T2N7002AK,LM(T TOSHIBA
Виробник: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.35nC
Kind of channel: enhanced
Pulsed drain current: 0.76A
Gate-source voltage: ±20V
кількість в упаковці: 30000 шт
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Технічний опис T2N7002AK,LM(T TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23, Mounting: SMD, Case: SOT23, Kind of package: reel; tape, Drain-source voltage: 60V, Drain current: 0.2A, On-state resistance: 3.2Ω, Type of transistor: N-MOSFET, Power dissipation: 0.32W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 0.35nC, Kind of channel: enhanced, Pulsed drain current: 0.76A, Gate-source voltage: ±20V, кількість в упаковці: 30000 шт.
Інші пропозиції T2N7002AK,LM(T
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T2N7002AK,LM(T | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 3.2Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.35nC Kind of channel: enhanced Pulsed drain current: 0.76A Gate-source voltage: ±20V |
товар відсутній |