![RCX081N20 RCX081N20](https://www.mouser.com/images/mouserelectronics/lrg/TO_220_FullPack_3_t.jpg)
на замовлення 903 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 81.59 грн |
10+ | 66.04 грн |
100+ | 44.63 грн |
500+ | 29.1 грн |
1000+ | 28.96 грн |
5000+ | 27.55 грн |
10000+ | 27.34 грн |
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Технічний опис RCX081N20 ROHM Semiconductor
Description: MOSFET N-CH 200V 8A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V, Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5.25V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.
Інші пропозиції RCX081N20
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RCX081N20 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 8A Pulsed drain current: 32A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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RCX081N20 | Виробник : Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
товар відсутній |
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RCX081N20 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 8A Pulsed drain current: 32A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |