Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136439) > Сторінка 2238 з 2274
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IDH16G65C6XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 97W; PG-TO220-2 Mounting: THT Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 65A Leakage current: 123µA Power dissipation: 97W Kind of package: tube Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Heatsink thickness: 1.17...1.37mm Case: PG-TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.25V |
товар відсутній |
|||||||||||||
 |
AUIRFB8405 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhanced |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
AUIRFB8407 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB Power dissipation: 230W Polarisation: unipolar Kind of package: tube Gate charge: 150nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220AB Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
AUIRFB8409 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 195A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
| AUIRFR8405TRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 804A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.98mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
AUIRFSL8403 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 87A Power dissipation: 99W Case: TO262 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 62nC Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
AUIRFSL8407 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262 Power dissipation: 230W Polarisation: unipolar Gate charge: 150nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO262 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
 |
IR2181SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: undervoltage UVP |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BGT24LTR11N16E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape Case: TSNP16 Mounting: SMD Kind of package: reel; tape Frequency: 24...24.25GHz Operating temperature: -40...85°C Noise Figure: 10dB Open-loop gain: 26dB DC supply current: 45mA Type of integrated circuit: interface Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: MMIC; RF transceiver Supply voltage: 3.2...3.4V DC |
товар відсутній |
|||||||||||||
 |
BGT24MTR11E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Type of integrated circuit: interface Kind of integrated circuit: MMIC; RF transceiver Interface: SPI Case: VQFN32 Mounting: SMD Operating temperature: -40...105°C Frequency: 24...26GHz Kind of package: reel; tape Supply voltage: 3.135...3.465V DC DC supply current: 150mA Number of receivers: 1 Open-loop gain: 26dB Number of transmitters: 1 Noise Figure: 12dB |
товар відсутній |
|||||||||||||
|
|
BGT24MTR12E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Type of integrated circuit: interface Kind of integrated circuit: MMIC; RF transceiver Interface: SPI Case: VQFN32 Mounting: SMD Operating temperature: -40...105°C Frequency: 24...24.25GHz Kind of package: reel; tape Supply voltage: 3.135...3.465V DC DC supply current: 210mA Number of receivers: 2 Open-loop gain: 26dB Number of transmitters: 1 Noise Figure: 12dB |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
SPW20N60S5 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
IRLZ34NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 56W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| IRLZ34NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 21A Pulsed drain current: 110A Power dissipation: 68W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| BCR602XTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1 Output current: 10mA Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: linear dimming; PWM Protection: overheating OTP Kind of integrated circuit: current regulator; LED driver Mounting: SMD Case: PG-SOT23-6 Operating voltage: 8...60V |
товар відсутній |
||||||||||||||
|
|
TLE4241GMXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; current regulator,LED driver; Litix™; PG-DSO-8; 70mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Technology: Litix™ Case: PG-DSO-8 Output current: 70mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 4...45V |
товар відсутній |
|||||||||||||
 |
IRFP3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
IRFP3415PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 133.3nC Kind of package: tube Kind of channel: enhanced |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
IRFP3703PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 209nC Kind of package: tube Kind of channel: enhanced |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 50mA Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Kind of channel: depleted |
на замовлення 1974 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BSP129H6906XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.35A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: depleted |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
IRS2304PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 185ns |
товар відсутній |
|||||||||||||
|
|
IRS2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 185ns |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BB535E7904HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF Type of diode: varicap Mounting: SMD Max. off-state voltage: 30V Load current: 20mA Semiconductor structure: single diode Features of semiconductor devices: RF Capacitance: 2...20pF Case: SOD323 Kind of package: reel; tape Leakage current: 0.2µA |
на замовлення 3868 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BB639E7904HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 2.4...40pF |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BB85702VH7902XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 0.45...7.2pF |
товар відсутній |
