IXYN75N65C3D1 IXYS
Виробник: IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
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Технічний опис IXYN75N65C3D1 IXYS
Description: IGBT 650V 150A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: SOT-227B, Td (on/off) @ 25°C: 26ns/93ns, Switching Energy: 2mJ (on), 950µJ (off), Test Condition: 400V, 60A, 3Ohm, 15V, Gate Charge: 122 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 600 W.
Інші пропозиції IXYN75N65C3D1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IXYN75N65C3D1 | Виробник : IXYS |
Description: IGBT 650V 150A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 26ns/93ns Switching Energy: 2mJ (on), 950µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 122 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 600 W |
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IXYN75N65C3D1 | Виробник : IXYS |
IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini |
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IXYN75N65C3D1 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W Technology: GenX3™; XPT™ Collector current: 75A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |