BSB014N04LX3GXUMA1 Infineon Technologies
на замовлення 3269 шт:
термін постачання 21-30 дні (днів)
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Технічний опис BSB014N04LX3GXUMA1 Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V.
Інші пропозиції BSB014N04LX3GXUMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BSB014N04LX3GXUMA1 Код товару: 168892 |
Транзистори > Польові N-канальні |
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BSB014N04LX3GXUMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R |
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BSB014N04LX3GXUMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R |
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BSB014N04LX3GXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Mounting: SMD Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5000 шт |
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BSB014N04LX3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V |
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BSB014N04LX3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V |
товар відсутній |
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BSB014N04LX3GXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Mounting: SMD Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |