IXYH40N120B3 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
кількість в упаковці: 1 шт
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Технічний опис IXYH40N120B3 IXYS
Description: IGBT 1200V 96A 577W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 22ns/177ns, Switching Energy: 2.7mJ (on), 1.6mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 87 nC, Current - Collector (Ic) (Max): 96 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 577 W.
Інші пропозиції IXYH40N120B3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXYH40N120B3 | Виробник : IXYS |
Description: IGBT 1200V 96A 577W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 22ns/177ns Switching Energy: 2.7mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 87 nC Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 577 W |
товар відсутній |
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IXYH40N120B3 | Виробник : IXYS | IGBTs TO247 1200V 40A GENX3 |
товар відсутній |
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IXYH40N120B3 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 577W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 84ns Turn-off time: 411ns |
товар відсутній |