Технічний опис SSM3J327R,LF(B Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.9A, Power dissipation: 1W, Case: SOT23F, Gate-source voltage: ±8V, On-state resistance: 0.24Ω, Mounting: SMD, Gate charge: 4.6nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 5 шт.
Інші пропозиції SSM3J327R,LF(B
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SSM3J327R,LF(B | Виробник : TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
товар відсутній |
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![]() +1 |
SSM3J327R,LF(B | Виробник : TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |