SSM6N35FE,LM(T TOSHIBA
Виробник: TOSHIBACategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SSM6N35FE,LM(T TOSHIBA
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.18A, Power dissipation: 0.15W, Case: SOT563, Gate-source voltage: ±10V, On-state resistance: 20Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 5 шт.
Інші пропозиції SSM6N35FE,LM(T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
SSM6N35FE,LM(T | Виробник : TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |