на замовлення 14 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 108.26 грн |
| 10+ | 87.69 грн |
| 100+ | 59.7 грн |
| 500+ | 50.57 грн |
| 1000+ | 41.22 грн |
| 2500+ | 38.77 грн |
| 5000+ | 36.9 грн |
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Технічний опис RD3T075CNTL1 ROHM Semiconductor
Description: MOSFET N-CH 200V 7.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 5.25V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V.
Інші пропозиції RD3T075CNTL1 за ціною від 39.96 грн до 140.84 грн
| Фото | Назва | Виробник | Інформація |
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RD3T075CNTL1 | Виробник : Rohm Semiconductor |
 Description: MOSFET N-CH 200V 7.5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V |
на замовлення 1452 шт: термін постачання 21-31 дні (днів) |
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| RD3T075CNTL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 30A; 52W; SOT416F Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Gate-source voltage: ±30V Pulsed drain current: 30A Kind of channel: enhanced Mounting: SMD Case: SOT416F Drain-source voltage: 200V Drain current: 7.5A On-state resistance: 0.325Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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RD3T075CNTL1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 200V 7.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V |
товар відсутній |
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| RD3T075CNTL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 30A; 52W; SOT416F Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Gate-source voltage: ±30V Pulsed drain current: 30A Kind of channel: enhanced Mounting: SMD Case: SOT416F Drain-source voltage: 200V Drain current: 7.5A On-state resistance: 0.325Ω Type of transistor: N-MOSFET |
товар відсутній |