![IXYN150N60B3 IXYN150N60B3](https://ce8dc832c.cloudimg.io/v7/_cdn_/35/5B/A0/00/0/701779_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=1b65a09142ebd0f3790e25093d6401764e2cb955)
IXYN150N60B3 IXYS
![IXYN150N60B3.pdf](/images/adobe-acrobat.png)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXYN150N60B3 IXYS
Description: IGBT, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A, Supplier Device Package: SOT-227B, Td (on/off) @ 25°C: 27ns/167ns, Switching Energy: 4.2mJ (on), 2.6mJ (off), Test Condition: 400V, 75A, 2Ohm, 15V, Gate Charge: 260 nC, Current - Collector (Ic) (Max): 250 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 750 A, Power - Max: 830 W.
Інші пропозиції IXYN150N60B3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IXYN150N60B3 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 27ns/167ns Switching Energy: 4.2mJ (on), 2.6mJ (off) Test Condition: 400V, 75A, 2Ohm, 15V Gate Charge: 260 nC Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 750 A Power - Max: 830 W |
товар відсутній |
|
![]() |
IXYN150N60B3 | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXYN150N60B3 | Виробник : IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B Technology: GenX3™; XPT™ Collector current: 140A Power dissipation: 830W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 750A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |