Технічний опис SSM3K35MFV,L3F(T Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723, Mounting: SMD, Case: SOT723, Kind of package: reel; tape, Drain-source voltage: 20V, Drain current: 0.18A, On-state resistance: 20Ω, Type of transistor: N-MOSFET, Power dissipation: 0.15W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±10V, кількість в упаковці: 40000 шт.
Інші пропозиції SSM3K35MFV,L3F(T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SSM3K35MFV,L3F(T | Виробник : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 40000 шт |
товар відсутній |
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+1 |
SSM3K35MFV,L3F(T | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |