF100S201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhanced
товар відсутній
IRFL4310TRPBF IRFL4310TRPBF INFINEON TECHNOLOGIES irfl4310pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFB7434PBF IRFB7434PBF INFINEON TECHNOLOGIES IRFB7434PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
3+142.55 грн
8+ 109.48 грн
22+ 103.6 грн
Мінімальне замовлення: 3
IPB029N06N3GATMA1 IPB029N06N3GATMA1 INFINEON TECHNOLOGIES IPB029N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES IPW60R041P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPB049N08N5ATMA1 IPB049N08N5ATMA1 INFINEON TECHNOLOGIES IPB049N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 320A; 125W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 320A
Power dissipation: 125W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
TLF50201EL TLF50201EL INFINEON TECHNOLOGIES TLF50201EL.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
товар відсутній
TLF50251EL TLF50251EL INFINEON TECHNOLOGIES TLF50251EL.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+197.83 грн
Мінімальне замовлення: 2
D740N44TXPSA1 INFINEON TECHNOLOGIES D740Nxx.pdf Category: Diodes - others
Description: Diode: hockey-puck rectifying; 4.4kV; 750A; 1.54kA; BG-D5726K-1
Mounting: Press-Pack
Case: BG-D5726K-1
Type of diode: hockey-puck rectifying
Max. off-state voltage: 4.4kV
Max. load current: 1.54kA
Max. forward voltage: 1.45V
Load current: 750A
Max. forward impulse current: 11kA
товар відсутній
D740N48TXPSA1 INFINEON TECHNOLOGIES D740Nxx.pdf Category: Diodes - others
Description: Diode: hockey-puck rectifying; 4.8kV; 750A; 1.54kA; BG-D5726K-1
Mounting: Press-Pack
Case: BG-D5726K-1
Type of diode: hockey-puck rectifying
Max. off-state voltage: 4.8kV
Max. load current: 1.54kA
Max. forward voltage: 1.45V
Load current: 750A
Max. forward impulse current: 11kA
товар відсутній
T740N22TOFXPSA1 INFINEON TECHNOLOGIES T740N_ser.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 1.5A; 745A; Igt: 250mA
Max. off-state voltage: 2.2kV
Load current: 745A
Max. load current: 1.5A
Case: BG-T5814K0-1
Max. forward impulse current: 13kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
T740N26TOFXPSA1 INFINEON TECHNOLOGIES T740N_ser.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 2.6kV; Ifmax: 1.5A; 745A; Igt: 250mA
Max. off-state voltage: 2.6kV
Load current: 745A
Case: BG-T5814K0-1
Max. forward impulse current: 13kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5A
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
TZ740N22KOF  INFINEON TECHNOLOGIES TZ740N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 740A; BG-PB70AT-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 740A
Case: BG-PB70AT-1
Max. forward voltage: 1.51V
Max. forward impulse current: 30kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
IDH12G65C6XKSA1 IDH12G65C6XKSA1 INFINEON TECHNOLOGIES IDH12G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 81W; PG-TO220-2
Mounting: THT
Kind of package: tube
Power dissipation: 81W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 51A
Leakage current: 92µA
товар відсутній
IRF5802TRPBF irf5802pbf.pdf
IRF5802TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Kind of package: reel
Drain-source voltage: 150V
Drain current: 0.9A
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: TSOP6
на замовлення 2967 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+26.9 грн
75+ 11.61 грн
206+ 10.95 грн
Мінімальне замовлення: 15
IRFTS8342TRPBF irfts8342pbf.pdf
IRFTS8342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
14+29.83 грн
25+ 19.1 грн
59+ 14.62 грн
160+ 13.81 грн
Мінімальне замовлення: 14
IRFTS9342TRPBF irfts9342pbf.pdf
IRFTS9342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 4320 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+27.7 грн
18+ 20.94 грн
87+ 9.92 грн
239+ 9.41 грн
Мінімальне замовлення: 15
IRF9358TRPBF irf9358pbf.pdf
IRF9358TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF9362TRPBF irf9362pbf.pdf
IRF9362TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRLMS2002TRPBF description irlms2002pbf.pdf
IRLMS2002TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRLTS2242TRPBF irlts2242pbf.pdf
IRLTS2242TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 3025 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+22.71 грн
