IXYP10N65C3 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
кількість в упаковці: 1 шт
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Технічний опис IXYP10N65C3 IXYS
Description: IGBT 650V 30A 160W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/77ns, Switching Energy: 240µJ (on), 110µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 18 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 54 A, Power - Max: 160 W.
Інші пропозиції IXYP10N65C3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXYP10N65C3 | Виробник : IXYS |
Description: IGBT 650V 30A 160W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 20ns/77ns Switching Energy: 240µJ (on), 110µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 54 A Power - Max: 160 W |
товар відсутній |
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IXYP10N65C3 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 160W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 54A Mounting: THT Gate charge: 18nC Kind of package: tube Turn-on time: 44ns Turn-off time: 128ns |
товар відсутній |