Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 50 з 69
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT100DA120T1G | MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper; NTC thermistor Collector current: 100A |
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| APTGT100DA120T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper; NTC thermistor Collector current: 100A кількість в упаковці: 17 шт |
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| APTGT100DA60T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper; NTC thermistor Collector current: 100A |
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| APTGT100DA60T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper; NTC thermistor Collector current: 100A кількість в упаковці: 21 шт |
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| APTGT100DH120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: asymmetrical bridge; NTC thermistor Collector current: 100A |
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| APTGT100DH120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: asymmetrical bridge; NTC thermistor Collector current: 100A кількість в упаковці: 8 шт |
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| APTGT100DH60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: asymmetrical bridge; NTC thermistor Collector current: 100A |
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| APTGT100DH60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: asymmetrical bridge; NTC thermistor Collector current: 100A кількість в упаковці: 12 шт |
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| APTGT100DU120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A |
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| APTGT100DU120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A кількість в упаковці: 1 шт |
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| APTGT100DU170TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A |
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| APTGT100DU170TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A кількість в упаковці: 8 шт |
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| APTGT100DU60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A |
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| APTGT100DU60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A кількість в упаковці: 13 шт |
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| APTGT100H120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge Collector current: 100A |
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| APTGT100H120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge Collector current: 100A кількість в упаковці: 5 шт |
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| APTGT100H170G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge Collector current: 100A |
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| APTGT100H170G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge Collector current: 100A кількість в упаковці: 4 шт |
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| APTGT100H60T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge; NTC thermistor Collector current: 100A |
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| APTGT100H60T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge; NTC thermistor Collector current: 100A кількість в упаковці: 12 шт |
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| APTGT100H60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge; NTC thermistor Collector current: 100A |
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| APTGT100H60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge; NTC thermistor Collector current: 100A кількість в упаковці: 9 шт |
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| APTGT100SK170TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: buck chopper; NTC thermistor Collector current: 100A |
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| APTGT100SK170TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: buck chopper; NTC thermistor Collector current: 100A кількість в упаковці: 1 шт |
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| APTGT100TA120TPG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT half-bridge x3; NTC thermistor Collector current: 100A |
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| APTGT100TA120TPG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT half-bridge x3; NTC thermistor Collector current: 100A кількість в упаковці: 4 шт |
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| APTGT100TDU60PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x6 Collector current: 100A |
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| APTGT100TDU60PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x6 Collector current: 100A кількість в упаковці: 6 шт |
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| APTGT100TL170G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw Application: photovoltaics Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: three-level inverter; single-phase Collector current: 100A |
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| APTGT100TL170G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw Application: photovoltaics Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: three-level inverter; single-phase Collector current: 100A кількість в упаковці: 4 шт |
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| APTGT100TL60T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3 Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Power dissipation: 340W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3 Type of module: IGBT Technology: Field Stop Gate-emitter voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Collector current: 100A |
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| APTGT100TL60T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3 Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Power dissipation: 340W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3 Type of module: IGBT Technology: Field Stop Gate-emitter voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Collector current: 100A кількість в упаковці: 1 шт |
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| APTGT150A120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP6C Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge |
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| APTGT150A120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP6C Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge кількість в упаковці: 6 шт |
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| APTGT150A120T3AG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Case: SP3 Application: motors Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor |
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| APTGT150A120T3AG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Case: SP3 Application: motors Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor кількість в упаковці: 8 шт |
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| APTGT150A120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP4 Power dissipation: 690W Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop Topology: IGBT half-bridge; NTC thermistor |
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| APTGT150A120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP4 Power dissipation: 690W Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop Topology: IGBT half-bridge; NTC thermistor кількість в упаковці: 1 шт |
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| APTGT150A60T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP1 Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor |
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| APTGT150A60T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP1 Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor кількість в упаковці: 14 шт |
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| APTGT150A60T3AG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Case: SP3 Application: motors Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor |
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| APTGT150A60T3AG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Case: SP3 Application: motors Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor кількість в упаковці: 12 шт |
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| APTGT150DA120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Case: SP6C Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper |
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| APTGT150DA120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Case: SP6C Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper кількість в упаковці: 8 шт |
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| APTGT150DA60T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Case: SP1 Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper; NTC thermistor |
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| APTGT150DA60T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Case: SP1 Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper; NTC thermistor кількість в упаковці: 19 шт |
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| APTGT150DH120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Case: SP6C Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge |
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| APTGT150DH120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Case: SP6C Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge кількість в упаковці: 6 шт |
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| APTGT150DH170G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV Case: SP6C Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge |
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| APTGT150DH170G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV Case: SP6C Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge кількість в упаковці: 5 шт |
товар відсутній |
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| APTGT150DH60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Case: SP4 Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge; NTC thermistor |
товар відсутній |
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| APTGT150DH60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Case: SP4 Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge; NTC thermistor кількість в упаковці: 1 шт |
товар відсутній |
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| APTGT150DU120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP6C Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2 |
товар відсутній |
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| APTGT150DU120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP6C Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2 кількість в упаковці: 6 шт |
товар відсутній |
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| APTGT150DU120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP4 Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor |
товар відсутній |
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| APTGT150DU120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP4 Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor кількість в упаковці: 8 шт |
товар відсутній |
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| APTGT150H120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Case: SP6C Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge |
товар відсутній |
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| APTGT150H120G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Case: SP6C Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge кількість в упаковці: 4 шт |
товар відсутній |
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| APTGT150H60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Case: SP4 Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge; NTC thermistor |
товар відсутній |
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| APTGT150H60TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Case: SP4 Application: motors Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge; NTC thermistor кількість в упаковці: 7 шт |
товар відсутній |
| APTGT100DA120T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100DA120T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
кількість в упаковці: 17 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
кількість в упаковці: 17 шт
товар відсутній
| APTGT100DA60T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100DA60T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
кількість в упаковці: 21 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 100A
кількість в упаковці: 21 шт
товар відсутній
| APTGT100DH120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100DH120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 8 шт
товар відсутній
| APTGT100DH60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100DH60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: asymmetrical bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 12 шт
товар відсутній
| APTGT100DU120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100DU120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
кількість в упаковці: 1 шт
товар відсутній
| APTGT100DU170TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100DU170TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
кількість в упаковці: 8 шт
товар відсутній
| APTGT100DU60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100DU60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
кількість в упаковці: 13 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x2; NTC thermistor
Collector current: 100A
кількість в упаковці: 13 шт
товар відсутній
| APTGT100H120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
товар відсутній
| APTGT100H120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
кількість в упаковці: 5 шт
товар відсутній
| APTGT100H170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
товар відсутній
| APTGT100H170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
кількість в упаковці: 4 шт
товар відсутній
| APTGT100H60T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100H60T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 12 шт
товар відсутній
| APTGT100H60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100H60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
кількість в упаковці: 9 шт
товар відсутній
| APTGT100SK170TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100SK170TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 100A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 100A
кількість в упаковці: 1 шт
товар відсутній
| APTGT100TA120TPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 100A
товар відсутній
| APTGT100TA120TPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 100A
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 100A
кількість в упаковці: 4 шт
товар відсутній
| APTGT100TDU60PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x6
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x6
Collector current: 100A
товар відсутній
| APTGT100TDU60PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x6
Collector current: 100A
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Pulsed collector current: 200A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT x6
Collector current: 100A
кількість в упаковці: 6 шт
товар відсутній
| APTGT100TL170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw
Application: photovoltaics
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: three-level inverter; single-phase
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw
Application: photovoltaics
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: three-level inverter; single-phase
Collector current: 100A
товар відсутній
| APTGT100TL170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw
Application: photovoltaics
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: three-level inverter; single-phase
Collector current: 100A
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw
Application: photovoltaics
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: three-level inverter; single-phase
Collector current: 100A
кількість в упаковці: 4 шт
товар відсутній
| APTGT100TL60T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
товар відсутній
| APTGT100TL60T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
кількість в упаковці: 1 шт
товар відсутній
| APTGT150A120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
товар відсутній
| APTGT150A120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 6 шт
товар відсутній
| APTGT150A120T3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
товар відсутній
| APTGT150A120T3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
кількість в упаковці: 8 шт
товар відсутній
| APTGT150A120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP4
Power dissipation: 690W
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP4
Power dissipation: 690W
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
товар відсутній
| APTGT150A120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP4
Power dissipation: 690W
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP4
Power dissipation: 690W
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTGT150A60T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
товар відсутній
| APTGT150A60T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
кількість в упаковці: 14 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
кількість в упаковці: 14 шт
товар відсутній
| APTGT150A60T3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
товар відсутній
| APTGT150A60T3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Case: SP3
Application: motors
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
кількість в упаковці: 12 шт
товар відсутній
| APTGT150DA120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
товар відсутній
| APTGT150DA120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
кількість в упаковці: 8 шт
товар відсутній
| APTGT150DA60T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
товар відсутній
| APTGT150DA60T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
кількість в упаковці: 19 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Case: SP1
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
кількість в упаковці: 19 шт
товар відсутній
| APTGT150DH120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
товар відсутній
| APTGT150DH120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
кількість в упаковці: 6 шт
товар відсутній
| APTGT150DH170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Case: SP6C
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Case: SP6C
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
товар відсутній
| APTGT150DH170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Case: SP6C
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Case: SP6C
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
кількість в упаковці: 5 шт
товар відсутній
| APTGT150DH60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
товар відсутній
| APTGT150DH60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTGT150DU120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
товар відсутній
| APTGT150DU120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
кількість в упаковці: 6 шт
товар відсутній
| APTGT150DU120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
товар відсутній
| APTGT150DU120TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SP4
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
кількість в упаковці: 8 шт
товар відсутній
| APTGT150H120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
товар відсутній
| APTGT150H120G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Case: SP6C
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
кількість в упаковці: 4 шт
товар відсутній
| APTGT150H60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: SP4
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: SP4
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
товар відсутній
| APTGT150H60TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: SP4
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
кількість в упаковці: 7 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: SP4
Application: motors
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
кількість в упаковці: 7 шт
товар відсутній