Технічний опис IPD640N06LGBTMA1 Infineon Technologies
Description: MOSFET N-CH 60V 18A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2V @ 16µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V.
Інші пропозиції IPD640N06LGBTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IPD640N06LGBTMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 72A Power dissipation: 47W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD640N06LGBTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 18A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V |
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IPD640N06LGBTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 18A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V |
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| IPD640N06LGBTMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 72A Power dissipation: 47W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |