Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4152) > Сторінка 28 з 70
| Фото | Назва | Виробник | Інформація |
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APT15D40KG | MICROCHIP (MICROSEMI) |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: ultrafast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 19ns |
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APT15D40KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: ultrafast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 19ns кількість в упаковці: 1 шт |
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APT15D60BCAG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED Load current: 15A Semiconductor structure: common anode; double Reverse recovery time: 21ns Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V |
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APT15D60BCAG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED Load current: 15A Semiconductor structure: common anode; double Reverse recovery time: 21ns Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V кількість в упаковці: 1 шт |
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| APT15D60BCTG | MICROCHIP (MICROSEMI) |
APT15D60BCTG THT universal diodes |
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| APT15D60BG | MICROCHIP (MICROSEMI) |
APT15D60BG THT universal diodes |
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APT15D60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns |
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APT15D60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns кількість в упаковці: 1 шт |
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APT15DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V Case: TO247AC Mounting: THT Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 29A Max. forward voltage: 2.5V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 235ns Max. forward impulse current: 80A Type of diode: rectifying |
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APT15DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V Case: TO247AC Mounting: THT Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 29A Max. forward voltage: 2.5V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 235ns Max. forward impulse current: 80A Type of diode: rectifying кількість в упаковці: 1 шт |
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APT15DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-2 Max. forward voltage: 2.5V Reverse recovery time: 20ns Application: automotive industry Technology: FRED |
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APT15DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-2 Max. forward voltage: 2.5V Reverse recovery time: 20ns Application: automotive industry Technology: FRED кількість в упаковці: 1 шт |
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APT15DQ100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 2.5V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 20ns |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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APT15DQ100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 2.5V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 20ns кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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| APT15DQ120BG | MICROCHIP (MICROSEMI) |
APT15DQ120BG THT universal diodes |
на замовлення 268 шт: термін постачання 14-21 дні (днів) |
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| APT15DQ120BHBG | MICROCHIP (MICROSEMI) |
APT15DQ120BHBG THT universal diodes |
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APT15DQ120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm Technology: FRED Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Application: automotive industry Reverse recovery time: 21ns Heatsink thickness: 1.14...1.4mm Type of diode: rectifying Max. forward voltage: 2.8V Load current: 15A |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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APT15DQ120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm Technology: FRED Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Application: automotive industry Reverse recovery time: 21ns Heatsink thickness: 1.14...1.4mm Type of diode: rectifying Max. forward voltage: 2.8V Load current: 15A кількість в упаковці: 1 шт |
на замовлення 108 шт: термін постачання 14-21 дні (днів) |
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| APT15DQ60BCTG | MICROCHIP (MICROSEMI) |
APT15DQ60BCTG THT universal diodes |
на замовлення 217 шт: термін постачання 14-21 дні (днів) |
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| APT15DQ60BG | MICROCHIP (MICROSEMI) |
APT15DQ60BG THT universal diodes |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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APT15DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 15ns |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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APT15DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 15ns кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 14-21 дні (днів) |
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| APT15DQ60SG | MICROCHIP (MICROSEMI) |
APT15DQ60SG SMD universal diodes |
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| APT15DS60BG | MICROCHIP (MICROSEMI) |
APT15DS60BG THT universal diodes |
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APT15GN120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3 Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: TO247-3 Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: THT Collector-emitter voltage: 1.2kV |
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APT15GN120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3 Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: TO247-3 Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: THT Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
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APT15GN120SDQ1G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: D3PAK Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: SMD Collector-emitter voltage: 1.2kV |
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APT15GN120SDQ1G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: D3PAK Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: SMD Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
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APT15GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Collector current: 27A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 65A Mounting: THT Gate charge: 55nC Kind of package: tube Turn-on time: 20ns Turn-off time: 160ns Features of semiconductor devices: integrated anti-parallel diode |
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APT15GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Collector current: 27A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 65A Mounting: THT Gate charge: 55nC Kind of package: tube Turn-on time: 20ns Turn-off time: 160ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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APT15GP60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 157ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V |
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APT15GP60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 157ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V кількість в упаковці: 1 шт |
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APT15GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3 Type of transistor: IGBT Collector current: 21A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 60A Turn-on time: 23ns Turn-off time: 170ns Collector-emitter voltage: 900V Power dissipation: 250W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 60nC |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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APT15GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3 Type of transistor: IGBT Collector current: 21A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 60A Turn-on time: 23ns Turn-off time: 170ns Collector-emitter voltage: 900V Power dissipation: 250W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 60nC кількість в упаковці: 1 шт |
на замовлення 82 шт: термін постачання 14-21 дні (днів) |
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APT15GT120BRDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3 Power dissipation: 250W Gate charge: 105nC Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 21ns Kind of package: tube Case: TO247-3 Turn-off time: 137ns Gate-emitter voltage: ±30V Collector current: 18A Mounting: THT Collector-emitter voltage: 1.2kV |
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APT15GT120BRDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3 Power dissipation: 250W Gate charge: 105nC Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 21ns Kind of package: tube Case: TO247-3 Turn-off time: 137ns Gate-emitter voltage: ±30V Collector current: 18A Mounting: THT Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
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APT17F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3 Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A |
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APT17F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3 Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A кількість в упаковці: 1 шт |
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APT17F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK Type of transistor: N-MOSFET Mounting: SMD Case: D3PAK On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A |
