Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137768) > Сторінка 1190 з 2297
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AUIRFR5305 | INFINEON TECHNOLOGIES |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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AUIRFR5305TR | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 2000 шт |
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| AUIRFR5305TRL | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -22A Pulsed drain current: -110A Power dissipation: 110W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 3000 шт |
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AUIRFR6215 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK Case: DPAK Mounting: SMD On-state resistance: 0.295Ω Type of transistor: P-MOSFET Power dissipation: 110W Polarisation: unipolar Gate charge: 66nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -150V Drain current: -13A кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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| AUIRFR8405TRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 804A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.98mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| AUIRFR9024NTRL | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -8A Pulsed drain current: -44A Power dissipation: 38W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Gate charge: 19nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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AUIRFS3107-7P | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 190A Power dissipation: 370W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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AUIRFSL8403 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 87A Power dissipation: 99W Case: TO262 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 62nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AUIRFSL8407 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 50 шт |
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AUIRFZ24NS | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 12A; 45W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 12A Power dissipation: 45W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AUIRFZ44VZS | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 57A Power dissipation: 92W Case: D2PAK Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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AUIRG4PH50S | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 81A Pulsed collector current: 99A Type of transistor: IGBT Power dissipation: 217W Kind of package: tube Gate charge: 227nC Mounting: THT Case: TO247-3 кількість в упаковці: 75 шт |
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AUIRGP35B60PD | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 34A Power dissipation: 123W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 240nC Kind of package: tube Turn-on time: 34ns Turn-off time: 142ns кількість в упаковці: 1 шт |
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AUIRGP4062D | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC Case: TO247AC Mounting: THT Kind of package: tube Technology: Trench Collector current: 24A Gate-emitter voltage: ±20V Power dissipation: 125W Gate charge: 75nC Pulsed collector current: 72A Collector-emitter voltage: 600V Turn-on time: 64ns Turn-off time: 164ns Type of transistor: IGBT кількість в упаковці: 400 шт |
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AUIRGP4066D1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 90A Power dissipation: 227W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 115ns Turn-off time: 320ns кількість в упаковці: 1 шт |
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AUIRGPS4070D0 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247 Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 160A Power dissipation: 375W Case: SUPER247 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 165ns Turn-off time: 260ns кількість в упаковці: 1 шт |
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AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262 Case: TO262 Mounting: THT Kind of package: tube Technology: Trench Collector current: 39A Gate-emitter voltage: ±20V Power dissipation: 123W Gate charge: 77nC Pulsed collector current: 72A Collector-emitter voltage: 600V Turn-on time: 35ns Turn-off time: 176ns Type of transistor: IGBT кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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AUIRL1404ZSTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 790A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhanced кількість в упаковці: 800 шт |
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AUIRL7732S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Power dissipation: 41W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 4800 шт |
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AUIRL7736M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 112A Power dissipation: 63W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 4000 шт |
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AUIRL7766M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Power dissipation: 62.5W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 4800 шт |
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| AUIRLR2905ZTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 42A Pulsed drain current: 240A Power dissipation: 110W Case: DPAK Gate-source voltage: ±16V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| AUIRLS3034 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 243A Power dissipation: 375W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 108nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Kind of package: reel; tape Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Capacitance: 0.6...1.4pF Semiconductor structure: single diode Leakage current: 20nA кількість в упаковці: 5 шт |
на замовлення 2470 шт: термін постачання 14-21 дні (днів) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Kind of package: reel; tape Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Capacitance: 0.6...1.4pF Semiconductor structure: single diode Leakage current: 20nA кількість в упаковці: 5 шт |
на замовлення 2470 шт: термін постачання 14-21 дні (днів) |
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BA885E6327 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape Max. off-state voltage: 50V Load current: 50mA Case: SOT23 Kind of package: reel; tape Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Capacitance: 0.19...0.45pF Semiconductor structure: single diode Leakage current: 20nA кількість в упаковці: 1 шт |
на замовлення 1763 шт: термін постачання 14-21 дні (днів) |
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BA89202VH6127XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V Kind of package: reel; tape Case: SC79 Capacitance: 0.6...1.4pF Max. off-state voltage: 35V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Reverse recovery time: 120ns Leakage current: 20nA Type of diode: switching Features of semiconductor devices: PIN; RF Mounting: SMD кількість в упаковці: 5 шт |
на замовлення 5334 шт: термін постачання 14-21 дні (днів) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Mounting: SMD Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Case: SC79 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W кількість в упаковці: 1 шт |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Max. off-state voltage: 50V Load current: 0.1A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 1.2V Features of semiconductor devices: PIN; RF Mounting: SMD Power dissipation: 0.25W Type of diode: switching Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 2685 шт: термін постачання 14-21 дні (днів) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Max. off-state voltage: 150V Load current: 0.1A Case: SC79 Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Mounting: SMD Power dissipation: 0.25W Type of diode: switching Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 2010 шт: термін постачання 14-21 дні (днів) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Kind of package: reel; tape Power dissipation: 0.25W Semiconductor structure: common cathode; double Type of diode: switching Load current: 0.1A Max. forward voltage: 1.1V Max. off-state voltage: 150V Case: SOT323 Features of semiconductor devices: PIN; RF Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 1555 шт: термін постачання 14-21 дні (днів) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Max. off-state voltage: 150V Load current: 0.1A Case: SC79 Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Mounting: SMD Power dissipation: 0.25W Type of diode: switching Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 2010 шт: термін постачання 14-21 дні (днів) |
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Max. off-state voltage: 50V Load current: 0.1A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 1.2V Features of semiconductor devices: PIN; RF Mounting: SMD Power dissipation: 0.25W Type of diode: switching Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 1984 шт: термін постачання 14-21 дні (днів) |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Max. off-state voltage: 150V Load current: 0.1A Case: SOT23 Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Mounting: SMD Power dissipation: 0.25W Type of diode: switching Semiconductor structure: double series кількість в упаковці: 1 шт |
на замовлення 2350 шт: термін постачання 14-21 дні (днів) |
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| BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: varicap Features of semiconductor devices: PIN; RF Case: SC79 Capacitance: 0.5pF Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Leakage current: 20nA кількість в упаковці: 1 шт |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Max. off-state voltage: 150V Load current: 0.2A Max. forward impulse current: 12A Case: SOT23 Kind of package: reel; tape Max. forward voltage: 1.2V Features of semiconductor devices: PIN Mounting: SMD Power dissipation: 0.25W Type of diode: switching Semiconductor structure: double series кількість в упаковці: 5 шт |
на замовлення 2740 шт: термін постачання 14-21 дні (днів) |
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BAR81WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns Kind of package: reel; tape Reverse recovery time: 80ns Power dissipation: 0.1W Semiconductor structure: single diode Type of diode: switching Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V Case: SOT343 Features of semiconductor devices: RF Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 960 шт: термін постачання 14-21 дні (днів) |
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BAS116E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Load current: 0.25A Max. forward voltage: 1.25V Power dissipation: 0.37W Reverse recovery time: 0.6µs Type of diode: switching Features of semiconductor devices: fast switching Max. off-state voltage: 85V Max. forward impulse current: 4.5A кількість в упаковці: 1 шт |
на замовлення 2474 шт: термін постачання 14-21 дні (днів) |
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BAS116E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 0.6µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape кількість в упаковці: 25 шт |
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BAS12504WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double series Case: SOT323 Max. forward impulse current: 0.5A Power dissipation: 0.25W кількість в упаковці: 1 шт |
на замовлення 2982 шт: термін постачання 14-21 дні (днів) |
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BAS12507WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW Mounting: SMD Case: SOT343 Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double independent Max. forward impulse current: 0.5A Power dissipation: 0.25W Type of diode: Schottky switching кількість в упаковці: 1 шт |
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BAS140WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOD323; 250mW Mounting: SMD Power dissipation: 0.25W Type of diode: Schottky switching Case: SOD323 Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Max. forward impulse current: 0.2A кількість в упаковці: 1 шт |
на замовлення 2975 шт: термін постачання 14-21 дні (днів) |
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BAS1602VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SC79 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.25W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3842 шт: термін постачання 14-21 дні (днів) |
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BAS1603WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3374 шт: термін постачання 14-21 дні (днів) |
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BAS16E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 17027 шт: термін постачання 14-21 дні (днів) |
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BAS16UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: ultrafast switching Case: SC74 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4780 шт: термін постачання 14-21 дні (днів) |
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BAS170WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOD323; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Case: SOD323 Max. forward impulse current: 0.1A Power dissipation: 0.25W кількість в упаковці: 5 шт |
на замовлення 1319 шт: термін постачання 14-21 дні (днів) |
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BAS2103WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD323 Power dissipation: 0.25W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 60 шт: термін постачання 14-21 дні (днів) |
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BAS21E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOT23 Power dissipation: 0.35W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3136 шт: термін постачання 14-21 дні (днів) |
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BAS28E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape Case: SOT143 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double independent Load current: 0.2A Power dissipation: 0.33W Type of diode: switching Features of semiconductor devices: ultrafast switching Max. off-state voltage: 85V кількість в упаковці: 1 шт |
на замовлення 2275 шт: термін постачання 14-21 дні (днів) |
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BAS28WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape Kind of package: reel; tape Power dissipation: 0.25W Semiconductor structure: double independent Type of diode: switching Load current: 0.2A Max. off-state voltage: 85V Case: SOT343 Features of semiconductor devices: ultrafast switching Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 425 шт: термін постачання 14-21 дні (днів) |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79 Mounting: SMD Case: SC79 Max. off-state voltage: 30V Type of diode: Schottky rectifying Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A кількість в упаковці: 1 шт |
на замовлення 2771 шт: термін постачання 14-21 дні (днів) |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Max. off-state voltage: 30V Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: Schottky Type of bridge rectifier: single-phase Load current: 0.9A Max. forward impulse current: 5A кількість в упаковці: 1 шт |
на замовлення 3177 шт: термін постачання 14-21 дні (днів) |
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BAS3010A03WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323 Mounting: SMD Case: SOD323 Max. off-state voltage: 30V Type of diode: Schottky rectifying Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A кількість в упаковці: 1 шт |
на замовлення 3558 шт: термін постачання 14-21 дні (днів) |
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BAS4002ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT Max. off-state voltage: 40V Load current: 0.2A Case: SOT143 Features of semiconductor devices: Schottky Max. forward impulse current: 2A Kind of package: reel; tape Electrical mounting: SMT Type of bridge rectifier: single-phase кількість в упаковці: 1 шт |
на замовлення 1931 шт: термін постачання 14-21 дні (днів) |
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BAS4004E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double series Case: SOT23 Max. forward impulse current: 0.2A Power dissipation: 0.25W кількість в упаковці: 1 шт |
на замовлення 3490 шт: термін постачання 14-21 дні (днів) |
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BAS4005E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common cathode; double Case: SOT23 Max. forward impulse current: 0.2A Power dissipation: 0.25W кількість в упаковці: 1 шт |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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BAS4005WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT323; 250mW Mounting: SMD Case: SOT323 Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common cathode; double Max. forward impulse current: 0.2A Power dissipation: 0.25W Type of diode: Schottky switching кількість в упаковці: 3000 шт |
товар відсутній |
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BAS4006E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW Mounting: SMD Case: SOT23 Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common anode; double Max. forward impulse current: 0.2A Power dissipation: 0.25W Type of diode: Schottky switching кількість в упаковці: 1 шт |
товар відсутній |
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BAS4006WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT323; 250mW Mounting: SMD Case: SOT323 Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common anode; double Max. forward impulse current: 0.2A Power dissipation: 0.25W Type of diode: Schottky switching кількість в упаковці: 3000 шт |
товар відсутній |
| AUIRFR5305 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.51 грн |
| 5+ | 190.68 грн |
| 8+ | 145.84 грн |
| 20+ | 137.94 грн |
| AUIRFR5305TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
| AUIRFR5305TRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| AUIRFR6215 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Mounting: SMD
On-state resistance: 0.295Ω
Type of transistor: P-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Gate charge: 66nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -150V
Drain current: -13A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Mounting: SMD
On-state resistance: 0.295Ω
Type of transistor: P-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Gate charge: 66nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -150V
Drain current: -13A
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.24 грн |
| 5+ | 190.68 грн |
| 7+ | 152.87 грн |
| 19+ | 144.96 грн |
| AUIRFR8405TRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| AUIRFR9024NTRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| AUIRFS3107-7P |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 190A
Power dissipation: 370W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 190A
Power dissipation: 370W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AUIRFSL8403 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AUIRFSL8407 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 50 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 50 шт
товар відсутній
| AUIRFZ24NS |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 12A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 12A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 12A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 12A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AUIRFZ44VZS |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AUIRG4PH50S |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 81A
Pulsed collector current: 99A
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Gate charge: 227nC
Mounting: THT
Case: TO247-3
кількість в упаковці: 75 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 81A
Pulsed collector current: 99A
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Gate charge: 227nC
Mounting: THT
Case: TO247-3
кількість в упаковці: 75 шт
товар відсутній
| AUIRGP35B60PD |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
товар відсутній
| AUIRGP4062D |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Case: TO247AC
Mounting: THT
Kind of package: tube
Technology: Trench
Collector current: 24A
Gate-emitter voltage: ±20V
Power dissipation: 125W
Gate charge: 75nC
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Turn-on time: 64ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 400 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Case: TO247AC
Mounting: THT
Kind of package: tube
Technology: Trench
Collector current: 24A
Gate-emitter voltage: ±20V
Power dissipation: 125W
Gate charge: 75nC
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Turn-on time: 64ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 400 шт
товар відсутній
| AUIRGP4066D1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
| AUIRGPS4070D0 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 160A
Power dissipation: 375W
Case: SUPER247
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 165ns
Turn-off time: 260ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 160A
Power dissipation: 375W
Case: SUPER247
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 165ns
Turn-off time: 260ns
кількість в упаковці: 1 шт
товар відсутній
| AUIRGSL4062D1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 123W
Gate charge: 77nC
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Turn-on time: 35ns
Turn-off time: 176ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 123W
Gate charge: 77nC
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Turn-on time: 35ns
Turn-off time: 176ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.82 грн |
| 3+ | 351.26 грн |
| 4+ | 323.31 грн |
| 9+ | 305.74 грн |
| 50+ | 294.32 грн |
| AUIRL1404ZSTRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| AUIRL7732S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4800 шт
товар відсутній
| AUIRL7736M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4000 шт
товар відсутній
| AUIRL7766M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4800 шт
товар відсутній
| AUIRLR2905ZTRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| AUIRLS3034 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BA592E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 5 шт
на замовлення 2470 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.19 грн |
| 25+ | 12.23 грн |
| 100+ | 10.37 грн |
| 115+ | 9.05 грн |
| 310+ | 8.61 грн |
| 3000+ | 8.43 грн |
| BA592E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 5 шт
на замовлення 2470 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.19 грн |
| 25+ | 12.23 грн |
| 100+ | 10.37 грн |
| 115+ | 9.05 грн |
| 310+ | 8.61 грн |
| 3000+ | 8.43 грн |
| BA885E6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 1 шт
на замовлення 1763 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 17.98 грн |
| 37+ | 7.48 грн |
| 100+ | 6.41 грн |
| 500+ | 6.24 грн |
| BA89202VH6127XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Kind of package: reel; tape
Case: SC79
Capacitance: 0.6...1.4pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Kind of package: reel; tape
Case: SC79
Capacitance: 0.6...1.4pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 5334 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.49 грн |
| 55+ | 5.44 грн |
| 100+ | 4.61 грн |
| 255+ | 4.01 грн |
| 700+ | 3.79 грн |
| BAR6302VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
кількість в упаковці: 1 шт
товар відсутній
| BAR6303WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 2685 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 22.71 грн |
| 19+ | 14.69 грн |
| 25+ | 10.68 грн |
| 100+ | 6.92 грн |
| 192+ | 5.32 грн |
| 500+ | 4.83 грн |
| BAR6402VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 2010 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.49 грн |
| 17+ | 16.6 грн |
| 25+ | 12.12 грн |
| 100+ | 7.91 грн |
| 148+ | 6.85 грн |
| 407+ | 6.5 грн |
| BAR6405WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Type of diode: switching
Load current: 0.1A
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Case: SOT323
Features of semiconductor devices: PIN; RF
Mounting: SMD
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Type of diode: switching
Load current: 0.1A
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Case: SOT323
Features of semiconductor devices: PIN; RF
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 1555 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.33 грн |
| 14+ | 20.25 грн |
| 100+ | 13.35 грн |
| 106+ | 9.66 грн |
| 289+ | 9.14 грн |
| 1000+ | 8.87 грн |
| 3000+ | 8.79 грн |
| BAR6402VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 2010 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.49 грн |
| 17+ | 16.6 грн |
| 25+ | 12.12 грн |
| 100+ | 7.91 грн |
| 148+ | 6.85 грн |
| 407+ | 6.5 грн |
| BAR6403WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 1984 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.49 грн |
| 18+ | 15.33 грн |
| 100+ | 8.87 грн |
| 141+ | 7.2 грн |
| 389+ | 6.85 грн |
| 500+ | 6.76 грн |
| 1000+ | 6.68 грн |
| BAR6404E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: double series
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: double series
кількість в упаковці: 1 шт
на замовлення 2350 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.44 грн |
| 15+ | 18.43 грн |
| 25+ | 13.64 грн |
| 100+ | 8.76 грн |
| 184+ | 5.56 грн |
| 500+ | 5.55 грн |
| 505+ | 5.25 грн |
| BAR6502VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
кількість в упаковці: 1 шт
товар відсутній
| BAR66E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: double series
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Mounting: SMD
Power dissipation: 0.25W
Type of diode: switching
Semiconductor structure: double series
кількість в упаковці: 5 шт
на замовлення 2740 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.9 грн |
| 25+ | 14.42 грн |
| 100+ | 10.63 грн |
| 265+ | 10.02 грн |
| BAR81WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Reverse recovery time: 80ns
Power dissipation: 0.1W
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Case: SOT343
Features of semiconductor devices: RF
Mounting: SMD
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Reverse recovery time: 80ns
Power dissipation: 0.1W
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Case: SOT343
Features of semiconductor devices: RF
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 960 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.81 грн |
| 7+ | 41.06 грн |
| 25+ | 34.97 грн |
| 34+ | 30.31 грн |
| 93+ | 28.64 грн |
| BAS116E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.37W
Reverse recovery time: 0.6µs
Type of diode: switching
Features of semiconductor devices: fast switching
Max. off-state voltage: 85V
Max. forward impulse current: 4.5A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.37W
Reverse recovery time: 0.6µs
Type of diode: switching
Features of semiconductor devices: fast switching
Max. off-state voltage: 85V
Max. forward impulse current: 4.5A
кількість в упаковці: 1 шт
на замовлення 2474 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.03 грн |
| 26+ | 10.86 грн |
| 33+ | 8.19 грн |
| 100+ | 5.73 грн |
| 320+ | 3.2 грн |
| 880+ | 3.02 грн |
| 24000+ | 2.91 грн |
| BAS116E6433HTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
кількість в упаковці: 25 шт
товар відсутній
| BAS12504WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
кількість в упаковці: 1 шт
на замовлення 2982 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.98 грн |
| 10+ | 43.88 грн |
| 52+ | 19.59 грн |
| 143+ | 18.45 грн |
| 3000+ | 18.36 грн |
| 6000+ | 17.84 грн |
| BAS12507WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 1 шт
товар відсутній
| BAS140WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOD323; 250mW
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOD323; 250mW
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
кількість в упаковці: 1 шт
на замовлення 2975 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 16.08 грн |
| 22+ | 12.68 грн |
| 100+ | 8.79 грн |
| 186+ | 5.54 грн |
| 510+ | 5.18 грн |
| BAS1602VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3842 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 8.52 грн |
| 41+ | 6.75 грн |
| 46+ | 5.83 грн |
| 100+ | 4.91 грн |
| 250+ | 4.42 грн |
| 294+ | 3.49 грн |
| 807+ | 3.29 грн |
| BAS1603WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3374 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 11.54 грн |
| 55+ | 5.11 грн |
| 100+ | 4.42 грн |
| 285+ | 3.63 грн |
| 780+ | 3.43 грн |
| BAS16E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 17027 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 47+ | 6.09 грн |
| 54+ | 5.11 грн |
| 66+ | 4.04 грн |
| 100+ | 3.63 грн |
| 250+ | 3.36 грн |
| 350+ | 2.93 грн |
| 961+ | 2.77 грн |
| BAS16UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: ultrafast switching
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: ultrafast switching
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4780 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.25 грн |
| 23+ | 12.04 грн |
| 25+ | 10.72 грн |
| 100+ | 10.19 грн |
| 112+ | 9.14 грн |
| 308+ | 8.7 грн |
| 500+ | 8.52 грн |
| BAS170WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOD323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOD323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
кількість в упаковці: 5 шт
на замовлення 1319 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.11 грн |
| 40+ | 7.76 грн |
| 100+ | 6.5 грн |
| 180+ | 5.62 грн |
| 495+ | 5.27 грн |
| BAS2103WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Power dissipation: 0.25W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 17.98 грн |
| 21+ | 13.05 грн |
| 27+ | 10.12 грн |
| 100+ | 6.91 грн |
| 248+ | 4.14 грн |
| 681+ | 3.91 грн |
| 30000+ | 3.78 грн |
| BAS21E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Power dissipation: 0.35W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Power dissipation: 0.35W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3136 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 21.76 грн |
| 23+ | 11.95 грн |
| 100+ | 6.23 грн |
| 315+ | 3.25 грн |
| 865+ | 3.08 грн |
| 24000+ | 2.98 грн |
| 75000+ | 2.95 грн |
| BAS28E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double independent
Load current: 0.2A
Power dissipation: 0.33W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double independent
Load current: 0.2A
Power dissipation: 0.33W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
кількість в упаковці: 1 шт
на замовлення 2275 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.6 грн |
| 16+ | 17.24 грн |
| 100+ | 10.63 грн |
| 154+ | 6.68 грн |
| 424+ | 6.33 грн |
| 9000+ | 6.24 грн |
| 30000+ | 6.06 грн |
| BAS28WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: double independent
Type of diode: switching
Load current: 0.2A
Max. off-state voltage: 85V
Case: SOT343
Features of semiconductor devices: ultrafast switching
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Semiconductor structure: double independent
Type of diode: switching
Load current: 0.2A
Max. off-state voltage: 85V
Case: SOT343
Features of semiconductor devices: ultrafast switching
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 425 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 8.59 грн |
| 100+ | 7.45 грн |
| 183+ | 5.56 грн |
| 503+ | 5.25 грн |
| 3000+ | 5.12 грн |
| BAS3005B02VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79
Mounting: SMD
Case: SC79
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79
Mounting: SMD
Case: SC79
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
кількість в упаковці: 1 шт
на замовлення 2771 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 20.82 грн |
| 18+ | 15.51 грн |
| 100+ | 9.93 грн |
| 132+ | 7.73 грн |
| 363+ | 7.29 грн |
| 1000+ | 7.03 грн |
| BAS3007ARPPE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 30V
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Load current: 0.9A
Max. forward impulse current: 5A
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 30V
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Load current: 0.9A
Max. forward impulse current: 5A
кількість в упаковці: 1 шт
на замовлення 3177 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.06 грн |
| 56+ | 19.07 грн |
| 153+ | 17.4 грн |
| 3000+ | 16.69 грн |
| BAS3010A03WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
кількість в упаковці: 1 шт
на замовлення 3558 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.06 грн |
| 14+ | 20.98 грн |
| 16+ | 16.87 грн |
| 25+ | 12.65 грн |
| 100+ | 11.6 грн |
| 120+ | 8.52 грн |
| 330+ | 8.08 грн |
| BAS4002ARPPE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Max. off-state voltage: 40V
Load current: 0.2A
Case: SOT143
Features of semiconductor devices: Schottky
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Max. off-state voltage: 40V
Load current: 0.2A
Case: SOT143
Features of semiconductor devices: Schottky
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
кількість в упаковці: 1 шт
на замовлення 1931 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 28.86 грн |
| 55+ | 19.34 грн |
| 151+ | 17.57 грн |
| 3000+ | 17.22 грн |
| BAS4004E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
кількість в упаковці: 1 шт
на замовлення 3490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 16.08 грн |
| 25+ | 11.31 грн |
| 100+ | 7.97 грн |
| 247+ | 4.15 грн |
| 679+ | 3.92 грн |
| BAS4005E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 16.08 грн |
| 24+ | 11.68 грн |
| 100+ | 8.01 грн |
| 248+ | 4.14 грн |
| 681+ | 3.91 грн |
| BAS4005WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 3000 шт
товар відсутній
| BAS4006E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Mounting: SMD
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Mounting: SMD
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 1 шт
товар відсутній
| BAS4006WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
кількість в упаковці: 3000 шт
товар відсутній