APTGT150A120G MICROCHIP (MICROSEMI)
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Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 6 шт
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Технічний опис APTGT150A120G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Mechanical mounting: screw, Electrical mounting: FASTON connectors; screw, Application: motors, Case: SP6C, Type of module: IGBT, Technology: Field Stop; Trench, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 350A, кількість в упаковці: 6 шт.
Інші пропозиції APTGT150A120G
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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APTGT150A120G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
товар відсутній |
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APTGT150A120G | Виробник : Microsemi |
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APTGT150A120G | Виробник : Microchip Technology |
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товар відсутній |
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APTGT150A120G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
товар відсутній |