Технічний опис SSM3J355R,LF(T Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F, Mounting: SMD, Case: SOT23F, Kind of package: reel; tape, Drain-source voltage: -20V, Drain current: -6A, On-state resistance: 52.3mΩ, Type of transistor: P-MOSFET, Power dissipation: 2W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Pulsed drain current: 24A, Gate-source voltage: ±10V, кількість в упаковці: 5 шт.
Інші пропозиції SSM3J355R,LF(T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SSM3J355R,LF(T | Виробник : Toshiba |
 Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
товар відсутній |
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| SSM3J355R,LF(T | Виробник : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 52.3mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±10V кількість в упаковці: 5 шт |
товар відсутній |
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| SSM3J355R,LF(T | Виробник : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 52.3mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±10V |
товар відсутній |