|||||||||||||
|
|
BBY5502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA Type of diode: varicap Mounting: SMD Max. off-state voltage: 16V Load current: 20mA Semiconductor structure: single diode Features of semiconductor devices: RF Capacitance: 5.5...19.6pF Kind of package: reel; tape Case: SC79 Leakage current: 0.1µA |
на замовлення 2101 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BAT6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 3V; 0.1A; SC79; 100mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 3V Load current: 0.1A Semiconductor structure: single diode Case: SC79 Power dissipation: 0.1W |
на замовлення 2780 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Mounting: SMD Case: SC79 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
товар відсутній |
|||||||||||||
| ETD630N16P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 635A Max. load current: 700A Case: BG-PB60ECO-1 Max. forward voltage: 1.37V Max. forward impulse current: 19.8kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
||||||||||||||
| ETT630N16P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw Type of module: thyristor Case: BG-PB60ECO-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.37V Load current: 635A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 19.8kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
||||||||||||||
 |
IPA65R650CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| TZ630N28KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2.2kV Load current: 630A Case: BG-PB70-1 Max. forward voltage: 2.18V Max. forward impulse current: 25.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
||||||||||||||
 |
XC8362FRIABFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 500B SRAM; 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
 |
BSC110N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
BSC117N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 11.7mΩ Power dissipation: 50W Drain current: 49A Drain-source voltage: 80V Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
BSC118N10NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 11.8mΩ Power dissipation: 114W Drain current: 71A Drain-source voltage: 100V Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
BSC120N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 33A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
BSC120N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 12.3mΩ Power dissipation: 66W Drain current: 55A Drain-source voltage: 80V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
на замовлення 2887 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BSC123N10LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 12.3mΩ Power dissipation: 114W Drain current: 71A Drain-source voltage: 100V Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
BSC12DN20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 0.125Ω Power dissipation: 50W Drain current: 11.3A Drain-source voltage: 200V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
BSC130P03LSGAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -22.5A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±25V On-state resistance: 13mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
BSC160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 60W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
BSC16DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 62.5W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 250V Drain current: 10.9A On-state resistance: 0.165Ω Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
BSC190N12NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 19mΩ Power dissipation: 69W Drain current: 44A Drain-source voltage: 120V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
 |
BSC190N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TSDSON-8 On-state resistance: 19mΩ Power dissipation: 125W Drain current: 50A Drain-source voltage: 150V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
на замовлення 2154 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BSC196N10NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 19.6mΩ Power dissipation: 78W Drain current: 45A Drain-source voltage: 100V Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
BTS3118N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V |
на замовлення 2527 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Case: SC79 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
на замовлення 2470 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Type of diode: switching Max. off-state voltage: 150V Load current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Max. forward voltage: 1.1V Kind of package: reel; tape |
на замовлення 1575 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
IRF250P224 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 68A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 203nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
IRF250P225 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 49A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
IRFZ46NLPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhanced |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
IRFZ46NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 46A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
IR2172SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V Type of integrated circuit: driver Kind of integrated circuit: current sensor Case: SO8 Output current: 20mA Power: 625mW Supply voltage: 9.5...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V |
товар відсутній |
|||||||||||||
|
|
IPZ40N04S53R1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhanced Application: automotive industry |
товар відсутній |
|||||||||||||
|
|
IPZ40N04S5-5R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced Application: automotive industry |
товар відсутній |
|||||||||||||
|
|
IPZ40N04S5-8R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 34W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 9.9mΩ Mounting: SMD Gate charge: 13.7nC Kind of channel: enhanced Application: automotive industry |
товар відсутній |
|||||||||||||
|
|
IPZ40N04S5L-2R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 52nC Kind of channel: enhanced Application: automotive industry |
товар відсутній |
| IDH16G65C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 97W; PG-TO220-2
Mounting: THT
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 65A
Leakage current: 123µA
Power dissipation: 97W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 97W; PG-TO220-2
Mounting: THT
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 65A
Leakage current: 123µA
Power dissipation: 97W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
товар відсутній
| AUIRFB8405 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 337.1 грн |
| 3+ | 276.28 грн |
| 4+ | 246.15 грн |
| 10+ | 232.93 грн |
| AUIRFB8407 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
товар відсутній
| AUIRFB8409 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| AUIRFR8405TRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhanced
товар відсутній
| AUIRFSL8403 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
товар відсутній
| AUIRFSL8407 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
товар відсутній
| IR2181SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 273 грн |
| 5+ | 179.29 грн |
| 14+ | 169.73 грн |
| BGT24LTR11N16E6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
Frequency: 24...24.25GHz
Operating temperature: -40...85°C
Noise Figure: 10dB
Open-loop gain: 26dB
DC supply current: 45mA
Type of integrated circuit: interface
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Supply voltage: 3.2...3.4V DC
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
Frequency: 24...24.25GHz
Operating temperature: -40...85°C
Noise Figure: 10dB
Open-loop gain: 26dB
DC supply current: 45mA
Type of integrated circuit: interface
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Supply voltage: 3.2...3.4V DC
товар відсутній
| BGT24MTR11E6327XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
товар відсутній
| BGT24MTR12E6327XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
на замовлення 475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 764.4 грн |
| SPW20N60S5 | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 694.77 грн |
| 2+ | 445.28 грн |
| 6+ | 421.03 грн |
| IRLZ34NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.93 грн |
| 12+ | 32.18 грн |
| IRLZ34NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BCR602XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Output current: 10mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Case: PG-SOT23-6
Operating voltage: 8...60V
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Output current: 10mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Case: PG-SOT23-6
Operating voltage: 8...60V
товар відсутній
| TLE4241GMXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; Litix™; PG-DSO-8; 70mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Technology: Litix™
Case: PG-DSO-8
Output current: 70mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4...45V
Category: LED drivers
Description: IC: driver; current regulator,LED driver; Litix™; PG-DSO-8; 70mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Technology: Litix™
Case: PG-DSO-8
Output current: 70mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4...45V
товар відсутній
| IRFP3006PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.9 грн |
| 3+ | 307.87 грн |
| 8+ | 290.97 грн |
| IRFP3415PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 177.25 грн |
| 9+ | 101.4 грн |
| IRFP3703PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.6 грн |
| 3+ | 205 грн |
| BSP129H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depleted
на замовлення 1974 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.39 грн |
| 35+ | 25.13 грн |
| 95+ | 23.73 грн |
| 1000+ | 23.22 грн |
| BSP129H6906XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: depleted
на замовлення 109 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.23 грн |
| 25+ | 34.98 грн |
| 28+ | 31.52 грн |
| 76+ | 29.83 грн |
| IRS2304PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
товар відсутній
| IRS2304SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.87 грн |
| 5+ | 85.97 грн |
| 13+ | 69.8 грн |
| 25+ | 68.33 грн |
| 34+ | 66.13 грн |
| BB535E7904HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2...20pF
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.2µA
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2...20pF
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.2µA
на замовлення 3868 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 18.2 грн |
| 53+ | 6.98 грн |
| 100+ | 5.66 грн |
| 161+ | 5.29 грн |
| 443+ | 5 грн |
| 3000+ | 4.78 грн |
| BB639E7904HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
на замовлення 880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.32 грн |
| 27+ | 14.11 грн |
| 31+ | 11.9 грн |
| 100+ | 7.41 грн |
| 216+ | 4.02 грн |
| 592+ | 3.8 грн |
| BB85702VH7902XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
товар відсутній
| BBY5502VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 5.5...19.6pF
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 5.5...19.6pF
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
на замовлення 2101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 30.31 грн |
| 25+ | 16.46 грн |
| 60+ | 14.48 грн |
| 164+ | 13.67 грн |
| BAT6302VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 3V; 0.1A; SC79; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 3V; 0.1A; SC79; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79
Power dissipation: 0.1W
на замовлення 2780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 33+ | 12.34 грн |
| 36+ | 10.29 грн |
| 100+ | 9.11 грн |
| 108+ | 7.94 грн |
| 297+ | 7.49 грн |
| BAR6302VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
товар відсутній
| ETD630N16P60HPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Max. load current: 700A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Max. load current: 700A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| ETT630N16P60HPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.37V
Load current: 635A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 19.8kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.37V
Load current: 635A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 19.8kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IPA65R650CEXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.75 грн |
| 6+ | 71.27 грн |
| 10+ | 64.66 грн |
| 15+ | 58.78 грн |
| 40+ | 55.11 грн |
| TZ630N28KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 630A
Case: BG-PB70-1
Max. forward voltage: 2.18V
Max. forward impulse current: 25.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 630A
Case: BG-PB70-1
Max. forward voltage: 2.18V
Max. forward impulse current: 25.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| XC8362FRIABFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| BSC110N06NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC117N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.7mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.7mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
| BSC118N10NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.8mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.8mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
| BSC120N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC120N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC123N08NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 66W
Drain current: 55A
Drain-source voltage: 80V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 66W
Drain current: 55A
Drain-source voltage: 80V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
на замовлення 2887 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.5 грн |
| 10+ | 77.15 грн |
| 21+ | 43.35 грн |
| BSC123N10LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
| BSC12DN20NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 0.125Ω
Power dissipation: 50W
Drain current: 11.3A
Drain-source voltage: 200V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 0.125Ω
Power dissipation: 50W
Drain current: 11.3A
Drain-source voltage: 200V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
| BSC130P03LSGAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -22.5A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -22.5A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC160N10NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC16DN25NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 250V
Drain current: 10.9A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 250V
Drain current: 10.9A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
товар відсутній
| BSC190N12NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19mΩ
Power dissipation: 69W
Drain current: 44A
Drain-source voltage: 120V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19mΩ
Power dissipation: 69W
Drain current: 44A
Drain-source voltage: 120V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
| BSC190N15NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TSDSON-8
On-state resistance: 19mΩ
Power dissipation: 125W
Drain current: 50A
Drain-source voltage: 150V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TSDSON-8
On-state resistance: 19mΩ
Power dissipation: 125W
Drain current: 50A
Drain-source voltage: 150V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
на замовлення 2154 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.18 грн |
| 8+ | 117.57 грн |
| 10+ | 116.83 грн |
| 21+ | 110.95 грн |
| 25+ | 108.75 грн |
| 100+ | 106.54 грн |
| BSC196N10NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19.6mΩ
Power dissipation: 78W
Drain current: 45A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19.6mΩ
Power dissipation: 78W
Drain current: 45A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
| BTS3118N |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
на замовлення 2527 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.42 грн |
| 13+ | 67.6 грн |
| 35+ | 63.93 грн |
| BAR6402VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.56 грн |
| 50+ | 8.08 грн |
| 100+ | 7.35 грн |
| 150+ | 5.8 грн |
| 410+ | 5.51 грн |
| BAR6405WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
на замовлення 1575 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.53 грн |
| 23+ | 16.31 грн |
| 100+ | 11.17 грн |
| 107+ | 8.08 грн |
| 294+ | 7.64 грн |
| 1000+ | 7.42 грн |
| IRF250P224 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF250P225 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFZ46NLPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.21 грн |
| 10+ | 61.72 грн |
| 17+ | 53.64 грн |
| 45+ | 50.7 грн |
| IRFZ46NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.35 грн |
| 10+ | 45.78 грн |
| 27+ | 32.33 грн |
| 74+ | 30.57 грн |
| IR2172SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
товар відсутній
| IPZ40N04S53R1ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| IPZ40N04S5-5R4 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| IPZ40N04S5-8R4 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| IPZ40N04S5L-2R8 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhanced
Application: automotive industry
товар відсутній