30+ 12.42 грн
50+ 10.73 грн
90+ 9.48 грн
246+ 8.96 грн
1000+ 8.67 грн
Мінімальне замовлення: 18
IRLTS6342TRPBF irlts6342pbf.pdf
IRLTS6342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
14+30.31 грн
20+ 19.1 грн
50+ 16.46 грн
59+ 14.55 грн
161+ 13.74 грн
1000+ 13.67 грн
Мінімальне замовлення: 14
BSL372SNH6327XTSA1 BSL372SNH6327XTSA1.pdf
BSL372SNH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1-DTE.pdf
BSL207SPH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 2866 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
10+42.73 грн
11+ 34.24 грн
51+ 16.97 грн
140+ 16.09 грн
Мінімальне замовлення: 10
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1.pdf
BSL606SNH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSOP-6
на замовлення 1932 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+22.71 грн
25+ 18.96 грн
124+ 18.08 грн
250+ 17.34 грн
Мінімальне замовлення: 18
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1.pdf
BSL296SNH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Features of semiconductor devices: ESD protected gate
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.4A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
товар відсутній
BSL802SNH6327XTSA1 BSL802SNH6327XTSA1.pdf
BSL802SNH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Technology: OptiMOS™ 2
Case: TSOP6
Mounting: SMD
On-state resistance: 31mΩ
Power dissipation: 2W
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
товар відсутній
BCR402WH6327XTSA1 BCR402W.pdf
BCR402WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Topology: single transistor
Operating voltage: 1.2...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
16+25.88 грн
28+ 13.23 грн
80+ 10.74 грн
Мінімальне замовлення: 16
IRF7907TRPBF irf7907pbf.pdf
IRF7907TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.1A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7910TRPBF IRF7910TRPBF.pdf
IRF7910TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIPS2051LTR Infineon-AUIPS2052G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aae0b6fb04c51
AUIPS2051LTR
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.3Ω
Kind of package: reel
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 70V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
Application: automotive industry
товар відсутній
AUIPS2052GTR AUIPS2052GTR.pdf
AUIPS2052GTR
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SO8; 2W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Kind of package: reel; tape
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 35V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
товар відсутній
IRF9389TRPBF IRF9389TRPBF.pdf
IRF9389TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1167 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+28.25 грн
25+ 22.7 грн
49+ 17.56 грн
134+ 16.61 грн
Мінімальне замовлення: 15
IRS2336DMTRPBF irs2336.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -350...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 655ns
Turn-off time: 580ns
товар відсутній
IR2132JPBF description IR2132JPBF.pdf
IR2132JPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+489.03 грн
3+ 328.45 грн
8+ 310.81 грн
IRS23364DJPBF irs2336.pdf
IRS23364DJPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Kind of package: tube
Power: 2W
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Supply voltage: 11.5...20V DC
Turn-on time: 655ns
Turn-off time: 580ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 6
товар відсутній
IRS2336DJPBF irs2336.pdf
IRS2336DJPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -350...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 655ns
Turn-off time: 580ns
товар відсутній
IR2135JPBF IR2133JPBF.pdf
IR2135JPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: tube
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+841.95 грн
2+ 581.95 грн
3+ 581.21 грн
5+ 549.62 грн
IR2238QPBF ir2238q.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; MQFP64; -460÷220mA; 2W; Ch: 6
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; gate driver; high-/low-side
Output current: -460...220mA
Mounting: SMD
Supply voltage: 12.5...20V DC
Number of channels: 6
Operating temperature: -40...125°C
Power: 2W
Turn-on time: 550ns
Turn-off time: 550ns
Case: MQFP64
Topology: IGBT three-phase bridge
Voltage class: 1.2kV
товар відсутній
IRF8915TRPBF irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91
IRF8915TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 71A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IR2233JPBF IR2133JPBF.pdf
IR2233JPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+856.98 грн
2+ 555.5 грн
BDP950H6327XTSA1 BDP950.pdf
BDP950H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 5W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
на замовлення 202 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+46.88 грн
10+ 39.38 грн
25+ 35.42 грн
33+ 25.79 грн
90+ 24.39 грн
Мінімальне замовлення: 8
PVI5050NSPBF IRSDS10210-1.pdf?t.download=true&u=5oefqw
PVI5050NSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 4kV; Gull wing 8; PVI-NPbF
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4kV
Case: Gull wing 8
Turn-on time: 300µs
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
товар відсутній
IDD03SG60C
IDD03SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 3A; PG-TO252-3; 38W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 38W
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Max. off-state voltage: 600V
Leakage current: 0.23µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD04SG60C IDD04SG60C-DTE.pdf
IDD04SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 4A; PG-TO252-3; 43W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO252-3
Kind of package: reel; tape
Leakage current: 0.3µA
Max. forward impulse current: 13.5A
Power dissipation: 43W
товар відсутній
IDD05SG60C INFNS19785-1.pdf?t.download=true&u=5oefqw
IDD05SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 5A; PG-TO252-3; 56W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 56W
Max. forward voltage: 2.1V
Load current: 5A
Max. forward impulse current: 18A
Max. off-state voltage: 600V
Leakage current: 0.4µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD08SG60C
IDD08SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 8A; PG-TO252-3; 100W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 100W
Max. forward voltage: 1.8V
Load current: 8A
Max. forward impulse current: 36A
Max. off-state voltage: 600V
Leakage current: 0.6µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD09SG60C
IDD09SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 9A; PG-TO252-3; 115W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 115W
Max. forward voltage: 1.8V
Load current: 9A
Max. forward impulse current: 42A
Max. off-state voltage: 600V
Leakage current: 0.7µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDD10SG60C IDD10SG60C-DTE.pdf
IDD10SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 10A; PG-TO252-3; 120W
Technology: CoolSiC™ 3G; SiC
Power dissipation: 120W
Case: PG-TO252-3
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 0.8µA
Type of diode: Schottky rectifying
Max. forward impulse current: 44A
товар відсутній
IDD12SG60C
IDD12SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 125W
Max. forward voltage: 1.8V
Load current: 12A
Max. forward impulse current: 51A
Max. off-state voltage: 600V
Leakage current: 1µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IDH03SG60CXKSA2 IDH03SG60C.pdf
IDH03SG60CXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; 38W; TO220-2
Max. forward impulse current: 9.7A
Power dissipation: 38W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.8V
Load current: 3A
Semiconductor structure: single diode
товар відсутній
IDH05SG60C
IDH05SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 5A; 56W; PG-TO220-2
Mounting: THT
Kind of package: tube
Technology: CoolSiC™ 3G; SiC
Power dissipation: 56W
Max. forward voltage: 2.1V
Load current: 5A
Max. forward impulse current: 26A
Max. off-state voltage: 600V
Leakage current: 0.4µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+110.22 грн
Мінімальне замовлення: 4
IDH08SG60CXKSA2 IDH08SG60C.pdf
IDH08SG60CXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; 100W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Power dissipation: 100W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Max. forward impulse current: 42A
Max. forward voltage: 1.8V
Leakage current: 0.6µA
товар відсутній
IDH09SG60C IDH09SG60C.pdf
IDH09SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 9A; 115W; PG-TO220-2
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 49A
Leakage current: 0.7µA
Case: PG-TO220-2
Power dissipation: 115W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
товар відсутній
IDH10SG60C IDH10SG60C-DTE.pdf
IDH10SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; 120W; PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Power dissipation: 120W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 0.8µA
Type of diode: Schottky rectifying
Max. forward impulse current: 51A
товар відсутній
IDH12SG60C IDH12SG60C_rev2.1_.pdf?folderId=db3a304312bae05f0112bd10dab60002&fileId=db3a30431f848401011fad82e993468c
IDH12SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 125W; PG-TO220-2
Mounting: THT
Kind of package: tube
Technology: CoolSiC™ 3G; SiC
Power dissipation: 125W
Max. forward voltage: 1.8V
Load current: 12A
Max. forward impulse current: 59A
Max. off-state voltage: 600V
Leakage current: 1µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
IRLP3034PBF irlp3034pbf.pdf
IRLP3034PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+310.19 грн
5+ 201.33 грн
12+ 190.31 грн
Мінімальне замовлення: 2
IRLH5034TRPBF irlh5034pbf.pdf
IRLH5034TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
товар відсутній
IRF100B201 IRF100x201.pdf
IRF100B201
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+204.95 грн
3+ 172.67 грн
7+ 131.53 грн
18+ 124.91 грн
Мінімальне замовлення: 2
IRF100S201 IRF100x201.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhanced
товар відсутній
IRFL4310TRPBF irfl4310pbf.pdf
IRFL4310TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFB7434PBF IRFB7434PBF.pdf
IRFB7434PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+142.55 грн
8+ 109.48 грн
22+ 103.6 грн
Мінімальне замовлення: 3
IPB029N06N3GATMA1 IPB029N06N3G-DTE.pdf
IPB029N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPW60R041P6FKSA1 IPW60R041P6-DTE.pdf
IPW60R041P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPB049N08N5ATMA1 IPB049N08N5-DTE.pdf
IPB049N08N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 320A; 125W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 320A
Power dissipation: 125W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
TLF50201EL TLF50201EL.pdf
TLF50201EL
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
товар відсутній
TLF50251EL TLF50251EL.pdf
TLF50251EL
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+197.83 грн
Мінімальне замовлення: 2
D740N44TXPSA1 D740Nxx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying; 4.4kV; 750A; 1.54kA; BG-D5726K-1
Mounting: Press-Pack
Case: BG-D5726K-1
Type of diode: hockey-puck rectifying
Max. off-state voltage: 4.4kV
Max. load current: 1.54kA
Max. forward voltage: 1.45V
Load current: 750A
Max. forward impulse current: 11kA
товар відсутній
D740N48TXPSA1 D740Nxx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying; 4.8kV; 750A; 1.54kA; BG-D5726K-1
Mounting: Press-Pack
Case: BG-D5726K-1
Type of diode: hockey-puck rectifying
Max. off-state voltage: 4.8kV
Max. load current: 1.54kA
Max. forward voltage: 1.45V
Load current: 750A
Max. forward impulse current: 11kA
товар відсутній
T740N22TOFXPSA1 T740N_ser.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 1.5A; 745A; Igt: 250mA
Max. off-state voltage: 2.2kV
Load current: 745A
Max. load current: 1.5A
Case: BG-T5814K0-1
Max. forward impulse current: 13kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
T740N26TOFXPSA1 T740N_ser.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.6kV; Ifmax: 1.5A; 745A; Igt: 250mA
Max. off-state voltage: 2.6kV
Load current: 745A
Case: BG-T5814K0-1
Max. forward impulse current: 13kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5A
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
TZ740N22KOF  TZ740N22KOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 740A; BG-PB70AT-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 740A
Case: BG-PB70AT-1
Max. forward voltage: 1.51V
Max. forward impulse current: 30kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
IDH12G65C6XKSA1 IDH12G65C6.pdf
IDH12G65C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 81W; PG-TO220-2
Mounting: THT
Kind of package: tube
Power dissipation: 81W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 51A
Leakage current: 92µA
товар відсутній
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