APTGT150DA120G MICROCHIP (MICROSEMI)
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Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 8 шт
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Технічний опис APTGT150DA120G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C, Mechanical mounting: screw, Electrical mounting: FASTON connectors; screw, Application: motors, Case: SP6C, Type of module: IGBT, Technology: Field Stop; Trench, Topology: boost chopper, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 350A, кількість в упаковці: 8 шт.
Інші пропозиції APTGT150DA120G
Фото | Назва | Виробник | Інформація |
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APTGT150DA120G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
товар відсутній |
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APTGT150DA120G | Виробник : Microchip / Microsemi |
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товар відсутній |
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APTGT150DA120G | Виробник : Microchip Technology |
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товар відсутній |
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APTGT150DA120G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
товар відсутній |