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IXYA12N250CHVIXYSDescription: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYA12N250CHVLittelfuseIGBT Transistors IGBT XPT
товар відсутній
IXYA15N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-263D2
товар відсутній
IXYA15N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
3+160.76 грн
7+ 127.55 грн
20+ 120 грн
Мінімальне замовлення: 3
IXYA15N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
на замовлення 250 шт:
термін постачання 14-21 дні (днів)
2+230.18 грн
3+ 200.33 грн
7+ 153.06 грн
20+ 144 грн
Мінімальне замовлення: 2
IXYA15N65C3D1IXYSDescription: IGBT PT 650V 38A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYA20N120A4HVIXYSDescription: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
300+239.53 грн
Мінімальне замовлення: 300
IXYA20N120A4HVIXYSIGBTs TO263 1200V 20A XPT
на замовлення 3126 шт:
термін постачання 21-30 дні (днів)
1+491.11 грн
10+ 414.94 грн
50+ 289.81 грн
500+ 284.74 грн
1000+ 278.95 грн
2500+ 273.15 грн
IXYA20N120A4HVLittelfuse1200V IGBT Chip Transistor
товар відсутній
IXYA20N120A4HV-TRLLittelfuseIGBT Transistors
товар відсутній
IXYA20N120B4HVIXYSDescription: IGBT 1200V 20A GENX4 XPT TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
1+786.88 грн
50+ 613.53 грн
100+ 577.45 грн
IXYA20N120B4HVLittelfuse1200V XPT GenX4 IGBT
товар відсутній
IXYA20N120B4HVIXYSIGBTs TO263 1200V 20A XPT
на замовлення 1244 шт:
термін постачання 21-30 дні (днів)
1+879.1 грн
10+ 763.22 грн
25+ 646.28 грн
50+ 610.06 грн
100+ 573.11 грн
500+ 478.92 грн
1000+ 467.32 грн
IXYA20N120B4HV-TRLLittelfuse Disc. IGBT XPT-GenX4 TO-263HV
товар відсутній
IXYA20N120C3HVIXYSIGBTs TO263 1200V 20A XPT
товар відсутній
IXYA20N120C3HVLittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW
товар відсутній
IXYA20N120C3HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N120C3HVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYA20N120C3HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній
IXYA20N120C3HV-TRLIXYSDescription: IXYA20N120C3HV TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYA20N120C3HV-TRLIXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYA20N120C3HV-TRLLittelfuseIXYA20N120C3HV TRL
товар відсутній
IXYA20N120C4HVIXYSIGBTs TO263 1200V 20A XPT
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
1+622.13 грн
10+ 525.76 грн
50+ 414.43 грн
100+ 380.38 грн
250+ 357.92 грн
500+ 335.46 грн
1000+ 302.13 грн
IXYA20N120C4HVLittelfuse1200V IGBT Chip Transistor
товар відсутній
IXYA20N120C4HVIXYSDescription: IGBT 1200V 20A X4 HSPEED TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
на замовлення 1049 шт:
термін постачання 21-31 дні (днів)
1+391.09 грн
50+ 301.06 грн
100+ 278.96 грн
IXYA20N120C4HV-TRLIXYSDescription: DISC. IGBT XPT-GENX4 TO-263HV
Packaging: Tape & Reel (TR)
товар відсутній
IXYA20N120C4HV-TRLLittelfuse Disc. IGBT XPT-GenX4 TO-263HV
товар відсутній
IXYA20N120C4HV-TRLLittelfuseDisc. IGBT XPT-GenX4 TO-263HV
товар відсутній
IXYA20N65B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 700µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
IXYA20N65B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
товар відсутній
IXYA20N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYA20N65C3IXYSIGBTs TO263 650V 20A XPT
товар відсутній
IXYA20N65C3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYA20N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3-TRLIXYSIGBTs IXYA20N65C3 TRL
товар відсутній
IXYA20N65C3-TRLIXYSDescription: IXYA20N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYA20N65C3-TRLLittelfuseTrans IGBT Chip N-CH 650V 50A 230W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXYA20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXYA20N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 176 шт:
термін постачання 14-21 дні (днів)
1+328.69 грн
3+ 284.97 грн
5+ 218.27 грн
14+ 206.49 грн
IXYA20N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-263D2
товар відсутній
IXYA20N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
2+273.91 грн
3+ 228.68 грн
5+ 181.89 грн
14+ 172.08 грн
Мінімальне замовлення: 2
IXYA20N65C3D1IXYSDescription: IGBT 650V 50A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+329.96 грн
50+ 251.87 грн
100+ 215.88 грн
IXYA20N65C3D1TRLLittelfuseIXYA20N65C3D1TRL
товар відсутній
IXYA30N120A3HVIXYSIGBTs TO263 1200V 30A IGBT
товар відсутній
IXYA30N120A3HVIXYSDescription: IGBT DISCRETE TO-263HV
Packaging: Tube
Part Status: Active
товар відсутній
IXYA30N120A4HVIXYSDescription: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
300+399.54 грн
Мінімальне замовлення: 300
IXYA30N120A4HVLittelfuse1200V IGBT Chip Transistor
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
300+351.64 грн
Мінімальне замовлення: 300
IXYA30N120A4HVIXYSIGBTs TO263 1200V 30A XPT
на замовлення 555 шт:
термін постачання 21-30 дні (днів)
1+664.4 грн
10+ 576.58 грн
50+ 421.68 грн
100+ 418.78 грн
1000+ 381.83 грн
IXYA30N120A4HVLittelfuse1200V IGBT Chip Transistor
товар відсутній
IXYA30N120A4HV-TRLLittelfuse IXYA30N120A4HV-TRL
товар відсутній
IXYA48N65A5IXYSIGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-263
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+376.15 грн
10+ 311.62 грн
50+ 255.76 грн
100+ 218.81 грн
250+ 207.22 грн
500+ 194.9 грн
1000+ 167.37 грн
IXYA48N65A5IXYSDescription: 650V, 48A, XP Gen5 A5 IGBT in TO
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/205ns
Switching Energy: 400µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 236 A
Power - Max: 326 W
товар відсутній
IXYA50N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
1+615.44 грн
3+ 424.17 грн
8+ 385.81 грн
IXYA50N65C3IXYSDescription: IGBT 650V 130A 600W TO263
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
IXYA50N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+512.86 грн
3+ 340.38 грн
8+ 321.51 грн
IXYA50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXYA50N65C3IXYSIGBT Transistors 650V/130A XPT C3-Class TO-263
товар відсутній
IXYA50N65C3-TRLIXYSDiscrete Semiconductor Modules IXYA50N65C3 TRL
товар відсутній
IXYA50N65C3-TRLIXYSDescription: IXYA50N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 470µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXYA50N65C5IXYSIGBTs 650V, 50A, XPT Gen5 C5 IGBT in TO-263
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+460.68 грн
10+ 381.61 грн
50+ 313 грн
100+ 268.08 грн
250+ 253.59 грн
500+ 237.65 грн
1000+ 204.32 грн
IXYA55N65B5IXYSIGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+461.53 грн
10+ 399.94 грн
50+ 294.16 грн
100+ 268.08 грн
250+ 253.59 грн
500+ 237.65 грн
1000+ 204.32 грн
IXYA60N65A5IXYSIGBTs 650V, 60A, XPT Gen5 A5 IGBT in TO-263
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+440.4 грн
10+ 364.11 грн
50+ 299.23 грн
100+ 255.76 грн
250+ 241.99 грн
500+ 227.5 грн
1000+ 194.9 грн
IXYA60N65A5IXYSDescription: 650V, 60A, XP Gen5 A5 IGBT in TO
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
товар відсутній
IXYA8N250CHVIXYSDescription: IGBT 2500V 29A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
на замовлення 1026 шт:
термін постачання 21-31 дні (днів)
1+816.67 грн
50+ 636.71 грн
100+ 599.26 грн
500+ 509.66 грн
1000+ 467.48 грн
IXYA8N250CHVIXYSIGBTs TO263 2500V 8A XPT
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
1+890.93 грн
10+ 819.88 грн
25+ 702.8 грн
50+ 617.3 грн
100+ 581.08 грн
250+ 570.93 грн
500+ 514.42 грн
IXYA8N250CHVIXYSIXYA8N250CHV SMD IGBT transistors
товар відсутній
IXYA8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXYA8N90C3D1IXYSIGBTs 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode
товар відсутній
IXYA8N90C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
кількість в упаковці: 1 шт
товар відсутній
IXYA8N90C3D1IXYSDescription: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYA8N90C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
товар відсутній
IXYB82N120C3H1IXYSDescription: IGBT 1200V 164A 1040W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 164 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 1040 W
товар відсутній
IXYB82N120C3H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYB82N120C3H1 - IGBT, 164 A, 2.75 V, 1.04 kW, 1.2 kV, TO-264AA, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.75V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.04kW
Bauform - Transistor: TO-264AA
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT GenX3
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 164A
SVHC: Lead (17-Jan-2023)
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+2150.61 грн
5+ 2031.13 грн
10+ 1911.65 грн
IXYB82N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
товар відсутній
IXYB82N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 164A 1040W 3-Pin(3+Tab) PLUS 264
товар відсутній
IXYB82N120C3H1IXYSIGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+2469.93 грн
10+ 2245.51 грн
25+ 1864.95 грн
100+ 1667.15 грн
IXYB82N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
кількість в упаковці: 1 шт
товар відсутній
IXYF30N450IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
1+9303.25 грн
5+ 8853.72 грн
IXYF30N450IXYSIXYF30N450 THT IGBT transistors
товар відсутній
IXYF30N450IXYSDescription: IGBT 4500V 23A 230W ISOPLUS
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 230 W
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
1+9928.54 грн
10+ 9141.65 грн
IXYF40N450IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYF40N450Ixys CorporationHigh Voltage XPTTM IGBT
товар відсутній
IXYF40N450LittelfuseHigh Voltage XPTTM IGBT
товар відсутній
IXYF40N450Littelfuse Inc.Description: IGBT 4500V 32A ISOPLUS I4PAK
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 290 W
товар відсутній
IXYH100N65A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
кількість в упаковці: 1 шт
товар відсутній
IXYH100N65A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
товар відсутній
IXYH100N65A3IXYSIGBTs TO247 650V 100A GENX3
товар відсутній
IXYH100N65A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
товар відсутній
IXyH100N65C3IXYSIGBTs 650V/200A XPT C3-Class TO-247
товар відсутній
IXyH100N65C3IXYSDescription: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
1+673.24 грн
30+ 543.53 грн
IXyH100N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXYH100N65C3LittelfuseTrans IGBT Chip N-CH 650V 200A 830W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXyH100N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
товар відсутній
IXYH100N65C3LittelfuseTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH100N65C5IXYSDescription: 650V, 100A, XPT Gen5 C5 IGBT in
Packaging: Bulk
товар відсутній
IXYH100N65C5IXYSIGBTs 650V, 100A, XPT Gen5 C5 IGBT in TO-247AD
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+935.73 грн
10+ 789.89 грн
30+ 623.1 грн
120+ 572.38 грн
270+ 538.33 грн
510+ 505 грн
1020+ 454.28 грн
IXYH10N170CIXYSIXYH10N170C THT IGBT transistors
товар відсутній
IXYH10N170CIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
1+893.47 грн
10+ 795.72 грн
30+ 659.33 грн
120+ 572.38 грн
510+ 530.36 грн
IXYH10N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH10N170CIXYSDescription: IGBT 1700V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 17 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
1+809.61 грн
30+ 622.82 грн
120+ 557.27 грн
510+ 461.45 грн
IXYH10N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH10N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH10N170CV1IXYSDescription: IGBT 1.7KV 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
1+1034.55 грн
10+ 877.67 грн
100+ 759.06 грн
500+ 645.57 грн
1000+ 592.14 грн
IXYH10N170CV1IXYSIXYH10N170CV1 THT IGBT transistors
товар відсутній
IXYH10N170CV1LITTELFUSEDescription: LITTELFUSE - IXYH10N170CV1 - TRANSISTOR, IGBT, 1.7KV, 36A, TO-247AD
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.6
Verlustleistung Pd: 280
Bauform - Transistor: TO-247AD
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.7
Anzahl der Pins: 3
Produktpalette: XPT Series
DC-Kollektorstrom: 36
Betriebstemperatur, max.: 175
SVHC: To Be Advised
товар відсутній
IXYH10N170CV1IXYSIGBTs 1700V/10A XPT IGBT w/ Diode
на замовлення 455 шт:
термін постачання 21-30 дні (днів)
1+838.53 грн
10+ 714.06 грн
30+ 562.96 грн
120+ 515.87 грн
270+ 486.16 грн
510+ 455.01 грн
1020+ 415.16 грн
IXYH120N65A5LITTELFUSEDescription: LITTELFUSE - IXYH120N65A5 - IGBT, 290 A, 1.22 V, 830 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.22V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 830W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pins
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 290A
SVHC: No SVHC (17-Jan-2022)
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+880.24 грн
5+ 828.22 грн
10+ 775.39 грн
IXYH120N65A5IXYSIGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+806.41 грн
10+ 732.39 грн
30+ 544.12 грн
120+ 493.41 грн
510+ 435.44 грн
1020+ 391.25 грн
IXYH120N65A5LittelfuseExtreme Light Punch Through IGBT
товар відсутній
IXYH120N65A5IXYSDescription: IGBT 650V 120A X5 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 45ns/370ns
Switching Energy: 1.25mJ (on), 3.2mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+722.62 грн
30+ 555.22 грн
IXYH120N65B3IXYSIGBTs TO247 650V 120A GENX3
товар відсутній
IXYH120N65B3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 760 A
Power - Max: 1360 W
товар відсутній
IXYH120N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 1360 W
товар відсутній
IXYH120N65C3IXYSIGBTs TO247 650V 120A GENX3
товар відсутній
IXYH12N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
товар відсутній
IXYH12N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
кількість в упаковці: 1 шт
товар відсутній
IXYH12N250CIXYSDescription: IGBT 2500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYH12N250CV1HVIXYSDescription: IGBT 2500V 28A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYH12N250CV1HVIXYSIGBT Modules IGBT XPT-HI VOLTAGE
товар відсутній
IXYH12N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 80A
Turn-on time: 32ns
Turn-off time: 333ns
товар відсутній
IXYH12N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 80A
Turn-on time: 32ns
Turn-off time: 333ns
кількість в упаковці: 1 шт
товар відсутній
IXYH16N170CIXYSIXYH16N170C THT IGBT transistors
товар відсутній
IXYH16N170CIXYSDescription: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
на замовлення 1219 шт:
термін постачання 21-31 дні (днів)
1+769.64 грн
10+ 652.99 грн
100+ 564.71 грн
500+ 480.27 грн
1000+ 440.53 грн
IXYH16N170CIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
1+851.21 грн
10+ 771.56 грн
30+ 655.7 грн
120+ 572.38 грн
IXYH16N170CV1IXYSIXYH16N170CV1 THT IGBT transistors
товар відсутній
IXYH16N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH16N170CV1IXYSDescription: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1096.47 грн
10+ 929.89 грн
IXYH16N170CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
товар відсутній
IXYH16N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH16N250CIXYSDescription: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
товар відсутній
IXYH16N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
товар відсутній
IXYH16N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH16N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
товар відсутній
IXYH16N250CV1HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+2459.79 грн
10+ 2197.18 грн
120+ 1671.5 грн
270+ 1509.2 грн
IXYH16N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH16N250CV1HVIXYSDescription: IGBT 2500V 35A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
товар відсутній
IXYH1982LittelfuseIXYH1982^IXYS
товар відсутній
IXYH20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C3IXYSDescription: IGBT 1200V 40A 278W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYH20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
товар відсутній
IXYH20N120C3IXYSIGBTs GenX3 1200V XPT IGBT
товар відсутній
IXYH20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 300 шт
товар відсутній
IXYH20N120C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH20N120C3D1 - IGBT, 36 A, 4 V, 230 W, 1.2 kV, TO-247AD, 3 Pin(s)
MSL: MSL 1 - unbegrenzt
Kollektor-Emitter-Sättigungsspannung Vce(on): 4
Verlustleistung Pd: 230
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX3
DC-Kollektorstrom: 36
Betriebstemperatur, max.: 150
SVHC: No SVHC (07-Jul-2017)
товар відсутній
IXYH20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 36A 230W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
1+918.44 грн
2+ 612.83 грн
4+ 578.87 грн
IXYH20N120C3D1IXYSIGBTs XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
1+779.36 грн
10+ 737.39 грн
30+ 528.91 грн
120+ 476.74 грн
510+ 425.3 грн
1020+ 402.84 грн
IXYH20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
на замовлення 285 шт:
термін постачання 14-21 дні (днів)
1+1102.13 грн
2+ 763.69 грн
4+ 694.65 грн
IXYH20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C3D1IXYSDescription: IGBT 1200V 36A 230W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
1+697.54 грн
30+ 536.41 грн
120+ 479.95 грн
IXYH20N120C4IXYSDescription: IGBT DISCRETE TO-247
Packaging: Tube
товар відсутній
IXYH20N120C4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH20N65B3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
IXYH20N65B3IXYSIGBTs TO263 650V 20A XPT
товар відсутній
IXYH20N65C3IXYSIGBTs TO263 650V 20A XPT
товар відсутній
IXYH20N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYH20N65C3LittelfuseTrans IGBT Chip N-CH 650V 50A 230000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N65C3IXYSDescription: IGBT 650V 50A 230W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYH20N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYH20N65C3D1IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYH20N65C3D1IXYSIGBTs Disc IGBT XPT-GenX4 TO-247AD
товар відсутній
IXYH24N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N170CIXYSIGBT Transistors 1700V/58A High Volt
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
1+1084.51 грн
10+ 983.19 грн
30+ 819.45 грн
120+ 721.64 грн
510+ 641.94 грн
1020+ 605.71 грн
2520+ 584.7 грн
IXYH24N170CIxys CorporationTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
30+985.14 грн
Мінімальне замовлення: 30
IXYH24N170CIXYSIXYH24N170C THT IGBT transistors
товар відсутній
IXYH24N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N170CIXYSDescription: IGBT 1.7KV 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/160ns
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 529 шт:
термін постачання 21-31 дні (днів)
1+837.04 грн
30+ 643.63 грн
120+ 575.88 грн
510+ 476.86 грн
IXYH24N170CV1IXYSIXYH24N170CV1 THT IGBT transistors
товар відсутній
IXYH24N170CV1IXYSDescription: IGBT 1.7KV 58A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 16ns/155ns
Switching Energy: 3.6mJ (on), 1.76mJ (off)
Test Condition: 850V, 24A, 5Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 500 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1333.16 грн
10+ 1130.72 грн
100+ 977.9 грн
IXYH24N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N170CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
1+1364.3 грн
10+ 1184.83 грн
120+ 914.36 грн
510+ 880.31 грн
IXYH24N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N90C3IXYSDescription: IGBT 900V 46A 240W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 240 W
товар відсутній
IXYH24N90C3LittelfuseTrans IGBT Chip N-CH 900V 46A 240000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній
IXYH24N90C3IXYSIGBTs GenX3 900V XPT IGBTs
товар відсутній
IXYH24N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 300 шт
товар відсутній
IXYH24N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній
IXYH24N90C3D1IXYSIGBTs 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode
на замовлення 281 шт:
термін постачання 329-338 дні (днів)
1+763.3 грн
10+ 658.24 грн
30+ 522.39 грн
120+ 467.32 грн
IXYH24N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYH24N90C3D1IXYSDescription: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+682.65 грн
IXYH24N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 44A 200000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH25N250CHVIXYSIXYH25N250CHV THT IGBT transistors
товар відсутній
IXYH25N250CHVIXYSDescription: IGBT 2500V 235A TO-247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 365 шт:
термін постачання 21-31 дні (днів)
1+2638.89 грн
10+ 2258.36 грн
100+ 1975.25 грн
IXYH25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(3+Tab) TO-247HV
товар відсутній
IXYH25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937W 3-Pin(3+Tab) TO-247HV
товар відсутній
IXYH25N250CHVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
1+2636.46 грн
10+ 2426.32 грн
30+ 1999.71 грн
120+ 1797.57 грн
270+ 1680.19 грн
510+ 1659.91 грн
1020+ 1641.07 грн
IXYH25N250CHVLITTELFUSEDescription: LITTELFUSE - IXYH25N250CHV - TRANSISTOR, IGBT, 2.5KV, 95A, TO-247HV
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.4
Verlustleistung Pd: 937
Bauform - Transistor: TO-247HV
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 2.5
Anzahl der Pins: 3
Produktpalette: XPT Series
DC-Kollektorstrom: 95
Betriebstemperatur, max.: 175
SVHC: To Be Advised
товар відсутній
IXYH30N120A4IXYSIGBTs TO263 1200V 30A XPT
товар відсутній
IXYH30N120A4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
300+388.7 грн
Мінімальне замовлення: 300
IXYH30N120B4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 4.4mJ (on), 2.6mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 174 A
Power - Max: 500 W
товар відсутній
IXYH30N120B4IXYSIGBTs TO247 1200V 30A XPT
товар відсутній
IXYH30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N120C3IXYSDescription: IGBT 1200V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 441 шт:
термін постачання 21-31 дні (днів)
1+390.31 грн
30+ 299.78 грн
120+ 277.78 грн
IXYH30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500W 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N120C3
Код товару: 181016		Транзистори > IGBT
товар відсутній
IXYH30N120C3IXYSIGBTs 1200V XPT GenX3 IGBT
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
1+435.32 грн
30+ 391.61 грн
IXYH30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
IXYH30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 1 шт
товар відсутній
IXYH30N120C3D1IXYSIGBTs XPT 1200V IGBT GenX4 XPT IGBT
на замовлення 202 шт:
термін постачання 21-30 дні (днів)
1+622.98 грн
30+ 531.59 грн
IXYH30N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
IXYH30N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 300 шт
товар відсутній
IXYH30N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 66A 416000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH30N120C3D1IXYSDescription: IGBT 1200V 66A 416W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 133 A
Power - Max: 416 W
на замовлення 504 шт:
термін постачання 21-31 дні (днів)
1+558.03 грн
30+ 428.98 грн
120+ 397.51 грн
IXYH30N120C4LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N120C4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
IXYH30N120C4IXYSIGBTs TO247 1200V 30A XPT
товар відсутній
IXYH30N120C4H1IXYSIGBTs IXYH30N120C4H1
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
1+915.45 грн
30+ 721.56 грн
120+ 549.2 грн
270+ 531.81 грн
510+ 484.71 грн
1020+ 436.17 грн
2520+ 420.95 грн
IXYH30N120C4H1IXYSDescription: IGBT TRENCH 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
IXYH30N170CIXYSDescription: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+1437.4 грн
10+ 1271.78 грн
IXYH30N170CLittelfuseTrans IGBT Chip N-CH 1700V 100A 937W 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N170CIXYSIGBT Transistors 1700V/108A High Voltage XPT IGBT
на замовлення 234 шт:
термін постачання 21-30 дні (днів)
1+1442.06 грн
10+ 1276.48 грн
30+ 1059.27 грн
60+ 999.86 грн
120+ 978.12 грн
270+ 950.59 грн
IXYH30N170CIXYSIXYH30N170C THT IGBT transistors
товар відсутній
IXYH30N450HVLITTELFUSEDescription: LITTELFUSE - IXYH30N450HV - IGBT, 60 A, 3.2 V, 430 W, 4.5 kV, TO-247HV, 3 Pin(s)
MSL: -
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.2
Verlustleistung Pd: 430
Bauform - Transistor: TO-247HV
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 4.5
Anzahl der Pins: 3
Produktpalette: -
DC-Kollektorstrom: 60
Betriebstemperatur, max.: 150
SVHC: No SVHC (17-Jan-2022)
товар відсутній
IXYH30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N450HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 444 шт:
термін постачання 21-30 дні (днів)
1+3298.32 грн
10+ 2897.08 грн
30+ 2369.22 грн
60+ 2290.25 грн
120+ 2211.28 грн
270+ 2173.6 грн
IXYH30N450HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
1+2965.99 грн
IXYH30N450HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2471.66 грн
IXYH30N450HVIXYSDescription: IGBT 4500V 30A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-247HV
IGBT Type: PT
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 969 шт:
термін постачання 21-31 дні (днів)
1+4146.04 грн
10+ 3039.95 грн
100+ 2916.4 грн
IXYH30N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH30N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
товар відсутній
IXYH30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYH30N65C3IXYSDescription: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
товар відсутній
IXYH30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYH30N65C3IXYSIGBTs TO247 650V 30A GENX3
товар відсутній
IXYH30N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYH30N65C3H1IXYSIGBTs 650V/60A XPT C3 Copacked TO-247
товар відсутній
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH30N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYH30N65C3H1IXYSDescription: IGBT 650V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
товар відсутній
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120A4IXYSDescription: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
товар відсутній
IXYH40N120A4IXYSIGBTs TO247 1200V 40A IGBT
товар відсутній
IXYH40N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120B3IXYSIGBTs TO247 1200V 40A GENX3
товар відсутній
IXYH40N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
товар відсутній
IXYH40N120B3IXYSDescription: IGBT 1200V 96A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 577 W
товар відсутній
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
14+903.71 грн
25+ 861.98 грн
50+ 827.3 грн
100+ 769.63 грн
250+ 690.51 грн
Мінімальне замовлення: 14
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
товар відсутній
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
на замовлення 20634 шт:
термін постачання 21-31 дні (днів)
2+519.75 грн
10+ 508.57 грн
25+ 470.07 грн
50+ 449.54 грн
100+ 391.45 грн
1000+ 360.21 грн
Мінімальне замовлення: 2
IXYH40N120B3D1IXYSDescription: IGBT 1200V 86A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
на замовлення 5504 шт:
термін постачання 21-31 дні (днів)
1+963.23 грн
10+ 649.29 грн
100+ 492.06 грн
500+ 436.96 грн
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
на замовлення 20634 шт:
термін постачання 21-31 дні (днів)
22+559.73 грн
23+ 547.69 грн
25+ 506.23 грн
50+ 484.12 грн
100+ 421.56 грн
1000+ 387.92 грн
Мінімальне замовлення: 22
IXYH40N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120B3D1IXYSIGBTs TO247 1200V 40A GENX3
товар відсутній
IXYH40N120B4IXYSDescription: IGBT DISCRETE TO-247
товар відсутній
IXYH40N120B4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH40N120B4H1LittelfuseIGBT Transistors IXYH40N120B4H1
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
1+736.25 грн
10+ 622.41 грн
30+ 490.51 грн
120+ 450.66 грн
270+ 424.58 грн
510+ 397.77 грн
1020+ 357.92 грн
IXYH40N120B4H1IXYSDescription: IGBT TRENCH 1200V 112A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+851.15 грн
30+ 663.35 грн
120+ 624.34 грн
510+ 530.99 грн
IXYH40N120B4H1IXYSIGBTs IXYH40N120B4H1
на замовлення 359 шт:
термін постачання 21-30 дні (днів)
1+950.1 грн
10+ 874.87 грн
30+ 659.33 грн
120+ 620.2 грн
270+ 609.33 грн
510+ 562.24 грн
1020+ 515.14 грн
IXYH40N120C3IXYSDescription: IGBT 1200V 70A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
1+797.86 грн
30+ 613.36 грн
120+ 548.79 грн
IXYH40N120C3IXYSIGBTs GenX3 1200V XPT IGBT
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+890.93 грн
10+ 869.04 грн
30+ 607.88 грн
120+ 544.85 грн
510+ 481.09 грн
1020+ 432.55 грн
IXYH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120C3LittelfuseTrans IGBT Chip N-CH 1200V 90A 577000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
товар відсутній
IXYH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 80A 480000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
товар відсутній
IXYH40N120C3D1IXYSDescription: IGBT 1200V 64A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
товар відсутній
IXYH40N120C3D1IXYSIGBTs XPT 1200V IGBT GenX5 XPT IGBT
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
1+968.7 грн
10+ 954.03 грн
30+ 704.97 грн
60+ 665.85 грн
120+ 659.33 грн
270+ 515.14 грн
IXYH40N120C4IXYSDescription: IGBT DISCRETE TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
товар відсутній
IXYH40N120C4IXYSIGBTs TO247 1200V 40A IGBT
товар відсутній
IXYH40N120C4H1IXYSDescription: IGBT TRENCH 1200V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
на замовлення 1260 шт:
термін постачання 21-31 дні (днів)
1+740.64 грн
10+ 491.93 грн
100+ 366.8 грн
500+ 310.14 грн
IXYH40N120C4H1LittelfuseIGBT Transistors IXYH40N120C4H1
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
1+736.25 грн
10+ 622.41 грн
30+ 490.51 грн
120+ 450.66 грн
270+ 424.58 грн
510+ 397.77 грн
1020+ 357.92 грн
IXYH40N120C4H1IXYSIGBTs IXYH40N120C4H1
на замовлення 379 шт:
термін постачання 21-30 дні (днів)
1+826.69 грн
10+ 573.25 грн
IXYH40N65B3D1IXYSIGBTs TO247 650V 40A GENX3
товар відсутній
IXYH40N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N65B3D1IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
товар відсутній
IXYH40N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
товар відсутній
IXYH40N65C3IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3Ixys CorporationTrans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N65C3IXYSIGBTs 650V/80A XPT C3-Class TO-247
товар відсутній
IXYH40N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH40N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
товар відсутній
IXYH40N65C3D1IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3H1IXYSIGBTs 650V/80A XPT Copacked TO-247
на замовлення 242 шт:
термін постачання 343-352 дні (днів)
1+809.79 грн
10+ 684.07 грн
30+ 539.78 грн
120+ 466.6 грн
IXYH40N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
IXYH40N65C3H1IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N65C3H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH40N65C3H1 - IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.35
DC-Kollektorstrom: 40
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 650
Verlustleistung Pd: 300
Betriebstemperatur, max.: 175
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXYH40N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 80A 300000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N90C3IXYSDescription: IGBT 900V 105A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
товар відсутній
IXYH40N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N90C3IXYSIGBTs GenX3 900V XPT IGBTs
товар відсутній
IXYH40N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
товар відсутній
IXYH40N90C3D1IXYS/LittelfuseТранзистор IGBT; Uceb, В = 900; Ic = 90 А; Pmax, Вт = 500; Uce(on), В = 2,5; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247AD
на замовлення 3 шт:
термін постачання 3-4 дні (днів)
3+207.99 грн
10+ 178.12 грн
100+ 165.41 грн
Мінімальне замовлення: 3
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N90C3D1IXYSIGBTs XPT 900V IGBT GenX3 XPT IGBT
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
1+601 грн
30+ 491.6 грн
IXYH40N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Kind of package: tube
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 81ns
Turn-off time: 237ns
Type of transistor: IGBT
Power dissipation: 500W
Gate charge: 74nC
Technology: GenX3™; Planar; XPT™
Mounting: THT
Case: TO247-3
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
1+708.74 грн
2+ 473.97 грн
3+ 473.21 грн
6+ 447.55 грн
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N90C3D1LITTELFUSEDescription: LITTELFUSE - IXYH40N90C3D1 - IGBT, 90 A, 2.2 V, 500 W, 900 V, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 900V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 90A
SVHC: Boric acid (14-Jun-2023)
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
2+621.78 грн
5+ 596.58 грн
10+ 571.38 грн
50+ 507.17 грн
100+ 446.56 грн
250+ 424.97 грн
Мінімальне замовлення: 2
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Kind of package: tube
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 81ns
Turn-off time: 237ns
Type of transistor: IGBT
Power dissipation: 500W
Gate charge: 74nC
Technology: GenX3™; Planar; XPT™
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 216 шт:
термін постачання 14-21 дні (днів)
1+850.49 грн
2+ 590.63 грн
3+ 567.85 грн
6+ 537.06 грн
IXYH40N90C3D1IXYSDescription: IGBT 900V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
на замовлення 910 шт:
термін постачання 21-31 дні (днів)
1+594.08 грн
30+ 456.63 грн
120+ 423.12 грн
IXYH40N90C3D1 транзистор
Код товару: 193543		Транзистори > IGBT
товар відсутній
IXYH50N120C3LittelfuseTrans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
IXYH50N120C3IXYSDescription: IGBT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 750 W
товар відсутній
IXYH50N120C3IXYSIGBT Transistors XPT IGBT C3-Class 1200V/105A
на замовлення 360 шт:
термін постачання 439-448 дні (днів)
1+885.86 грн
10+ 769.06 грн
30+ 596.29 грн
IXYH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній
IXYH50N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+1092.11 грн
10+ 1074.85 грн
30+ 751.34 грн
60+ 741.92 грн
120+ 721.64 грн
IXYH50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 625W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
1+1026.54 грн
2+ 672.46 грн
4+ 635.48 грн
IXYH50N120C3D1Ixys CorporationTrans IGBT Chip N-CH 1200V 90A 625W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 90A 625000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 625W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
1+1231.85 грн
2+ 837.99 грн
4+ 762.57 грн
IXYH50N120C3D1IXYSDescription: IGBT 1200V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 625 W
товар відсутній
IXYH50N170CIXYSIGBT Transistors 1700V/178A High Volt
товар відсутній
IXYH50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
IXYH50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXYH50N65C3IXYSDescription: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXYH50N65C3IXYSIGBTs 650V/130A XPT C3-Class TO-247
товар відсутній
IXYH50N65C3D1IXYSDescription: IGBT 650V 132A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXYH50N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH50N65C3D1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
22+570.87 грн
23+ 544.82 грн
25+ 520.57 грн
50+ 477.8 грн
100+ 437.07 грн
Мінімальне замовлення: 22
IXYH50N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
IXYH50N65C3D1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
2+530.1 грн
10+ 505.91 грн
25+ 483.39 грн
50+ 443.68 грн
100+ 405.85 грн
Мінімальне замовлення: 2
IXYH50N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXYH50N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 130A 600W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
1+742.88 грн
2+ 493.59 грн
5+ 466.42 грн
IXYH50N65C3H1
Код товару: 189326		Транзистори > IGBT
Корпус: TO-247AD
Vces: 650 V
Vce: 2,1 V
Ic 25: 130 A
Ic 100: 50 A
td(on)/td(off) 100-150 град: 22/80
у наявності 24 шт:
19 шт - склад
2 шт - РАДІОМАГ-Київ
2 шт - РАДІОМАГ-Львів
1 шт - РАДІОМАГ-Дніпро
1+490 грн
IXYH50N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
на замовлення 243 шт:
термін постачання 14-21 дні (днів)
1+891.45 грн
2+ 615.09 грн
5+ 559.7 грн
IXYH50N65C3H1IXYSDescription: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+964.8 грн
10+ 650.8 грн
100+ 493.21 грн
500+ 438.16 грн
IXYH50N65C3H1IXYSIGBTs 650V/130A XPTI C3-Class TO-247
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
1+920.52 грн
10+ 744.06 грн
60+ 489.78 грн
270+ 482.54 грн
IXYH55N120A4IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH55N120A4 - IGBT, 175 A, 1.5 V, 650 W, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5
DC-Kollektorstrom: 175
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Verlustleistung Pd: 650
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4
SVHC: No SVHC (16-Jan-2020)
товар відсутній
IXYH55N120A4IXYSDescription: IGBT GENX4 1200V 55A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+908.37 грн
10+ 610.42 грн
100+ 460.95 грн
500+ 405.03 грн
IXYH55N120A4LittelfuseDiscrete IGBT XPT Gen 4 1200V TO247
товар відсутній
IXYH55N120A4IXYSIGBTs TO247 1200V 55A XPT
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)
1+851.21 грн
10+ 698.23 грн
30+ 505 грн
60+ 446.31 грн
IXYH55N120B4H1IXYSIGBTs IXYH55N120B4H1
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
1+1067.6 грн
30+ 884.04 грн
60+ 740.47 грн
120+ 682.51 грн
270+ 670.92 грн
510+ 618.75 грн
1020+ 567.31 грн
IXYH55N120B4H1IXYSDescription: IGBT TRENCH 1200V 138A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
товар відсутній
IXYH55N120C4IXYSDescription: IGBT 1200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
