Технічний опис SSM3K72CFS,LF(T Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75, Mounting: SMD, Case: SC75, Kind of package: reel; tape, Drain-source voltage: 60V, Drain current: 0.17A, On-state resistance: 4.7Ω, Type of transistor: N-MOSFET, Power dissipation: 0.15W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 0.27nC, Kind of channel: enhanced, Gate-source voltage: ±20V, кількість в упаковці: 5 шт.
Інші пропозиції SSM3K72CFS,LF(T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SSM3K72CFS,LF(T | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.17A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.27nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
товар відсутній |
||
SSM3K72CFS,LF(T | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.17A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.27nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |