RD3G500GNTL ROHM Semiconductor
Виробник: ROHM SemiconductorMOSFETs RD3G500GN is the low on - resistance MOSFET for switching application.
на замовлення 1824 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.51 грн |
| 10+ | 97.34 грн |
| 100+ | 67.58 грн |
| 500+ | 56.78 грн |
| 1000+ | 48.25 грн |
| 2500+ | 45.78 грн |
| 5000+ | 44.37 грн |
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Технічний опис RD3G500GNTL ROHM Semiconductor
Description: MOSFET N-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V.
Інші пропозиції RD3G500GNTL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| RD3G500GNTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 50A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: DPAK; TO252 кількість в упаковці: 2500 шт |
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RD3G500GNTL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 40V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V |
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RD3G500GNTL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V |
товар відсутній |
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| RD3G500GNTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 50A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: DPAK; TO252 |
товар відсутній |