на замовлення 753 шт:
термін постачання 21-31 дні (днів)
1+553.33 грн
30+ 425.61 грн
120+ 380.81 грн
510+ 315.33 грн
IXYH55N120C4IXYSIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
на замовлення 1037 шт:
термін постачання 21-30 дні (днів)
1+617.91 грн
10+ 560.75 грн
30+ 417.33 грн
120+ 378.21 грн
1020+ 337.63 грн
2520+ 286.19 грн
IXYH55N120C4LITTELFUSEDescription: LITTELFUSE - IXYH55N120C4 - IGBT, 140 A, 2.1 V, 650 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.1V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 650W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 140A
SVHC: No SVHC (17-Jan-2023)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
2+651.85 грн
10+ 589.26 грн
Мінімальне замовлення: 2
IXYH55N120C4H1IXYSDescription: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
товар відсутній
IXYH55N120C4H1IXYSIGBTs IXYH55N120C4H1
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+917.98 грн
30+ 718.23 грн
60+ 623.82 грн
120+ 587.6 грн
270+ 577.45 грн
510+ 532.53 грн
1020+ 488.34 грн
IXYH60N65A5IXYSDescription: 650V, 60A, XPT Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
товар відсутній
IXYH60N65A5IXYSIGBTs 650V, 60A, XPT Gen5 A5 IGBT in TO-247AD
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
1+502.1 грн
10+ 415.77 грн
30+ 341.98 грн
120+ 291.99 грн
270+ 275.32 грн
510+ 259.38 грн
1020+ 222.43 грн
IXYH60N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 107nC
кількість в упаковці: 1 шт
на замовлення 191 шт:
термін постачання 14-21 дні (днів)
1+647.62 грн
3+ 446.74 грн
7+ 406.64 грн
IXYH60N90C3IXYSDescription: IGBT 900V 140A 750W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 30ns/87ns
Switching Energy: 2.7mJ (on), 1.55mJ (off)
Test Condition: 450V, 60A, 3Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 750 W
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
1+743.78 грн
30+ 571.73 грн
120+ 511.54 грн
510+ 423.58 грн
IXYH60N90C3IXYSIGBTs 900V 60A 2.7V XPT IGBT GenX3
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
1+800.49 грн
10+ 676.57 грн
30+ 500.65 грн
120+ 470.22 грн
270+ 469.5 грн
510+ 431.82 грн
1020+ 428.92 грн
IXYH60N90C3LittelfuseTrans IGBT Chip N-CH 900V 140A 750000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH60N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 107nC
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
1+539.68 грн
3+ 358.49 грн
7+ 338.87 грн
IXYH75N120B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
товар відсутній
IXYH75N120B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
IXYH75N120B4IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 22ns/182ns
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Test Condition: 600V, 50A, 3Ohm, 15V
Gate Charge: 157 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 1150 W
товар відсутній
IXYH75N65C3IXYSIGBTs 650V/170A XPT C3-Class TO-247
товар відсутній
IXYH75N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
товар відсутній
IXYH75N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
кількість в упаковці: 300 шт
товар відсутній
IXYH75N65C3IXYSDescription: IGBT 650V 170A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
товар відсутній
IXYH75N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH75N65C3D1IXYSDescription: IGBT PT 650V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
товар відсутній
IXYH75N65C3H1IXYSIGBTs 650V/170A XPT C3-Class TO-247
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
1+1326.26 грн
10+ 1016.52 грн
30+ 860.02 грн
60+ 725.26 грн
120+ 615.13 грн
IXYH75N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 170A 750000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH75N65C3H1IXYSDescription: IGBT 650V 170A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
1+1163.87 грн
10+ 793.06 грн
100+ 608.01 грн
500+ 558.09 грн
IXYH75N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
товар відсутній
IXYH75N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
кількість в упаковці: 1 шт
товар відсутній
IXYH80N90C3LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH80N90C3IXYSDescription: IGBT 900V 165A 830W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
1+1062.76 грн
30+ 828.43 грн
120+ 779.72 грн
510+ 663.13 грн
1020+ 608.25 грн
IXYH80N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Turn-on time: 134ns
Turn-off time: 201ns
товар відсутній
IXYH80N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Turn-on time: 134ns
Turn-off time: 201ns
кількість в упаковці: 1 шт
товар відсутній
IXYH80N90C3LittelfuseTrans IGBT Chip N-CH 900V 165A 830W 3-Pin(3+Tab) TO-247
товар відсутній
IXYH80N90C3IXYSIGBTs TO268 900V 80A XPT
на замовлення 515 шт:
термін постачання 21-30 дні (днів)
1+909.53 грн
30+ 829.05 грн
IXYH82N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
кількість в упаковці: 1 шт
товар відсутній
IXYH82N120C3LittelfuseTrans IGBT Chip N-CH 1200V 200A 1250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH82N120C3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH82N120C3 - IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 3.2V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.25kW
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 82A
SVHC: No SVHC (17-Jan-2023)
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
1+1407.73 грн
5+ 1273.62 грн
10+ 1139.51 грн
IXYH82N120C3IXYSIGBT Transistors XPT IGBT C3-Class 1200V/160A
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
1+1617.88 грн
10+ 1400.63 грн
IXYH82N120C3LittelfuseTrans IGBT Chip N-CH 1200V 200A 1250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH82N120C3IXYSDescription: IGBT 1200V 200A 1250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+1504.8 грн
30+ 1172.96 грн
120+ 1103.96 грн
IXYH82N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
товар відсутній
IXYH85N120A4
Код товару: 197385		Транзистори > IGBT
товар відсутній
IXYH85N120A4IXYSDescription: IGBT GENX4 1200V 85A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
30+1221.79 грн
90+ 1107.32 грн
300+ 1072.71 грн
Мінімальне замовлення: 30
IXYH85N120A4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Kind of package: tube
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
Power dissipation: 1.15kW
товар відсутній
IXYH85N120A4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Kind of package: tube
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
Power dissipation: 1.15kW
кількість в упаковці: 1 шт
товар відсутній
IXYH85N120A4LittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYH85N120A4IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH85N120A4 - IGBT, 300 A, 1.5 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5
DC-Kollektorstrom: 300
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Verlustleistung Pd: 1.15
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4
SVHC: No SVHC (16-Jan-2020)
товар відсутній
IXYH85N120A4IXYSIGBTs TO247 1200V 85A XPT
на замовлення 1553 шт:
термін постачання 21-30 дні (днів)
1+1622.95 грн
10+ 1410.63 грн
30+ 1000.58 грн
60+ 978.12 грн
120+ 954.21 грн
270+ 881.76 грн
IXYH85N120C4LITTELFUSEDescription: LITTELFUSE - IXYH85N120C4 - IGBT, 240 A, 2 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.15kW
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 240A
SVHC: Boric acid (14-Jun-2023)
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+975.33 грн
5+ 882.68 грн
10+ 789.21 грн
IXYH85N120C4IXYSIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+1157.2 грн
10+ 1065.68 грн
30+ 803.51 грн
60+ 802.78 грн
120+ 755.69 грн
270+ 742.65 грн
510+ 678.89 грн
IXYH85N120C4IXYSDescription: IGBT 1200V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 293 шт:
термін постачання 21-31 дні (днів)
1+1036.12 грн
30+ 807.88 грн
120+ 760.37 грн
IXYH8N250CLittelfuseIXYH8N250C
товар відсутній
IXYH8N250CIXYSIXYH8N250C THT IGBT transistors
товар відсутній
IXYH8N250CIXYSDescription: IGBT 2500V 29A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXYH8N250CHVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXYH8N250CHVIXYSIGBTs TO263 2500V 8A XPT
на замовлення 514 шт:
термін постачання 21-30 дні (днів)
1+1555.33 грн
10+ 1350.64 грн
30+ 1111.43 грн
60+ 1078.83 грн
120+ 1015.8 грн
270+ 917.26 грн
2520+ 839.01 грн
IXYH8N250CHVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH8N250CHVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
на замовлення 5010 шт:
термін постачання 21-31 дні (днів)
300+1202 грн
Мінімальне замовлення: 300
IXYH8N250CHVIXYSIXYH8N250CHV THT IGBT transistors
на замовлення 58 шт:
термін постачання 14-21 дні (днів)
1+1577.67 грн
2+ 1491.63 грн
IXYH8N250CV1HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH8N250CV1HVIXYSIXYH8N250CV1HV THT IGBT transistors
товар відсутній
IXYH8N250CV1HVIXYSDescription: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXYH8N250CV1HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
товар відсутній
IXYH90N65A5LITTELFUSEDescription: LITTELFUSE - IXYH90N65A5 - IGBT, 220 A, 1.22 V, 650 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
hazardous: false
Kollektor-Emitter-Sättigungsspannung: 1.22
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.22
Verlustleistung Pd: 650
euEccn: NLR
Verlustleistung: 650
Bauform - Transistor: TO-247
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 650
Anzahl der Pins: 3
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650
DC-Kollektorstrom: 220
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 220
SVHC: No SVHC (17-Jan-2022)
товар відсутній
IXYH90N65A5IXYSDescription: IGBT PT 650V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/420ns
Switching Energy: 1.3mJ (on), 3.4mJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 650 W
товар відсутній
IXYH90N65A5IXYSIGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
на замовлення 326 шт:
термін постачання 21-30 дні (днів)
1+705.82 грн
10+ 529.92 грн
30+ 456.46 грн
120+ 410.09 грн
510+ 317.35 грн
IXYJ20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
товар відсутній
IXYJ20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 21A 105000mW 3-Pin(3+Tab) TO-247 ISO
товар відсутній
IXYJ20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
кількість в упаковці: 1 шт
товар відсутній
IXYJ20N120C3D1IXYSDescription: IGBT 1200V 21A 105W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISO247
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 105 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
IXYJ20N120C3D1IXYSIGBTs XPT 1200V IGBT GenX7 XPT IGBT
товар відсутній
IXYK100N120B3IXYSLittelfuse
товар відсутній
IXYK100N120B3LittelfuseTrans IGBT Chip N-CH 1200V 225A 1150000mW
товар відсутній
IXYK100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150mW 3-Pin(3+Tab) TO-264AA
товар відсутній
IXYK100N120C3IXYSIGBT Transistors 1200V 188A XPT IGBT
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+2078.57 грн
10+ 1889.73 грн
25+ 1568.61 грн
100+ 1402.7 грн
IXYK100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) TO-264AA
товар відсутній
IXYK100N120C3IXYSDescription: IGBT 1200V 188A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
1+2062.05 грн
10+ 1831.33 грн
IXYK100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYK100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYK100N65B3D1IXYSDescription: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
товар відсутній
IXYK100N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-264(3)
товар відсутній
IXYK100N65B3D1LittelfuseXPTTM 650V IGBT IXYK100N65B3D1
товар відсутній
IXYK110N120A4IXYSIGBTs TO264 1200V 110A GENX4
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
1+2289.89 грн
10+ 2005.54 грн
25+ 1535.29 грн
50+ 1520.07 грн
100+ 1516.45 грн
250+ 1423.71 грн
500+ 1309.23 грн
IXYK110N120A4LITTELFUSEDescription: LITTELFUSE - IXYK110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, TO-264, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.45V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.36kW
Bauform - Transistor: TO-264
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: No
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 375A
SVHC: Boric acid (14-Jun-2023)
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
1+2818.71 грн
5+ 2577.32 грн
10+ 2335.92 грн
50+ 2101.9 грн
100+ 1877.52 грн
IXYK110N120A4IXYSDescription: IGBT 1200V 110A GENX4 XPT TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
1+2100.45 грн
25+ 1676.66 грн
100+ 1571.88 грн
500+ 1258.8 грн
IXYK110N120B4LITTELFUSEDescription: LITTELFUSE - IXYK110N120B4 - IGBT, 340 A, 1.66 V, 1.36 kW, 1.2 kV, TO-264, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.66V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.36kW
Bauform - Transistor: TO-264
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 340A
SVHC: Boric acid (14-Jun-2023)
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+1464.63 грн
5+ 1339.46 грн
10+ 1214.29 грн
IXYK110N120B4IXYSDescription: IGBT 1200V 110A GEN4 XPT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+1507.94 грн
25+ 1203.66 грн
100+ 1128.43 грн
IXYK110N120B4IXYSIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
1+1683.82 грн
10+ 1557.28 грн
25+ 1196.2 грн
50+ 1175.19 грн
100+ 1121.58 грн
250+ 1079.55 грн
500+ 962.9 грн
IXYK110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
1+1581.54 грн
10+ 1451.46 грн
25+ 1072.31 грн
100+ 1053.47 грн
250+ 1042.6 грн
500+ 904.22 грн
IXYK110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
товар відсутній
IXYK120N120B3IXYSIGBTs TO264 1200V 120A GENX3
товар відсутній
IXYK120N120B3IXYSDescription: DISC IGBT XPT-GENX3 TO-264(3)
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
товар відсутній
IXYK120N120C3IXYSDescription: IGBT 1200V 240A 1500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
1+2506.43 грн
25+ 2001.04 грн
100+ 1875.99 грн
IXYK120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
1+1569.47 грн
2+ 1378.12 грн
3+ 1377.37 грн
IXYK120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
кількість в упаковці: 1 шт
на замовлення 218 шт:
термін постачання 14-21 дні (днів)
1+1883.37 грн
2+ 1717.35 грн
3+ 1652.84 грн
IXYK120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXYK120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 240A 1500W 3-Pin(3+Tab) TO-264
товар відсутній
IXYK120N120C3IXYSIGBTs 1200V 220A XPT IGBT
на замовлення 153 шт:
термін постачання 21-30 дні (днів)
1+2799.6 грн
10+ 2567.13 грн
25+ 1988.12 грн
50+ 1935.23 грн
100+ 1863.5 грн
250+ 1775.83 грн
500+ 1651.21 грн
IXYK120N120C3LITTELFUSEDescription: LITTELFUSE - IXYK120N120C3 - TRANSISTOR, IGBT, 1.2KV, 240A, TO-264
tariffCode: 85412900
Transistormontage: Through Hole
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.55
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5
Bauform - Transistor: TO-264
Anzahl der Pins: 3
Produktpalette: XPT GenX3 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
Betriebstemperatur, max.: 175
directShipCharge: 25
Kontinuierlicher Kollektorstrom: 240
SVHC: To Be Advised
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1294.76 грн
5+ 1268.75 грн
IXYK140N120A4LittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYK140N120A4IXYSIGBTs TO264 1200V 140A GENX4
на замовлення 2116 шт:
термін постачання 21-30 дні (днів)
1+3904.39 грн
10+ 3791.12 грн
25+ 2880.02 грн
2500+ 2617.01 грн
IXYK140N120A4LITTELFUSEDescription: LITTELFUSE - IXYK140N120A4 - IGBT, 480 A, 1.34 V, 1.5 kW, 1.2 kV, TO-264, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.34V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5kW
Bauform - Transistor: TO-264
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 480A
SVHC: Boric acid (14-Jun-2023)
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+3709.52 грн
5+ 3408.79 грн
IXYK140N120A4IXYSDescription: IGBT 140A 1200V TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+3496.31 грн
IXYK140N90C3IXYSDescription: IGBT 900V 310A 1630W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
на замовлення 377 шт:
термін постачання 21-31 дні (днів)
1+2004.05 грн
25+ 1599.89 грн
100+ 1499.88 грн
IXYK140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
товар відсутній
IXYK140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXYK140N90C3IXYSIGBTs TO264 900V 140A GENX3
товар відсутній
IXYK180N65A5IXYSIGBTs 650V, 180A, XPT Gen5 A5 IGBT in TO-264
на замовлення 400 шт:
термін постачання 343-352 дні (днів)
1+1521.52 грн
10+ 1321.48 грн
25+ 1117.23 грн
50+ 1054.2 грн
100+ 889.73 грн
IXYK180N65A5IXYSDescription: 650V, 180A, XP Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXYK)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
товар відсутній
IXYK200N65B3IXYSIXYK200N65B3 THT IGBT transistors
товар відсутній
IXYK220N65A5IXYSIGBTs 650V, 220A, XPT Gen5 A5 IGBT in TO-264
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+1922.19 грн
10+ 1763.91 грн
25+ 1303.44 грн
100+ 1279.53 грн
250+ 1194.76 грн
500+ 1098.39 грн
IXYK220N65A5IXYSDescription: 650V, 220A, XPT Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/540ns
Switching Energy: 1.3mJ (on), 7.95mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.18 kA
Power - Max: 1.16 kW
товар відсутній
IXYK300N65A3LittelfuseIGBT Transistors IGBT DISC XPT
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+2894.27 грн
10+ 2630.45 грн
25+ 2038.84 грн
100+ 1943.2 грн
250+ 1941.02 грн
500+ 1867.12 грн
1000+ 1841.76 грн
IXYK30N170CV1IXYSDescription: DISC IGBT XPT-HI VOLTAGE TO-264(
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/143ns
Switching Energy: 3.6mJ (on), 1.8mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 937 W
товар відсутній
IXYK85N120C4H1IXYSIGBTs IXYK85N120C4H1
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
1+1983.89 грн
10+ 1834.74 грн
25+ 1409.94 грн
50+ 1385.31 грн
100+ 1349.08 грн
250+ 1225.91 грн
500+ 1133.89 грн
IXYK85N120C4H1IXYSDescription: IGBT TRENCH 1200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
1+1844.95 грн
25+ 1472.89 грн
IXYL40N250CV1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYL40N250CV1IXYSDescription: IGBT 2500V 70A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 577 W
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
1+6216.7 грн
10+ 5465.32 грн
100+ 4943.89 грн
IXYL40N250CV1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
товар відсутній
IXYL40N250CV1IXYSIGBTs ISOPLUS 2500V 40A DIODE
товар відсутній
IXYL50N170CV1Littelfuse Disc IGBT XPT-Hi Voltage ISOPLUS264
товар відсутній
IXYL60N450IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
товар відсутній
IXYL60N450IXYSIGBTs ISOPLUS 4500V 38A IGBT
на замовлення 118 шт:
термін постачання 21-30 дні (днів)
1+9737.73 грн
10+ 9114.52 грн
IXYL60N450LITTELFUSEDescription: LITTELFUSE - IXYL60N450 - TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK
Kollektor-Emitter-Spannung, max.: 4.5
Verlustleistung: 417
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 90
Bauform - Transistor: ISOPLUS i5-PAK
Kollektor-Emitter-Sättigungsspannung: 2.64
Betriebstemperatur, max.: 150
Produktpalette: XPT Series
SVHC: To Be Advised
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+10644.14 грн
5+ 10411.68 грн
10+ 10177.6 грн
IXYL60N450LittelfuseHigh Voltage IGBT
товар відсутній
IXYL60N450IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYL60N450IXYSDescription: IGBT 4500V 90A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
1+9055.45 грн
25+ 7777.05 грн
IXYN100N120B3H1LittelfuseTrans IGBT Chip N-CH 1200V 165A 690000mW 4-Pin SOT-227B
товар відсутній
IXYN100N120B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN100N120B3H1LittelfuseTrans IGBT Chip N-CH 1200V 165A 690W 4-Pin SOT-227B
товар відсутній
IXYN100N120B3H1IXYSDescription: IGBT MOD 1200V 165A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+2924.17 грн
10+ 2627.57 грн
IXYN100N120B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN100N120B3H1IXYSIGBT Transistors IGBT XPT-GENX3 SOT-227UI(
товар відсутній
IXYN100N120C3IXYSDescription: IGBT MOD 1200V 152A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 152 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+3588.79 грн
IXYN100N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 17 шт:
термін постачання 337-346 дні (днів)
1+3707.44 грн
10+ 3409.51 грн
30+ 2840.17 грн
IXYN100N120C3LittelfuseTrans IGBT Module N-CH 1200V 152A 830000mW
товар відсутній
IXYN100N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 152A 830000mW
товар відсутній
IXYN100N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 134A 690000mW 4-Pin SOT-227B
товар відсутній
IXYN100N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN100N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 140A 690W 4-Pin SOT-227B
товар відсутній
IXYN100N120C3H1IXYSDescription: IGBT MOD 1200V 134A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
товар відсутній
IXYN100N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN100N120C3H1IXYSIGBTs XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 280 шт:
термін постачання 445-454 дні (днів)
1+3094.6 грн
10+ 2717.94 грн
IXYN100N65A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Collector current: 100A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 300 шт
товар відсутній
IXYN100N65A3LittelfuseIGBT Module, 650V IGBT Gen X3TM
товар відсутній
IXYN100N65A3IXYSDescription: IGBT MOD 650V 170A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 25 µA
товар відсутній
IXYN100N65A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Collector current: 100A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN100N65A3IXYSIGBTs SOT227 650V 100A GENX3
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
1+2331.31 грн
10+ 2080.53 грн
20+ 1731.63 грн
50+ 1714.97 грн
100+ 1612.09 грн
IXYN100N65B3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN100N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN100N65B3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN100N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 185 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V
товар відсутній
IXYN100N65C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN100N65C3H1IXYSDescription: IGBT MOD 650V 166A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
товар відсутній
IXYN100N65C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN100N65C3H1IXYSIGBTs 650V/166A XPT Copacked SOT-227B
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+2399.78 грн
10+ 2150.52 грн
20+ 1772.93 грн
IXYN100N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 160A 600W 4-Pin SOT-227B
товар відсутній
IXYN100N65C3H1LITTELFUSEDescription: LITTELFUSE - IXYN100N65C3H1 - IGBT-Modul, Einfach, 160 A, 1.8 V, 600 W, 175 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: -
Sperrschichttemperatur Tj, max.: 175°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.8V
Dauer-Kollektorstrom: 160A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.8V
Verlustleistung Pd: 600W
euEccn: NLR
Verlustleistung: 600W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 650V
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 650V
IGBT-Konfiguration: Einfach
productTraceability: No
DC-Kollektorstrom: 160A
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2022)
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
1+2569.19 грн
10+ 2370.06 грн
30+ 2196.94 грн
100+ 1879.26 грн
IXYN110N120A4IXYSIGBTs SOT227 1200V 110A GENX4
на замовлення 194 шт:
термін постачання 21-30 дні (днів)
1+2915.4 грн
10+ 2398.82 грн
20+ 2069.27 грн
50+ 1885.96 грн
500+ 1796.84 грн
IXYN110N120A4IXYSDescription: IGBT PT 1200V 275A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+2750.96 грн
10+ 2360.54 грн
IXYN110N120B4H1LittelfuseDisc IGBT XPT Gen4 1200V 110A SOT227B
товар відсутній
IXYN110N120B4H1IXYSDescription: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
товар відсутній
IXYN110N120B4H1IXYSIGBT Modules IXYN110N120B4H1
на замовлення 300 шт:
термін постачання 385-394 дні (днів)
1+3341.43 грн
10+ 2935.41 грн
20+ 2551.81 грн
IXYN110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+2641.24 грн
10+ 2260.09 грн
100+ 1976.77 грн
IXYN110N120C4IXYSIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
1+2879.9 грн
10+ 2521.3 грн
20+ 2111.29 грн
50+ 2075.06 грн
100+ 1917.84 грн
200+ 1846.84 грн
500+ 1769.31 грн
IXYN110N120C4H1IXYSIGBT Modules IXYN110N120C4H1
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
1+3429.34 грн
10+ 3012.07 грн
20+ 2463.41 грн
50+ 2381.54 грн
100+ 2298.94 грн
200+ 2217.07 грн
500+ 2114.91 грн
IXYN110N120C4H1IXYSDescription: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)
1+3094.24 грн
10+ 2233 грн
100+ 2045.09 грн
IXYN110N120C4H1LittelfuseIGBT Modules IXYN110N120C4H1
на замовлення 398 шт:
термін постачання 21-30 дні (днів)
1+3552.75 грн
10+ 3120.38 грн
20+ 2551.81 грн
50+ 2466.31 грн
IXYN120N120C3IXYSIGBTs SOT227 1200V 120A XPT
на замовлення 318 шт:
термін постачання 21-30 дні (днів)
1+3161.38 грн
10+ 2776.27 грн
20+ 2270.69 грн
50+ 2195.34 грн
100+ 2119.26 грн
200+ 2096.8 грн
IXYN120N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN120N120C3IXYSDescription: IGBT MOD 1200V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B - miniBLOC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200 W
Current - Collector Cutoff (Max): 25 µA
на замовлення 187 шт:
термін постачання 21-31 дні (днів)
1+2831.69 грн
10+ 2429.68 грн
100+ 2132.66 грн
IXYN120N120C3LittelfuseTrans IGBT Module N-CH 1200V 240A 1200000mW
товар відсутній
IXYN120N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN120N65B3D1LittelfuseTrans IGBT Module N-CH 650V 250A 830000mW
товар відсутній
IXYN120N65B3D1LittelfuseTrans IGBT Module N-CH 650V 250A 830000mW
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+4620.21 грн
10+ 4349.87 грн
25+ 4149.53 грн
50+ 3752.46 грн
100+ 3314.37 грн
IXYN120N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN120N65B3D1IXYSDescription: IGBT MODULE DISC IGBT SOT-227UI
товар відсутній
IXYN120N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN120N65C3D1IXYSDescription: IGBT PT 650V 190A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 830 W
товар відсутній
IXYN140N120A4IXYSDescription: IGBT 140A 1200V SOT227B MINIBLOC
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
товар відсутній
IXYN140N120A4LittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYN140N120A4IXYSIGBTs SOT227 1200V 140A XPT
на замовлення 150 шт:
термін постачання 519-528 дні (днів)
1+4099.65 грн
10+ 3673.64 грн
IXYN150N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN150N60B3IXYSIGBTs SOT227 600V 140A GENX3
на замовлення 298 шт:
термін постачання 343-352 дні (днів)
1+1954.31 грн
10+ 1710.59 грн
20+ 1452.69 грн
IXYN150N60B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
товар відсутній
IXYN150N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN180N65A5IXYSIGBTs 650V, 180A, XPT Gen5 A5 IGBT in SOT-227
на замовлення 400 шт:
термін постачання 343-352 дні (днів)
1+2386.25 грн
10+ 2089.7 грн
20+ 1695.41 грн
50+ 1453.41 грн
IXYN180N65A5IXYSDescription: 650V, 180A, XP Gen5 A5 IGBT in S
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8640 pF @ 25 V
товар відсутній
IXYN200N65B5IXYSIGBTs 650V, 200A, XPT Gen5 B5 IGBT in SOT-227
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
1+2928.93 грн
10+ 2453.81 грн
20+ 2042.46 грн
50+ 1977.98 грн
100+ 1914.22 грн
200+ 1786.7 грн
500+ 1643.97 грн
IXYN220N65A5IXYSIGBTs 650V, 220A, XPT Gen5 A5 IGBT in SOT-227
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+2928.93 грн
10+ 2453.81 грн
20+ 2042.46 грн
50+ 1977.98 грн
100+ 1914.22 грн
200+ 1786.7 грн
500+ 1643.97 грн
IXYN220N65A5IXYSDescription: 650V, 220A, XP Gen5 A5 IGBT in S
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1.2 kW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 11.7 pF @ 25 V
товар відсутній
IXYN300N65A3IXYSDescription: DISC IGBT XPT-GENX3 SOT-227B(MIN
товар відсутній
IXYN300N65A3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
товар відсутній
IXYN30N170CV1IXYSIXYN30N170CV1 IGBT modules
товар відсутній
IXYN30N170CV1IXYSDescription: 1700V/85A HIGH VOLTAGE XPT IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 680 W
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
1+2704.72 грн
10+ 1936.77 грн
100+ 1730.79 грн
IXYN30N170CV1LittelfuseIGBT Module, High Voltage IGBT w/ Diode
товар відсутній
IXYN30N170CV1IXYSIGBT Modules 1700V/85A High Voltage XPT IGBT
на замовлення 322 шт:
термін постачання 21-30 дні (днів)
1+2902.72 грн
10+ 2549.63 грн
20+ 2084.48 грн
50+ 2054.78 грн
IXYN50N170CV1IXYSIGBT Transistors 1700V/120A High Volt
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
1+3687.15 грн
10+ 3237.87 грн
20+ 2722.8 грн
50+ 2673.53 грн
100+ 2630.78 грн
IXYN50N170CV1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Power dissipation: 880W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Case: SOT227B
Max. off-state voltage: 1.7kV
товар відсутній
IXYN50N170CV1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Power dissipation: 880W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Case: SOT227B
Max. off-state voltage: 1.7kV
кількість в упаковці: 1 шт
товар відсутній
IXYN50N170CV1IXYSDescription: IGBT 1700V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 22ns/236ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 485 A
Power - Max: 880 W
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
1+3394.42 грн
10+ 2912.4 грн
100+ 2556.35 грн
IXYN50N170CV1LittelfuseTrans IGBT Module N-CH 1700V 120A 880000mW
товар відсутній
IXYN75N65C3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN75N65C3D1IXYSDescription: IGBT 650V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
товар відсутній
IXYN75N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN75N65C3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN75N65C3H1LittelfuseIXYN75N65C3H1
товар відсутній
IXYN80N90C3H1IXYSIGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
товар відсутній
IXYN80N90C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 70A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+2588.7 грн
IXYN80N90C3H1LittelfuseTrans IGBT Module N-CH 900V
товар відсутній
IXYN80N90C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 70A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)
1+3106.44 грн
IXYN80N90C3H1IXYSDescription: IGBT MOD 900V 115A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.55 nF @ 25 V
товар відсутній
IXYN82N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN82N120C3LittelfuseIGBT Module, 1200V XPT IGBT
товар відсутній
IXYN82N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN82N120C3IXYSDescription: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+2317.55 грн
10+ 1983.03 грн
100+ 1734.45 грн
IXYN82N120C3IXYSIGBT Transistors 1200V XPT IGBT GenX3
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+3076.01 грн
10+ 2702.11 грн
20+ 2209.1 грн
50+ 2135.2 грн
100+ 2062.02 грн
200+ 1988.12 грн
500+ 1930.16 грн
IXYN82N120C3H1IXYSDescription: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
товар відсутній
IXYN82N120C3H1LittelfuseTrans IGBT Module N-CH 1200V 105A 500000mW
товар відсутній
IXYN82N120C3H1IXYSIGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
на замовлення 300 шт:
термін постачання 462-471 дні (днів)
1+3847.76 грн
10+ 3378.68 грн
IXYN82N120C3H1LittelfuseTrans IGBT Module N-CH 1200V 105A 500000mW
товар відсутній
IXYN82N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 66A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN82N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 66A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN85N120C4H1IXYSIGBT Modules IXYN85N120C4H1
на замовлення 686 шт:
термін постачання 21-30 дні (днів)
1+2912.02 грн
10+ 2178.02 грн
100+ 1755.54 грн
IXYN85N120C4H1IXYSDescription: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+2663.97 грн
10+ 1905.75 грн
100+ 1698.31 грн
IXYP10N65B3D1IXYSDescription: IGBT PT 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/125ns
Switching Energy: 300µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 160 W
товар відсутній
IXYP10N65B3D1LittelfuseXPTTM 650V IGBT GenX3TM w/Diode
товар відсутній
IXYP10N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+349.95 грн
10+ 303.29 грн
50+ 223.88 грн
100+ 203.59 грн
250+ 192 грн
500+ 180.41 грн
1000+ 154.33 грн
IXYP10N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
товар відсутній
IXYP10N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
кількість в упаковці: 1 шт
товар відсутній
IXYP10N65C3IXYSDescription: IGBT 650V 30A 160W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
товар відсутній
IXYP10N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP10N65C3D1IXYSDescription: IGBT PT 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
товар відсутній
IXYP10N65C3D1MIXYSDescription: IGBT 650V 15A TO220 ISOL TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
товар відсутній
IXYP10N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
кількість в упаковці: 1 шт
на замовлення 35 шт:
термін постачання 14-21 дні (днів)
2+213.6 грн
3+ 186.22 грн
8+ 142.19 грн
21+ 134.94 грн
Мінімальне замовлення: 2
IXYP10N65C3D1MIXYSIGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP10N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
3+149.44 грн
8+ 118.49 грн
21+ 112.45 грн
Мінімальне замовлення: 3
IXYP15N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP15N65B3D1IXYSDescription: IGBT TO220AB
Packaging: Tube
Part Status: Active
товар відсутній
IXYP15N65C3IXYSIGBTs TO220 650V 15A GENX3
товар відсутній
IXYP15N65C3IXYSDescription: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYP15N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
товар відсутній
IXYP15N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
кількість в упаковці: 1 шт
товар відсутній
IXYP15N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
товар відсутній
IXYP15N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
товар відсутній
IXYP15N65C3D1LittelfuseHigh Performance 650V IGBT Chip
товар відсутній
IXYP15N65C3D1IXYSIGBTs TO220 650V 15A DIODE
товар відсутній
IXYP15N65C3D1IXYSDescription: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYP15N65C3D1LittelfuseHigh Performance 650V IGBT Chip
товар відсутній
IXYP15N65C3D1MIXYSIGBTs 650V/16A XPT IGBT C3 Copacked TO-220
товар відсутній
IXYP15N65C3D1MIXYSDescription: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
товар відсутній
IXYP15N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
товар відсутній
IXYP15N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
кількість в упаковці: 1 шт
товар відсутній
IXYP20N120A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
товар відсутній
IXYP20N120A4Littelfuse1200V IGBT Chip Transistor
товар відсутній
IXYP20N120A4IXYSIGBTs TO263 1200V 20A XPT
товар відсутній
IXYP20N120B4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP20N120B4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
товар відсутній
IXYP20N120C3IXYSIGBTs GenX3 1200V XPT IGBT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+466.6 грн
10+ 364.95 грн
100+ 272.42 грн
500+ 258.66 грн
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
2+310.24 грн
10+ 307.19 грн
25+ 304.08 грн
50+ 265.71 грн
100+ 210.57 грн
Мінімальне замовлення: 2
IXYP20N120C3IXYSDescription: IGBT 1200V 40A 278W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYP20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
товар відсутній
IXYP20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
37+334.1 грн
Мінімальне замовлення: 37
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP20N120C3 транзистор
Код товару: 203199		Транзистори > IGBT
товар відсутній
IXYP20N120C4IXYSIGBTs TO247 1200V 20A IGBT
товар відсутній
IXYP20N120C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
300+317.35 грн
Мінімальне замовлення: 300
IXYP20N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
кількість в упаковці: 1 шт
товар відсутній
IXYP20N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP20N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
IXYP20N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
товар відсутній
IXYP20N65C3IXYSIGBTs TO220 650V 20A GENX3
товар відсутній
IXYP20N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
товар відсутній
IXYP20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP20N65C3D1LITTELFUSEDescription: LITTELFUSE - IXYP20N65C3D1 - IGBT, 50 A, 2.27 V, 200 W, 650 V, TO-220AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.27V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 50A
SVHC: Boric acid (14-Jun-2023)
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
4+266.59 грн
10+ 211.32 грн
100+ 181.25 грн
500+ 149.44 грн
Мінімальне замовлення: 4
IXYP20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(3+Tab) TO-220AB
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
3+131.87 грн
Мінімальне замовлення: 3
IXYP20N65C3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
на замовлення 1396 шт:
термін постачання 21-30 дні (днів)
2+287.4 грн
10+ 238.3 грн
50+ 194.9 грн
100+ 167.37 грн
250+ 157.95 грн
500+ 148.53 грн
1000+ 126.07 грн
Мінімальне замовлення: 2
IXYP20N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+239.77 грн
7+ 144.91 грн
17+ 137.36 грн
Мінімальне замовлення: 2
IXYP20N65C3D1IXYSDescription: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
2+257.85 грн
50+ 196.57 грн
100+ 168.5 грн
500+ 140.56 грн
Мінімальне замовлення: 2
IXYP20N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 14-21 дні (днів)
2+287.72 грн
7+ 180.58 грн
17+ 164.83 грн
500+ 162.11 грн
1000+ 159.4 грн
Мінімальне замовлення: 2
IXYP20N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYP20N65C3D1MIXYSDescription: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
товар відсутній
IXYP20N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYP20N65C3D1MLittelfuseTrans IGBT Chip N-CH 650V 18A 50000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP20N65C3D1MIXYSIGBTs 650V/18A XPT IGBT C3 Copacked TO-220
товар відсутній
IXYP24N100A4IXYSIGBTs TO263 1KV 24A XPT
товар відсутній
IXYP24N100A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
товар відсутній
IXYP24N100C4IXYSIGBTs TO220 1KV 24A IGBT
товар відсутній
IXYP24N100C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
300+519.01 грн
Мінімальне замовлення: 300
IXYP30N120A4IXYSIGBTs TO220 1KV 30A IGBT
товар відсутній
IXYP30N120A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
товар відсутній
IXYP30N120B4IXYSIGBTs TO220 1200V 30A IGBT
товар відсутній
IXYP30N120B4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
товар відсутній
IXYP30N120C3IXYSDescription: IGBT 1200V 75A 500W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
товар відсутній
IXYP30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-220
товар відсутній
IXYP30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
IXYP30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 300 шт
товар відсутній
IXYP30N120C3IXYSIGBTs GenX3 1200V XPT IGBT
на замовлення 675 шт:
термін постачання 21-30 дні (днів)
1+544.37 грн
10+ 472.43 грн
50+ 341.26 грн
100+ 328.21 грн
250+ 313 грн
IXYP30N120C4IXYSIGBTs TO220 1200V 30A IGBT
товар відсутній
IXYP30N120C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
товар відсутній
IXYP30N65C3IXYSIGBTs TO220 650V 30A XPT
товар відсутній
IXYP30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYP30N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
товар відсутній
IXYP30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYP35N65C5IXYSIGBTs 650V, 35A, XPT Gen5 C5 IGBT in TO-220
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
1+344.03 грн
10+ 284.96 грн
50+ 234.02 грн
100+ 199.97 грн
250+ 189.1 грн
500+ 178.24 грн
1000+ 152.15 грн
IXYP35N65C5IXYSDescription: 650V, 35A, XP Gen5 C5 IGBT in TO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/122ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 96 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 326 W
товар відсутній
IXYP48N65A5IXYSDescription: 650V, 48A, XP Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/205ns
Switching Energy: 400µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 236 A
Power - Max: 326 W
товар відсутній
IXYP48N65A5IXYSIGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-220
на замовлення 400 шт:
термін постачання 329-338 дні (днів)
1+344.88 грн
10+ 285.79 грн
50+ 234.02 грн
100+ 199.97 грн
250+ 189.1 грн
500+ 152.88 грн
IXYP50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXYP50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP50N65C3IXYSDescription: IGBT 650V 130A 600W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXYP50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
IXYP50N65C3IXYSIGBTs 650V/130A XPT C3-Class TO-220
на замовлення 599 шт:
термін постачання 343-352 дні (днів)
1+510.55 грн
10+ 431.6 грн
50+ 324.59 грн
IXYP60N65A5IXYSDescription: IGBT PT 650V 134A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
1+342.5 грн
50+ 261.24 грн
100+ 223.91 грн
IXYP60N65A5IXYSIGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+389.68 грн
50+ 298.29 грн
100+ 222.43 грн
500+ 197.07 грн
1000+ 159.4 грн
IXYP60N65A5LITTELFUSEDescription: LITTELFUSE - IXYP60N65A5 - IGBT, 134 A, 1.23 V, 395 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.23
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.23
Verlustleistung Pd: 395
euEccn: NLR
Verlustleistung: 395
Bauform - Transistor: TO-220
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 650
Anzahl der Pins: 3
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650
productTraceability: No
DC-Kollektorstrom: 134
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 134
SVHC: No SVHC (17-Jan-2022)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+538.06 грн
5+ 512.05 грн
10+ 486.04 грн
50+ 412.83 грн
Мінімальне замовлення: 2
IXYP8N90C3IXYSDescription: IGBT 900V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
300+131.82 грн
Мінімальне замовлення: 300
IXYP8N90C3IXYSIGBTs XPT 900V IGBT GenX3 XPT IGBT
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+223.16 грн
10+ 184.97 грн
50+ 151.43 грн
100+ 129.69 грн
250+ 122.45 грн
500+ 115.93 грн
1000+ 105.78 грн
Мінімальне замовлення: 2
IXYP8N90C3LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP8N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 8A
товар відсутній
IXYP8N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 8A
кількість в упаковці: 1 шт
товар відсутній
IXYP8N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 8A
на замовлення 147 шт:
термін постачання 21-30 дні (днів)
2+304.79 грн
3+ 254.34 грн
5+ 202.27 грн
12+ 191.7 грн
Мінімальне замовлення: 2
IXYP8N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 8A
кількість в упаковці: 1 шт
на замовлення 147 шт:
термін постачання 14-21 дні (днів)
1+365.75 грн
3+ 316.95 грн
5+ 242.72 грн
12+ 230.04 грн
IXYP8N90C3D1IXYSDescription: IGBT 900V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYP8N90C3D1IXYSIGBTs XPT 900V IGBT GenX3 XPT IGBTs
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
1+409.12 грн
10+ 354.12 грн
50+ 260.83 грн
100+ 237.65 грн
250+ 216.64 грн
500+ 208.67 грн
1000+ 197.07 грн
IXYP8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYQ30N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-3P (3)
товар відсутній
IXYQ40N65B3D1IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYQ40N65C3D1IXYSDescription: IGBT
товар відсутній
IXYQ40N65C3D1IXYSIGBT Transistors
товар відсутній
IXYR100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
товар відсутній
IXYR100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 104A 484000mW 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXYR100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYR100N120C3IXYSDescription: IGBT 1200V 104A 484W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 484 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2232.9 грн
IXYR100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
кількість в упаковці: 1 шт
товар відсутній
IXYR100N65A3V1IXYSDescription: IGBT
Packaging: Tube
Part Status: Active
товар відсутній
IXYR100N65A3V1IXYSIGBT Modules Disc IGBT PT-Low Frequency ISOPLUS247
товар відсутній
IXYR50N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 56A 290000mW 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXYR50N120C3D1IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYR50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 290W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: PLUS247™
товар відсутній
IXYR50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 290W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: PLUS247™
кількість в упаковці: 1 шт
товар відсутній
IXYR50N120C3D1IXYSDescription: IGBT 1200V 56A 290W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
товар відсутній
IXYT120N65A5HVIXYSDescription: 650V, 120A, XP Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 75A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/390ns
Switching Energy: 2.46mJ (on), 3.55mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
товар відсутній
IXYT120N65A5HVIXYSIGBTs 650V, 120A, XPT Gen5 A5 IGBT in TO-268HV
на замовлення 400 шт:
термін постачання 343-352 дні (днів)
1+902.77 грн
10+ 783.22 грн
30+ 662.95 грн
60+ 625.27 грн
120+ 589.05 грн
270+ 512.25 грн
IXYT12N250CV1HVIXYSDescription: IGBT 2500V 28A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYT12N250CV1HVIXYSIGBTs TO268 2500V 12A DIODE
товар відсутній
IXYT20N120C3D1HVIXYSIGBTs TO268 1200V 17A DIODE
товар відсутній
IXYT20N120C3D1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXYT20N120C3D1HVLittelfuseTrans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(2+Tab) D3PAK
товар відсутній
IXYT20N120C3D1HVIXYSDescription: IGBT 1200V 36A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
товар відсутній
IXYT20N120C3D1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
товар відсутній
IXYT25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(2+Tab) TO-268HV
товар відсутній
IXYT25N250CHVIXYSDescription: IGBT 2500V 95A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
1+2515.05 грн
30+ 2007.89 грн
120+ 1882.41 грн
IXYT25N250CHVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT
на замовлення 240 шт:
термін постачання 357-366 дні (днів)
1+3169.83 грн
10+ 2881.25 грн
30+ 2392.41 грн
120+ 2138.82 грн
IXYT25N250CHVIXYSIXYT25N250CHV SMD IGBT transistors
товар відсутній
IXYT30N450HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 412 шт:
термін постачання 350-359 дні (днів)
1+3613.61 грн
10+ 3270.36 грн
IXYT30N450HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
кількість в упаковці: 300 шт
товар відсутній
IXYT30N450HVLittelfuseHigh Voltage XPTTMIGBT
товар відсутній
IXYT30N450HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
товар відсутній
IXYT30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYT30N450HVIXYSDescription: IGBT 4500V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
1+3225.92 грн
30+ 2603.49 грн
120+ 2429.92 грн
IXYT30N65C3H1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYT30N65C3H1HVIXYSDescription: IGBT 650V 60A 270W TO268HV
товар відсутній
IXYT30N65C3H1HVIXYSIGBTs 650V/60A XPT Copacked TO-268HV
товар відсутній
IXYT30N65C3H1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYT40N120A4HVIXYSDescription: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
товар відсутній
IXYT40N120A4HVIXYSIGBTs TO268 1200V 40A XPT
товар відсутній
IXYT40N120A4HVLittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYT40N120A4HV-TRLLittelfuse Discrete IGBT XPT Gen 4 1200V TO268HV
товар відсутній
IXYT55N120A4HVIXYSIGBTs TO268 1200V 55A XPT
на замовлення 475 шт:
термін постачання 21-30 дні (днів)
1+1106.48 грн
10+ 998.19 грн
30+ 768.01 грн
60+ 767.28 грн
120+ 722.36 грн
270+ 699.9 грн
510+ 630.34 грн
IXYT55N120A4HVIXYSDescription: IGBT PT 1200V 175A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
1+991.44 грн
30+ 772.76 грн
120+ 727.29 грн
IXYT80N90C3IXYSIGBTs TO268 900V 80A XPT
товар відсутній
IXYT80N90C3IXYSDescription: IGBT 900V 165A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
товар відсутній
IXYT80N90C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Turn-on time: 134ns
Turn-off time: 201ns
кількість в упаковці: 1 шт
товар відсутній
IXYT80N90C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Turn-on time: 134ns
Turn-off time: 201ns
товар відсутній
IXYT85N120A4HVLittelfuseDiscrete IGBT XPT Gen 4 1200V TO268HV
товар відсутній
IXYT85N120A4HVIXYSIGBTs TO268 1200V 85A XPT
на замовлення 615 шт:
термін постачання 21-30 дні (днів)
1+2023.62 грн
10+ 1772.24 грн
30+ 1370.09 грн
60+ 1349.81 грн
120+ 1303.44 грн
270+ 1270.83 грн
510+ 1156.36 грн
IXYT85N120A4HVIXYSDescription: IGBT PT 1200V 300A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 279 шт:
термін постачання 21-31 дні (днів)
1+1812.03 грн
30+ 1446.35 грн
120+ 1355.95 грн
IXYT90N65A5HVIXYSIGBTs 650V, 90A, XPT Gen5 A5 IGBT in TO-268HV
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+814.86 грн
10+ 689.07 грн
30+ 543.4 грн
120+ 499.2 грн
270+ 469.5 грн
510+ 440.52 грн
1020+ 396.32 грн
IXYT90N65A5HVIXYSDescription: 650V, 90A, XP Gen5 A5 IGBT in TO
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/436ns
Switching Energy: 1mJ (on), 3mJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 650 W
товар відсутній
IXYX100N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
товар відсутній
IXYX100N120B3IXYSDescription: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/153ns
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 1150 W
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
1+1785.38 грн
10+ 1527.78 грн
100+ 1336.23 грн
500+ 1070.08 грн
IXYX100N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
товар відсутній
IXYX100N120B3LittelfuseTrans IGBT Chip N-CH 1200V 225A 1150000mW
товар відсутній
IXYX100N120B3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYX100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) PLUS 247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1234.97 грн
IXYX100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+2027.85 грн
10+ 1808.07 грн
30+ 1509.93 грн
120+ 1329.52 грн
510+ 1249.1 грн
IXYX100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYX100N120C3IXYSDescription: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
товар відсутній
IXYX100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYX100N65B3D1IXYSIGBTs Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYX100N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 460A
Turn-on time: 65ns
Turn-off time: 358ns
Type of transistor: IGBT
Gate charge: 168nC
кількість в упаковці: 1 шт
товар відсутній
IXYX100N65B3D1IXYSDescription: IGBT PT 650V 225A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 1.37mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
товар відсутній
IXYX100N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 460A
Turn-on time: 65ns
Turn-off time: 358ns
Type of transistor: IGBT
Gate charge: 168nC
товар відсутній
IXYX110N120A4LITTELFUSEDescription: LITTELFUSE - IXYX110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.45
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45
Verlustleistung Pd: 1.36
euEccn: NLR
Verlustleistung: 1.36
Bauform - Transistor: PLUS247
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
DC-Kollektorstrom: 375
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 375
SVHC: No SVHC (17-Jan-2022)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3053.61 грн
5+ 2934.94 грн
10+ 2816.28 грн
IXYX110N120A4IXYSIGBT Transistors IGBT XPT-GEN4 1200V 110A
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+2984.72 грн
10+ 2940.41 грн
IXYX110N120A4IXYSDescription: IGBT 1200V 110A GNX4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+2035.4 грн
IXYX110N120B4IXYSIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
на замовлення 336 шт:
термін постачання 21-30 дні (днів)
1+1609.43 грн
10+ 1488.95 грн
30+ 1143.31 грн
60+ 1107.09 грн
120+ 1093.32 грн
510+ 920.16 грн
IXYX110N120B4IXYSDescription: IGBT 1200V 110A GEN4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
товар відсутній
IXYX110N120B4LittelfuseDisc IGBT XPT Gen4 1200V 110A PLUS247
товар відсутній
IXYX110N120C4LITTELFUSEDescription: LITTELFUSE - IXYX110N120C4 - IGBT, 310 A, 1.9 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.9V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.36kW
Bauform - Transistor: PLUS247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 310A
SVHC: Boric acid (14-Jun-2023)
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+1653.19 грн
5+ 1511.77 грн
10+ 1370.34 грн
50+ 1232.46 грн
100+ 1100.73 грн
250+ 1078.44 грн
IXYX110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
товар відсутній
IXYX110N120C4LittelfuseXPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
товар відсутній
IXYX110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
1+1623.8 грн
10+ 1411.46 грн
30+ 1194.03 грн
60+ 1126.65 грн
120+ 1060.72 грн
270+ 1013.62 грн
510+ 945.52 грн
IXYX120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2010.81 грн
2+ 1765.3 грн
IXYX120N120B3IXYSIGBTs PLUS247 1200V 120A GENX3
товар відсутній
IXYX120N120B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
товар відсутній
IXYX120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
1+2412.97 грн
2+ 2199.83 грн
IXYX120N120B3LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) PLUS 247
товар відсутній
IXYX120N120C3IXYSIGBTs PLUS247 1200V 120A GENX3
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2994.01 грн
10+ 2744.6 грн
30+ 2214.9 грн
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+2110.56 грн
IXYX120N120C3IXYSDescription: IGBT 1200V 240A 1500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
1+2681.21 грн
30+ 2163.81 грн
120+ 2019.55 грн
IXYX120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)
1+2411.02 грн
2+ 2198.89 грн
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
IXYX120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+2009.19 грн
2+ 1764.54 грн
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
товар відсутній
IXYX140N120A4LITTELFUSEDescription: LITTELFUSE - IXYX140N120A4 - IGBT, 480 A, 1.34 V, 1.5 kW, 1.2 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.34V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5kW
Bauform - Transistor: PLUS247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 480A
SVHC: Boric acid (14-Jun-2023)
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
1+3879.39 грн
5+ 3564.84 грн
10+ 3250.3 грн
50+ 2817.38 грн
IXYX140N120A4IXYSIGBTs PLUS247 1200V 140A GENX4
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
1+4164.74 грн
30+ 3440.34 грн
60+ 2877.85 грн
120+ 2737.29 грн
IXYX140N120A4IXYSDescription: IGBT PT 1200V 480A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
товар відсутній
IXYX140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
кількість в упаковці: 1 шт
товар відсутній
IXYX140N90C3LITTELFUSEDescription: LITTELFUSE - IXYX140N90C3 - IGBT, 310 A, 2.15 V, 1.63 kW, 900 V, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.15V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.63kW
Bauform - Transistor: PLUS247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 900V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 310A
SVHC: Boric acid (14-Jun-2023)
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+2071.77 грн
5+ 1894.58 грн
10+ 1717.4 грн
IXYX140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
товар відсутній
IXYX140N90C3IXYSIGBTs PLUS247 900V 140A GENX3
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+2096.32 грн
10+ 1952.22 грн
30+ 1489.64 грн
60+ 1466.46 грн
120+ 1438.2 грн
IXYX140N90C3IXYSDescription: IGBT 900V 310A 1630W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)
1+1949.19 грн
30+ 1556.04 грн
120+ 1458.78 грн
510+ 1168.23 грн
IXYX140N90C3LittelfuseTrans IGBT Chip N-CH 900V 310A 1630000mW 3-Pin(3+Tab) PLUS 247
товар відсутній
IXYX180N65A5IXYSDescription: 650V, 180A, XP Gen5 A5 IGBT in P
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
товар відсутній
IXYX180N65A5IXYSIGBTs 650V, 180A, XPT Gen5 A5 IGBT in PLUS247
на замовлення 400 шт:
термін постачання 343-352 дні (днів)
1+1492.78 грн
10+ 1296.48 грн
30+ 1096.94 грн
60+ 1035.36 грн
120+ 873.06 грн
IXYX200N65B3IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYX200N65B3IXYSIXYX200N65B3 THT IGBT transistors
товар відсутній
IXYX200N65B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
товар відсутній
IXYX220N65A5IXYSIGBTs 650V, 220A, XPT Gen5 A5 IGBT in PLUS247
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+1859.64 грн
10+ 1629.77 грн
30+ 1322.27 грн
60+ 1280.25 грн
120+ 1238.95 грн
270+ 1156.36 грн
510+ 1063.61 грн
IXYX220N65A5IXYSDescription: 650V, 220A, XPT Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/540ns
Switching Energy: 1.3mJ (on), 7.95mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.18 kA
Power - Max: 1.61 kW
товар відсутній
IXYX25N250CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX25N250CV1IXYSIXYX25N250CV1 THT IGBT transistors
товар відсутній
IXYX25N250CV1IXYSIGBT Transistors 2500V/95A , HV XPT IGBT Copacked
товар відсутній
IXYX25N250CV1HVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT Copacked
на замовлення 712 шт:
термін постачання 21-30 дні (днів)
1+3549.37 грн
10+ 3265.36 грн
30+ 2776.41 грн
120+ 2464.14 грн
510+ 2369.95 грн
1020+ 2234.46 грн
IXYX25N250CV1HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX25N250CV1HVIXYSIXYX25N250CV1HV THT IGBT transistors
товар відсутній
IXYX25N250CV1HVIXYSDescription: IGBT 2500V 95A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
1+2817.58 грн
30+ 2273.93 грн
IXYX300N65A3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
товар відсутній
IXYX300N65A3IXYSIGBT Transistors IGBT DISC XPT
товар відсутній
IXYX30N170CV1IXYSDescription: IGBT 1700V 108A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+1764.22 грн
30+ 1408.49 грн
IXYX30N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX30N170CV1IXYSIXYX30N170CV1 THT IGBT transistors
товар відсутній
IXYX30N170CV1IXYSIGBTs 1700V/108A High Voltage XPT IGBT
на замовлення 572 шт:
термін постачання 21-30 дні (днів)
1+1885.84 грн
10+ 1604.77 грн
30+ 1341.84 грн
60+ 1312.13 грн
120+ 1207.8 грн
270+ 1175.92 грн
510+ 1151.28 грн
IXYX40N250CHVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
1+4171.5 грн
10+ 3663.64 грн
120+ 2796.7 грн
270+ 2693.81 грн
IXYX40N250CHVIXYSDescription: IGBT 2.5KV 70A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1500 W
на замовлення 459 шт:
термін постачання 21-31 дні (днів)
1+2746.26 грн
30+ 2215.89 грн
120+ 2068.17 грн
IXYX40N250CHVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
товар відсутній
IXYX40N250CHVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYX40N450HVIXYSDescription: IGBT 4500V 95A TO247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
1+4827.12 грн
30+ 4067.5 грн
120+ 3776.98 грн
IXYX40N450HVIXYSIXYX40N450HV THT IGBT transistors
товар відсутній
IXYX40N450HVIXYSIGBT Transistors High Voltage XPT IGBT
на замовлення 1170 шт:
термін постачання 392-401 дні (днів)
1+5124.14 грн
10+ 4325.21 грн
IXYX40N450HVLITTELFUSEDescription: LITTELFUSE - IXYX40N450HV - TRANSISTOR, IGBT/4.5KV/95A/TO-247PLUS-HV
tariffCode: 85412900
Transistormontage: Through Hole
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 3.2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 660W
Bauform - Transistor: TO-247PLUS-HV
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Series
Kollektor-Emitter-Spannung, max.: 4.5kV
productTraceability: No
Betriebstemperatur, max.: 150°C
directShipCharge: 25
Kontinuierlicher Kollektorstrom: 95A
SVHC: No SVHC (17-Dec-2014)
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+5487.88 грн
5+ 5315.57 грн
10+ 5144.88 грн
25+ 4617.39 грн
IXYX40N450HVLittelfuseTrans IGBT Chip N-CH 4500V 95A 660mW 3-Pin(3+Tab) TO-247PLUS-HV
товар відсутній
IXYX50N170CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Turn-on time: 62ns
Turn-off time: 396ns
Type of transistor: IGBT
Power dissipation: 1.5kW
Features of semiconductor devices: high voltage
Gate charge: 260nC
Technology: XPT™
Kind of package: tube
Mounting: THT
Case: PLUS247™
кількість в упаковці: 1 шт
товар відсутній
IXYX50N170CIXYSIGBT Transistors IGBT DISCRETE
на замовлення 682 шт:
термін постачання 21-30 дні (днів)
1+2204.51 грн
10+ 1969.72 грн
120+ 1517.17 грн
IXYX50N170CLITTELFUSEDescription: LITTELFUSE - IXYX50N170C - IGBT, 178 A, 2.8 V, 1.5 kW, 1.7 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.8
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5
Bauform - Transistor: PLUS247
Anzahl der Pins: 3
Produktpalette: ARCA IEC Series
Kollektor-Emitter-Spannung, max.: 1.7
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 178
SVHC: No SVHC (17-Jan-2022)
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+2256.27 грн
5+ 2168.49 грн
10+ 2080.71 грн
IXYX50N170CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Turn-on time: 62ns
Turn-off time: 396ns
Type of transistor: IGBT
Power dissipation: 1.5kW
Features of semiconductor devices: high voltage
Gate charge: 260nC
Technology: XPT™
Kind of package: tube
Mounting: THT
Case: PLUS247™
товар відсутній
IXYX50N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX50N170CIXYSDescription: IGBT 1700V 178A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 178 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 1500 W
на замовлення 601 шт:
термін постачання 21-31 дні (днів)
1+2197.64 грн
10+ 1880.39 грн
100+ 1644.68 грн
500+ 1317.1 грн
IXYY8N90C3LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) DPAK
товар відсутній
IXYY8N90C3IXYSDescription: IGBT 900V 20A 125W C3 TO-252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
на замовлення 2557 шт:
термін постачання 21-31 дні (днів)
2+224.15 грн
70+ 171.07 грн
140+ 146.63 грн
560+ 122.32 грн
1050+ 104.73 грн
2030+ 98.62 грн
Мінімальне замовлення: 2
IXYY8N90C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO252
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
кількість в упаковці: 1 шт
товар відсутній
IXYY8N90C3IXYSIGBTs 900V 8A 2.5V XPT IGBTs GenX3
на замовлення 339 шт:
термін постачання 21-30 дні (днів)
2+250.21 грн
10+ 224.97 грн
25+ 170.27 грн
70+ 145.63 грн
280+ 137.66 грн
560+ 122.45 грн
1050+ 106.51 грн
Мінімальне замовлення: 2
IXYY8N90C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO252
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
товар відсутній
IXYY8N90C3-TRLIXYSDiscrete Semiconductor Modules IXYY8N90C3 TRL
товар відсутній
IXYY8N90C3-TRLLittelfuseTrans IGBT Chip N-CH 900V 20A 125W 3-Pin(2+Tab) DPAK T/R
товар відсутній
IXYY8N90C3-TRLIXYSDescription: IXYY8N90C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній