Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4200) > Сторінка 63 з 70
| Фото | Назва | Виробник | Інформація |
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MSC180SMA120B | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 127W Case: TO247-3 On-state resistance: 0.225Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 36 шт: термін постачання 14-21 дні (днів) |
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MSC180SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 125W Case: D3PAK On-state resistance: 0.225Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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MSC180SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 125W Case: D3PAK On-state resistance: 0.225Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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| MSC2X100SDA070J | MICROCHIP (MICROSEMI) |
MSC2X100SDA070J Diode modules |
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| MSC2X100SDA120J | MICROCHIP (MICROSEMI) |
MSC2X100SDA120J Diode modules |
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| MSC2X101SDA070J | MICROCHIP (MICROSEMI) |
MSC2X101SDA070J Diode modules |
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| MSC2X101SDA120J | MICROCHIP (MICROSEMI) |
MSC2X101SDA120J Diode modules |
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| MSC2X30SDA070J | MICROCHIP (MICROSEMI) | MSC2X30SDA070J Diode modules |
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| MSC2X30SDA120J | MICROCHIP (MICROSEMI) | MSC2X30SDA120J Diode modules |
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MSC2X30SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 30A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC |
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MSC2X30SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 30A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC кількість в упаковці: 1 шт |
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| MSC2X31SDA070J | MICROCHIP (MICROSEMI) | MSC2X31SDA070J Diode modules |
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| MSC2X31SDA120J | MICROCHIP (MICROSEMI) | MSC2X31SDA120J Diode modules |
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MSC2X31SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 30A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC |
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MSC2X31SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 30A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC кількість в упаковці: 1 шт |
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| MSC2X50SDA070J | MICROCHIP (MICROSEMI) |
MSC2X50SDA070J Diode modules |
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| MSC2X50SDA120J | MICROCHIP (MICROSEMI) |
MSC2X50SDA120J Diode modules |
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MSC2X50SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 50A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC |
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MSC2X50SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 50A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC кількість в упаковці: 1 шт |
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| MSC2X51SDA070J | MICROCHIP (MICROSEMI) |
MSC2X51SDA070J Diode modules |
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| MSC2X51SDA120J | MICROCHIP (MICROSEMI) |
MSC2X51SDA120J Diode modules |
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MSC2X51SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 50A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC |
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MSC2X51SDA170J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 1.7kV Load current: 50A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC кількість в упаковці: 1 шт |
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MSC360SMA120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 28A Power dissipation: 78W Case: TO247-3 On-state resistance: 0.45Ω Mounting: THT Gate charge: 21nC Kind of channel: enhanced |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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MSC360SMA120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 28A Power dissipation: 78W Case: TO247-3 On-state resistance: 0.45Ω Mounting: THT Gate charge: 21nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 60 шт: термін постачання 14-21 дні (днів) |
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MSC360SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 27A Power dissipation: 71W Case: D3PAK On-state resistance: 0.45Ω Mounting: SMD Gate charge: 21nC Kind of channel: enhanced |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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MSC360SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 27A Power dissipation: 71W Case: D3PAK On-state resistance: 0.45Ω Mounting: SMD Gate charge: 21nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 67 шт: термін постачання 14-21 дні (днів) |
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| MSC400SMA330B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W Case: TO247-4 Drain-source voltage: 3.3kV Drain current: 7A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 131W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 37nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 27A Mounting: THT |
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| MSC400SMA330B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W Case: TO247-4 Drain-source voltage: 3.3kV Drain current: 7A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 131W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 37nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 27A Mounting: THT кількість в упаковці: 1 шт |
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| MSC40SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC40SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC40SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC40SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC50DC120HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2.1V |
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| MSC50DC120HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2.1V кількість в упаковці: 1 шт |
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| MSC50DC170HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.7kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V |
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| MSC50DC170HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.7kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V кількість в упаковці: 1 шт |
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| MSC50DC70HJ | MICROCHIP (MICROSEMI) |
MSC50DC70HJ Sing. ph. diode bridge rectif. - others |
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| MSC70SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw |
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| MSC70SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MSC70SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw |
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| MSC70SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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MSC750SMA170B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 12A Power dissipation: 68W Case: TO247-3 On-state resistance: 940mΩ Mounting: THT Gate charge: 18nC Kind of channel: enhanced |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MSC750SMA170B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 12A Power dissipation: 68W Case: TO247-3 On-state resistance: 940mΩ Mounting: THT Gate charge: 18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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MSC750SMA170B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Case: TO247-4 Mounting: THT Drain-source voltage: 1.7kV Drain current: 5A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 11nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A |
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MSC750SMA170B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Case: TO247-4 Mounting: THT Drain-source voltage: 1.7kV Drain current: 5A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 11nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A кількість в упаковці: 1 шт |
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MSC750SMA170S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK Case: D3PAK Mounting: SMD Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Gate charge: 18nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A |
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MSC750SMA170S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK Case: D3PAK Mounting: SMD Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Gate charge: 18nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A кількість в упаковці: 1 шт |
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| MSCC-1588-DB | MICROCHIP (MICROSEMI) |
Category: Microchip development kits Description: Dev.kit: Microchip Type of development kit: Microchip |
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| MSCC-1588-DB | MICROCHIP (MICROSEMI) |
Category: Microchip development kits Description: Dev.kit: Microchip Type of development kit: Microchip кількість в упаковці: 1 шт |
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| MSCC60AM23C4AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 600V; 81A; SP4; SiC; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: Vienna Rectifier Case: SP4 Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 600V Drain current: 81A On-state resistance: 23mΩ |
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| MSCC60AM23C4AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 600V; 81A; SP4; SiC; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: Vienna Rectifier Case: SP4 Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 600V Drain current: 81A On-state resistance: 23mΩ кількість в упаковці: 1 шт |
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| MSCC60VRM45TAPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 600V; 40A; SP6P; SiC; screw Technology: SiC Drain-source voltage: 600V Drain current: 40A Case: SP6P On-state resistance: 45mΩ Semiconductor structure: SiC diode/tiristor/transistor Electrical mounting: Press-in PCB Topology: Vienna Rectifier Mechanical mounting: screw Type of module: MOSFET transistor |
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| MSCC60VRM45TAPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 600V; 40A; SP6P; SiC; screw Technology: SiC Drain-source voltage: 600V Drain current: 40A Case: SP6P On-state resistance: 45mΩ Semiconductor structure: SiC diode/tiristor/transistor Electrical mounting: Press-in PCB Topology: Vienna Rectifier Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| MSCC60VRM99CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 600V; 19A; SP3F; SiC; screw Technology: SiC Drain-source voltage: 600V Drain current: 19A Case: SP3F On-state resistance: 99mΩ Semiconductor structure: SiC diode/tiristor/transistor Electrical mounting: Press-in PCB Topology: Vienna Rectifier Mechanical mounting: screw Type of module: MOSFET transistor |
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| MSCC60VRM99CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 600V; 19A; SP3F; SiC; screw Technology: SiC Drain-source voltage: 600V Drain current: 19A Case: SP3F On-state resistance: 99mΩ Semiconductor structure: SiC diode/tiristor/transistor Electrical mounting: Press-in PCB Topology: Vienna Rectifier Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| MSCDC100A120D1PAG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.2kV; 100A; D1P; screw; screw; SiC Max. off-state voltage: 1.2kV Semiconductor structure: double series Case: D1P Features of semiconductor devices: Schottky Technology: SiC Type of module: diode Electrical mounting: screw Load current: 100A Mechanical mounting: screw |
товар відсутній |
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| MSCDC100A120D1PAG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.2kV; 100A; D1P; screw; screw; SiC Max. off-state voltage: 1.2kV Semiconductor structure: double series Case: D1P Features of semiconductor devices: Schottky Technology: SiC Type of module: diode Electrical mounting: screw Load current: 100A Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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| MSCDC100A170D1PAG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 100A; D1P; screw; screw; SiC Max. off-state voltage: 1.7kV Semiconductor structure: double series Case: D1P Features of semiconductor devices: Schottky Technology: SiC Type of module: diode Electrical mounting: screw Load current: 100A Mechanical mounting: screw |
товар відсутній |
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| MSCDC100A170D1PAG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 100A; D1P; screw; screw; SiC Max. off-state voltage: 1.7kV Semiconductor structure: double series Case: D1P Features of semiconductor devices: Schottky Technology: SiC Type of module: diode Electrical mounting: screw Load current: 100A Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
| MSC180SMA120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 127W
Case: TO247-3
On-state resistance: 0.225Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 127W
Case: TO247-3
On-state resistance: 0.225Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 957.68 грн |
| 2+ | 641.49 грн |
| 5+ | 583.56 грн |
| MSC180SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 879.57 грн |
| 2+ | 569.47 грн |
| 5+ | 538.75 грн |
| MSC180SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1055.48 грн |
| 2+ | 709.65 грн |
| 5+ | 646.5 грн |
| MSC2X30SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| MSC2X30SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSC2X31SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| MSC2X31SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 30Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 30A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSC2X50SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| MSC2X50SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSC2X51SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| MSC2X51SDA170J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; 50Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 1.7kV
Load current: 50A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSC360SMA120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 574.54 грн |
| 3+ | 406.12 грн |
| 6+ | 383.64 грн |
| MSC360SMA120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 689.45 грн |
| 3+ | 506.09 грн |
| 6+ | 460.37 грн |
| MSC360SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 548.72 грн |
| 3+ | 490.8 грн |
| 5+ | 486.3 грн |
| 10+ | 468.32 грн |
| 25+ | 467.57 грн |
| MSC360SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 658.47 грн |
| 3+ | 611.61 грн |
| 5+ | 583.56 грн |
| 10+ | 561.98 грн |
| 25+ | 561.08 грн |
| MSC400SMA330B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
товар відсутній
| MSC400SMA330B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| MSC40SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC40SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC40SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC40SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC50DC120HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
товар відсутній
| MSC50DC120HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
| MSC50DC170HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
товар відсутній
| MSC50DC170HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
| MSC50DC70HJ |
|
Виробник: MICROCHIP (MICROSEMI)
MSC50DC70HJ Sing. ph. diode bridge rectif. - others
MSC50DC70HJ Sing. ph. diode bridge rectif. - others
товар відсутній
| MSC70SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MSC70SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSC70SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MSC70SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSC750SMA170B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 12A
Power dissipation: 68W
Case: TO247-3
On-state resistance: 940mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 12A
Power dissipation: 68W
Case: TO247-3
On-state resistance: 940mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 373.62 грн |
| 3+ | 324.45 грн |
| MSC750SMA170B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 12A
Power dissipation: 68W
Case: TO247-3
On-state resistance: 940mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 12A
Power dissipation: 68W
Case: TO247-3
On-state resistance: 940mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.34 грн |
| 3+ | 404.31 грн |
| 8+ | 367.76 грн |
| 90+ | 354.27 грн |
| MSC750SMA170B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
товар відсутній
| MSC750SMA170B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
кількість в упаковці: 1 шт
товар відсутній
| MSC750SMA170S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
товар відсутній
| MSC750SMA170S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
кількість в упаковці: 1 шт
товар відсутній
| MSCC-1588-DB |
Виробник: MICROCHIP (MICROSEMI)
Category: Microchip development kits
Description: Dev.kit: Microchip
Type of development kit: Microchip
Category: Microchip development kits
Description: Dev.kit: Microchip
Type of development kit: Microchip
товар відсутній
| MSCC-1588-DB |
Виробник: MICROCHIP (MICROSEMI)
Category: Microchip development kits
Description: Dev.kit: Microchip
Type of development kit: Microchip
кількість в упаковці: 1 шт
Category: Microchip development kits
Description: Dev.kit: Microchip
Type of development kit: Microchip
кількість в упаковці: 1 шт
товар відсутній
| MSCC60AM23C4AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 81A; SP4; SiC; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Case: SP4
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 600V
Drain current: 81A
On-state resistance: 23mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 81A; SP4; SiC; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Case: SP4
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 600V
Drain current: 81A
On-state resistance: 23mΩ
товар відсутній
| MSCC60AM23C4AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 81A; SP4; SiC; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Case: SP4
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 600V
Drain current: 81A
On-state resistance: 23mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 81A; SP4; SiC; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Case: SP4
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 600V
Drain current: 81A
On-state resistance: 23mΩ
кількість в упаковці: 1 шт
товар відсутній
| MSCC60VRM45TAPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 40A; SP6P; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 40A
Case: SP6P
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 40A; SP6P; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 40A
Case: SP6P
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| MSCC60VRM45TAPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 40A; SP6P; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 40A
Case: SP6P
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 40A; SP6P; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 40A
Case: SP6P
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| MSCC60VRM99CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 19A; SP3F; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 19A
Case: SP3F
On-state resistance: 99mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 19A; SP3F; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 19A
Case: SP3F
On-state resistance: 99mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| MSCC60VRM99CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 19A; SP3F; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 19A
Case: SP3F
On-state resistance: 99mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 600V; 19A; SP3F; SiC; screw
Technology: SiC
Drain-source voltage: 600V
Drain current: 19A
Case: SP3F
On-state resistance: 99mΩ
Semiconductor structure: SiC diode/tiristor/transistor
Electrical mounting: Press-in PCB
Topology: Vienna Rectifier
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| MSCDC100A120D1PAG |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
товар відсутній
| MSCDC100A120D1PAG |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSCDC100A170D1PAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.7kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.7kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
товар відсутній
| MSCDC100A170D1PAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.7kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 100A; D1P; screw; screw; SiC
Max. off-state voltage: 1.7kV
Semiconductor structure: double series
Case: D1P
Features of semiconductor devices: Schottky
Technology: SiC
Type of module: diode
Electrical mounting: screw
Load current: 100A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній