RD3L080SNTL1 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 60V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 31.18 грн |
| 5000+ | 28.6 грн |
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Технічний опис RD3L080SNTL1 Rohm Semiconductor
Description: MOSFET N-CH 60V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V.
Інші пропозиції RD3L080SNTL1 за ціною від 29.93 грн до 75.27 грн
| Фото | Назва | Виробник | Інформація |
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RD3L080SNTL1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 60V 8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V |
на замовлення 8889 шт: термін постачання 21-31 дні (днів) |
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RD3L080SNTL1 | Виробник : ROHM Semiconductor |
MOSFET Nch 60V 8A TO-252 (DPAK) |
на замовлення 2360 шт: термін постачання 21-30 дні (днів) |
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| RD3L080SNTL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252 Mounting: SMD Case: DPAK; TO252 Power dissipation: 15W Kind of package: reel; tape Gate charge: 9.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 16A Drain-source voltage: 60V Drain current: 8A On-state resistance: 109mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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| RD3L080SNTL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252 Mounting: SMD Case: DPAK; TO252 Power dissipation: 15W Kind of package: reel; tape Gate charge: 9.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 16A Drain-source voltage: 60V Drain current: 8A On-state resistance: 109mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
товар відсутній |