Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137776) > Сторінка 2236 з 2297
Фото | Назва | Виробник | Інформація |
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AUIRF1010ZSTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 94A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSP452 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.16Ω Technology: Classic PROFET Output voltage: 40V |
на замовлення 4068 шт: термін постачання 21-30 дні (днів) |
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IGCM15F60GA | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -15...15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 29W |
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XMC4700 RELAX KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144 Type of development kit: ARM Infineon Family: XMC4700 Kit contents: development board with XMCmicrocontroller Components: XMC4700-F144 Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2 Kind of connector: pin strips; RJ45; USB B micro x2 Application: building automation; CAV; motors; photovoltaics Number of add-on connectors: 1 Kind of architecture: Cortex M4 |
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XMC4800 RELAX ETHERCAT KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144 Type of development kit: ARM Infineon Family: XMC4800 Kit contents: development board with XMCmicrocontroller; extension board Components: XMC4800-F144 Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2 Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2 Application: building automation; CAV; EtherCAT; motors; photovoltaics Number of add-on connectors: 2 Kind of architecture: Cortex M4 |
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IRFB4110GPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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IRFB4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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IR2153DPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Mounting: THT Operating temperature: -40...125°C Power: 1W Number of channels: 2 Type of integrated circuit: driver Turn-off time: 40ns Turn-on time: 80ns Supply voltage: 10...15.6V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Kind of package: tube Case: DIP8 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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IRS2153DPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Mounting: THT Power: 1W Case: DIP8 Kind of package: tube Operating temperature: -40...125°C Supply voltage: 10.1...16.8V DC Number of channels: 2 Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns Output current: -260...180mA Type of integrated circuit: driver |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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IRS2153DSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Mounting: SMD Power: 625mW Case: SO8 Kind of package: tube Operating temperature: -40...125°C Supply voltage: 10.1...16.8V DC Number of channels: 2 Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns Output current: -260...180mA Type of integrated circuit: driver |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IKP10N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 110W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 62nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IGP30N60H3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 |
на замовлення 162 шт: термін постачання 21-30 дні (днів) |
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IRF1404LPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Drain-source voltage: 40V Drain current: 162A Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: THT Case: TO262 |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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IRF1404PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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IRF1404STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF1404STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF1404ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Kind of package: tube Drain-source voltage: 40V Drain current: 190A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET Power dissipation: 220W Polarisation: unipolar Gate charge: 0.1µC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
на замовлення 992 шт: термін постачання 21-30 дні (днів) |
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IRF1404ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF1404 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 202A; 333W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 202A Power dissipation: 333W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced |
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AUIRF1404S | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhanced |
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AUIRF1404STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF1404ZSTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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TLE4905LHALA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; unipolar; P-SSO-3-2; 5÷18mT; Usup: 3.8÷24VDC; THT Supply voltage: 3.8...24V DC Mounting: THT Case: P-SSO-3-2 Operating temperature: -40...150°C Kind of sensor: unipolar Type of sensor: Hall Range of detectable magnetic field: 5...18mT |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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TLE4945L | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT Mounting: THT Case: P-SSO-3-2 Operating temperature: -40...150°C Range of detectable magnetic field: -10...10mT Supply voltage: 3.8...24V DC Kind of sensor: bipolar Type of sensor: Hall |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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XMC4800E196F1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH Operating temperature: -40...85°C Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Type of integrated circuit: ARM microcontroller Number of inputs/outputs: 155 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Memory: 200kB SRAM; 1MB FLASH Case: PG-LFBGA-196 |
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XMC4800E196F1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-196 Memory: 276kB SRAM; 1.5MB FLASH Number of inputs/outputs: 155 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800E196F2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH Operating temperature: -40...85°C Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Type of integrated circuit: ARM microcontroller Number of inputs/outputs: 155 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Memory: 352kB SRAM; 2MB FLASH Case: PG-LFBGA-196 |
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XMC4800E196K1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH Operating temperature: -40...125°C Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Type of integrated circuit: ARM microcontroller Number of inputs/outputs: 155 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Memory: 200kB SRAM; 1MB FLASH Case: PG-LFBGA-196 |
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XMC4800E196K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-196 Memory: 276kB SRAM; 1.5MB FLASH Number of inputs/outputs: 155 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800E196K2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH Operating temperature: -40...125°C Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Type of integrated circuit: ARM microcontroller Number of inputs/outputs: 155 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Memory: 352kB SRAM; 2MB FLASH Case: PG-LFBGA-196 |
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XMC4800F100F1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 64kB SRAM; 1MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F100F1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 64kB SRAM; 1.5MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F100F2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F100K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH Operating temperature: -40...125°C Family: XMC4800 Supply voltage: 3.3V DC Number of A/D channels: 18 Kind of architecture: Cortex M4 Memory: 128kB SRAM; 1.5MB FLASH Case: PG-LQFP-100 Type of integrated circuit: ARM microcontroller Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Number of inputs/outputs: 75 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog |
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IRL1404STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL1404ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL1404ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK Kind of package: reel Drain-source voltage: 40V Drain current: 120A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 75nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 790A Mounting: SMD Case: D2PAK |
на замовлення 1090 шт: термін постачання 21-30 дні (днів) |
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AUIRL1404ZSTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 790A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhanced |
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IPA65R065C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRF520NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Power dissipation: 48W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhanced |
на замовлення 226 шт: термін постачання 21-30 дні (днів) |
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IRF520NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 47W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.5A Power dissipation: 47W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Gate charge: 47.3nC Kind of package: tube Kind of channel: enhanced |
на замовлення 361 шт: термін постачання 21-30 дні (днів) |
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IGP20N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 42A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
на замовлення 266 шт: термін постачання 21-30 дні (днів) |
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IGP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 21A Power dissipation: 63W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Kind of package: tube Manufacturer series: H5 Turn-on time: 26ns Turn-off time: 169ns |
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IKP20N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 21A Power dissipation: 63W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 48nC Kind of package: tube Turn-on time: 21ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode |
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IKP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 48nC Kind of package: tube Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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SPP20N60CFD | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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SPP20N60S5 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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SPP20N65C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.1A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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IRF3205PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 146nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1310 шт: термін постачання 21-30 дні (днів) |
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IRF3205STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 321 шт: термін постачання 21-30 дні (днів) |
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IRF3205STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRF3205ZLPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Power dissipation: 170W Case: TO262 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IRF3205ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
на замовлення 844 шт: термін постачання 21-30 дні (днів) |
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IRF3205ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Pulsed drain current: 440A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel Kind of channel: enhanced |
на замовлення 329 шт: термін постачання 21-30 дні (днів) |
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AUIRF3205Z | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
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2N7002DWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 2420 шт: термін постачання 21-30 дні (днів) |
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FF600R12ME4EB11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: AG-ECONOD-6 Pulsed collector current: 1.2kA Collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Technology: EconoDUAL™ 3 Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.2kV Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT |
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FF50R12RT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Topology: IGBT half-bridge Mechanical mounting: screw Power dissipation: 285W Application: for UPS; Inverter; motors; photovoltaics Type of module: IGBT Max. off-state voltage: 1.2kV Collector current: 50A Gate-emitter voltage: ±20V Pulsed collector current: 100A Case: AG-34MM-1 Semiconductor structure: transistor/transistor Electrical mounting: screw |
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IRF2804STRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 320A Power dissipation: 330W Case: D2PAK-7 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
AUIRF1010ZSTRL |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BSP452 |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
на замовлення 4068 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 139.56 грн |
5+ | 115.68 грн |
9+ | 100.3 грн |
24+ | 95.18 грн |
500+ | 92.98 грн |
4000+ | 90.79 грн |
IGCM15F60GA |
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
товар відсутній
XMC4700 RELAX KIT |
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
товар відсутній
XMC4800 RELAX ETHERCAT KIT |
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; extension board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; extension board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
товар відсутній
IRFB4110GPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRFB4110PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 283.85 грн |
6+ | 162.54 грн |
15+ | 153.75 грн |
IR2153DPBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 33 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 131.79 грн |
9+ | 101.04 грн |
24+ | 95.91 грн |
IRS2153DPBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Power: 1W
Case: DIP8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 10.1...16.8V DC
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Power: 1W
Case: DIP8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 10.1...16.8V DC
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
на замовлення 62 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 160.06 грн |
7+ | 128.86 грн |
10+ | 125.2 грн |
19+ | 121.54 грн |
50+ | 117.14 грн |
IRS2153DSPBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 10.1...16.8V DC
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 10.1...16.8V DC
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 162.42 грн |
5+ | 133.25 грн |
8+ | 115.68 грн |
IKP10N60TXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 18 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 101.04 грн |
9+ | 97.38 грн |
10+ | 92.98 грн |
IGP30N60H3XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
на замовлення 162 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 249.15 грн |
3+ | 194.02 грн |
7+ | 134.71 грн |
18+ | 127.39 грн |
IRF1404LPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Drain-source voltage: 40V
Drain current: 162A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO262
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Drain-source voltage: 40V
Drain current: 162A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO262
на замовлення 89 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 179.77 грн |
9+ | 96.64 грн |
25+ | 90.79 грн |
IRF1404PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 124 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 99.35 грн |
10+ | 75.41 грн |
12+ | 73.95 грн |
32+ | 70.29 грн |
50+ | 66.62 грн |
IRF1404STRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1404STRRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1404ZPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Kind of package: tube
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Kind of package: tube
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
на замовлення 992 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 81.27 грн |
10+ | 72.48 грн |
14+ | 62.96 грн |
38+ | 59.3 грн |
IRF1404ZSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1404 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 202A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 202A
Power dissipation: 333W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 202A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 202A
Power dissipation: 333W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
AUIRF1404S |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
AUIRF1404STRL |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1404ZSTRL |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
TLE4905LHALA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; P-SSO-3-2; 5÷18mT; Usup: 3.8÷24VDC; THT
Supply voltage: 3.8...24V DC
Mounting: THT
Case: P-SSO-3-2
Operating temperature: -40...150°C
Kind of sensor: unipolar
Type of sensor: Hall
Range of detectable magnetic field: 5...18mT
Category: Hall Sensors
Description: Sensor: Hall; unipolar; P-SSO-3-2; 5÷18mT; Usup: 3.8÷24VDC; THT
Supply voltage: 3.8...24V DC
Mounting: THT
Case: P-SSO-3-2
Operating temperature: -40...150°C
Kind of sensor: unipolar
Type of sensor: Hall
Range of detectable magnetic field: 5...18mT
на замовлення 101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 107.23 грн |
6+ | 88.59 грн |
12+ | 76.14 грн |
31+ | 71.75 грн |
TLE4945L |
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Mounting: THT
Case: P-SSO-3-2
Operating temperature: -40...150°C
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Kind of sensor: bipolar
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Mounting: THT
Case: P-SSO-3-2
Operating temperature: -40...150°C
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Kind of sensor: bipolar
Type of sensor: Hall
на замовлення 125 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.95 грн |
16+ | 55.64 грн |
43+ | 51.98 грн |
XMC4800E196F1024AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196F1536AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800E196F2048AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K1024AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K1536AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800E196K2048AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800F100F1024AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100F1536AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100F2048AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100K1536AAXQMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 18
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-100
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 18
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-100
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
товар відсутній
IRL1404STRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL1404ZPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL1404ZSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Kind of package: reel
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Mounting: SMD
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Kind of package: reel
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Mounting: SMD
Case: D2PAK
на замовлення 1090 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 134.04 грн |
5+ | 112.02 грн |
10+ | 86.39 грн |
28+ | 81.27 грн |
AUIRL1404ZSTRL |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
IPA65R065C7XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRF520NPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 226 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 89.88 грн |
8+ | 49.57 грн |
10+ | 41 грн |
24+ | 36.46 грн |
50+ | 35.07 грн |
65+ | 34.48 грн |
IRF520NSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 47W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 47W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 47W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 47W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF540NPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 361 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 55.19 грн |
10+ | 37.56 грн |
12+ | 32.14 грн |
29+ | 29.72 грн |
79+ | 28.11 грн |
250+ | 27.82 грн |
IGP20N65F5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 42A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 42A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
на замовлення 266 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 142.71 грн |
4+ | 117.88 грн |
9+ | 105.43 грн |
23+ | 99.57 грн |
25+ | 98.11 грн |
IGP20N65H5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
товар відсутній
IKP20N65F5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKP20N65H5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 158.14 грн |
7+ | 137.64 грн |
SPP20N60CFD |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SPP20N60S5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 78 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 524.33 грн |
3+ | 339.71 грн |
7+ | 320.68 грн |
SPP20N65C3 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 421.83 грн |
3+ | 290.66 грн |
9+ | 274.55 грн |
IRF3205PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1310 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 96.98 грн |
10+ | 76.88 грн |
18+ | 49.05 грн |
49+ | 46.12 грн |
IRF3205STRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 321 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 63.08 грн |
10+ | 52.71 грн |
19+ | 45.39 грн |
52+ | 43.2 грн |
250+ | 41.73 грн |
IRF3205STRRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF3205ZLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 105.65 грн |
5+ | 88.59 грн |
IRF3205ZPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 844 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 104.08 грн |
10+ | 79.07 грн |
16+ | 54.91 грн |
43+ | 51.98 грн |
IRF3205ZSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 329 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 110.38 грн |
10+ | 84.2 грн |
17+ | 50.52 грн |
47+ | 47.59 грн |
AUIRF3205Z |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
2N7002DWH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 11.04 грн |
41+ | 9.08 грн |
62+ | 5.97 грн |
100+ | 5.26 грн |
262+ | 3.26 грн |
721+ | 3.08 грн |
FF600R12ME4EB11BOSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: AG-ECONOD-6
Pulsed collector current: 1.2kA
Collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Technology: EconoDUAL™ 3
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: AG-ECONOD-6
Pulsed collector current: 1.2kA
Collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Technology: EconoDUAL™ 3
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
FF50R12RT4HOSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Topology: IGBT half-bridge
Mechanical mounting: screw
Power dissipation: 285W
Application: for UPS; Inverter; motors; photovoltaics
Type of module: IGBT
Max. off-state voltage: 1.2kV
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Case: AG-34MM-1
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Topology: IGBT half-bridge
Mechanical mounting: screw
Power dissipation: 285W
Application: for UPS; Inverter; motors; photovoltaics
Type of module: IGBT
Max. off-state voltage: 1.2kV
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Case: AG-34MM-1
Semiconductor structure: transistor/transistor
Electrical mounting: screw
товар відсутній
IRF2804STRL7PP |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній