Технічний опис APTGT200A60T3AG Microchip Technology
Description: IGBT MODULE 600V 290A 750W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 750 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V.
Інші пропозиції APTGT200A60T3AG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT200A60T3AG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Application: motors Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A кількість в упаковці: 11 шт |
товар відсутній |
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APTGT200A60T3AG | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 750 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
товар відсутній |
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APTGT200A60T3AG | Виробник : Microchip Technology |
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товар відсутній |
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APTGT200A60T3AG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Application: motors Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
товар відсутній |