IXYP10N65C3D1 IXYS
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Description: IGBT PT 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
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Технічний опис IXYP10N65C3D1 IXYS
Description: IGBT PT 650V 30A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 170 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/77ns, Switching Energy: 240µJ (on), 110µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 18 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 54 A, Power - Max: 160 W.
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IXYP10N65C3D1 | Виробник : IXYS |
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