IXYH75N65C3D1 IXYS
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Description: IGBT PT 650V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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Технічний опис IXYH75N65C3D1 IXYS
Description: IGBT PT 650V 175A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247 (IXYH), IGBT Type: PT, Td (on/off) @ 25°C: 26ns/93ns, Switching Energy: 2mJ (on), 950µJ (off), Test Condition: 400V, 60A, 3Ohm, 15V, Gate Charge: 122 nC, Part Status: Active, Current - Collector (Ic) (Max): 175 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 750 W.
Інші пропозиції IXYH75N65C3D1
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IXYH75N65C3D1 | Виробник : IXYS |
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