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APTGT100TL60T3G Microchip Technology
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
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Технічний опис APTGT100TL60T3G Microchip Technology
Description: IGBT MODULE 600V 150A 340W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Інші пропозиції APTGT100TL60T3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT100TL60T3G | Виробник : Microsemi |
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на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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APTGT100TL60T3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3 Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Power dissipation: 340W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3 Type of module: IGBT Technology: Field Stop Gate-emitter voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Collector current: 100A кількість в упаковці: 1 шт |
товар відсутній |
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APTGT100TL60T3G | Виробник : MICROSEMI |
![]() кількість в упаковці: 1 шт |
товар відсутній |
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![]() |
APTGT100TL60T3G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
товар відсутній |
|
APTGT100TL60T3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3 Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Power dissipation: 340W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3 Type of module: IGBT Technology: Field Stop Gate-emitter voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Collector current: 100A |
товар відсутній |