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APT17F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK Type of transistor: N-MOSFET Mounting: SMD Case: D3PAK On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A кількість в упаковці: 1 шт |
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| APT17F120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 12A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.58Ω Pulsed drain current: 104A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
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| APT17F120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 12A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.58Ω Pulsed drain current: 104A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT17F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 70A Gate charge: 122nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.58Ω Gate-source voltage: ±30V |
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APT17F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 70A Gate charge: 122nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.58Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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| APT17F80S | MICROCHIP (MICROSEMI) |
APT17F80S SMD N channel transistors |
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APT18F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 65A Power dissipation: 335W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced |
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APT18F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 65A Power dissipation: 335W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT18M100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 68A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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APT18M100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 68A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT18M100S | MICROCHIP (MICROSEMI) |
APT18M100S SMD N channel transistors |
товар відсутній |
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APT18M80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 12A; Idm: 70A; 500W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Pulsed drain current: 70A Power dissipation: 500W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced |
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APT18M80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 12A; Idm: 70A; 500W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Pulsed drain current: 70A Power dissipation: 500W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT19F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 13A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 440mΩ Pulsed drain current: 120A Power dissipation: 460W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |
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| APT19F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 13A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 440mΩ Pulsed drain current: 120A Power dissipation: 460W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT19M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 12A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 530mΩ Pulsed drain current: 104A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
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| APT19M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 12A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 530mΩ Pulsed drain current: 104A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT200GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Case: T-Max Mounting: THT Kind of package: tube Technology: Field Stop Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Type of transistor: IGBT Power dissipation: 682W Gate charge: 1180nC Collector-emitter voltage: 600V |
товар відсутній |
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APT200GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Case: T-Max Mounting: THT Kind of package: tube Technology: Field Stop Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Type of transistor: IGBT Power dissipation: 682W Gate charge: 1180nC Collector-emitter voltage: 600V кількість в упаковці: 1 шт |
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| APT200GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: Field Stop; Trench Application: for inductive load; for UPS; motors Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A |
товар відсутній |
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| APT200GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: Field Stop; Trench Application: for inductive load; for UPS; motors Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A кількість в упаковці: 1 шт |
товар відсутній |
| APT15D40KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
товар відсутній
| APT15D40KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
кількість в упаковці: 1 шт
товар відсутній
| APT15D60BCAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
товар відсутній
| APT15D60BCAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
кількість в упаковці: 1 шт
товар відсутній
| APT15D60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
товар відсутній
| APT15D60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
кількість в упаковці: 1 шт
товар відсутній
| APT15DQ100BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
товар відсутній
| APT15DQ100BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
кількість в упаковці: 1 шт
товар відсутній
| APT15DQ100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 2.5V
Reverse recovery time: 20ns
Application: automotive industry
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 2.5V
Reverse recovery time: 20ns
Application: automotive industry
Technology: FRED
товар відсутній
| APT15DQ100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 2.5V
Reverse recovery time: 20ns
Application: automotive industry
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 2.5V
Reverse recovery time: 20ns
Application: automotive industry
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT15DQ100KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 316.96 грн |
| 4+ | 218.18 грн |
| APT15DQ100KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 380.35 грн |
| 4+ | 271.88 грн |
| 11+ | 246.88 грн |
| 25+ | 242.49 грн |
| APT15DQ120BG |
|
Виробник: MICROCHIP (MICROSEMI)
APT15DQ120BG THT universal diodes
APT15DQ120BG THT universal diodes
на замовлення 268 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 296.15 грн |
| 6+ | 186.26 грн |
| 16+ | 176.59 грн |
| APT15DQ120KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Application: automotive industry
Reverse recovery time: 21ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2.8V
Load current: 15A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Application: automotive industry
Reverse recovery time: 21ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2.8V
Load current: 15A
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 130.88 грн |
| 5+ | 117.88 грн |
| 8+ | 113.48 грн |
| 21+ | 106.89 грн |
| 100+ | 102.5 грн |
| APT15DQ120KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Application: automotive industry
Reverse recovery time: 21ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2.8V
Load current: 15A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Application: automotive industry
Reverse recovery time: 21ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2.8V
Load current: 15A
кількість в упаковці: 1 шт
на замовлення 108 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.06 грн |
| 5+ | 146.89 грн |
| 8+ | 136.18 грн |
| 21+ | 128.27 грн |
| 100+ | 123 грн |
| APT15DQ60BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
APT15DQ60BCTG THT universal diodes
APT15DQ60BCTG THT universal diodes
на замовлення 217 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 363.32 грн |
| 5+ | 223.16 грн |
| 13+ | 210.86 грн |
| APT15DQ60BG |
|
Виробник: MICROCHIP (MICROSEMI)
APT15DQ60BG THT universal diodes
APT15DQ60BG THT universal diodes
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 327.37 грн |
| 6+ | 198.56 грн |
| 15+ | 188.01 грн |
| APT15DQ60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.9 грн |
| 5+ | 138.38 грн |
| 8+ | 115.68 грн |
| 21+ | 109.09 грн |
| APT15DQ60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.28 грн |
| 5+ | 172.44 грн |
| 8+ | 138.81 грн |
| 21+ | 130.91 грн |
| 50+ | 126.51 грн |
| APT15GN120BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
товар відсутній
| APT15GN120BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| APT15GN120SDQ1G |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
товар відсутній
| APT15GN120SDQ1G |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| APT15GP60BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 65A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 65A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT15GP60BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 65A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 65A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| APT15GP60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
товар відсутній
| APT15GP60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APT15GP90BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Type of transistor: IGBT
Collector current: 21A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 23ns
Turn-off time: 170ns
Collector-emitter voltage: 900V
Power dissipation: 250W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 60nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Type of transistor: IGBT
Collector current: 21A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 23ns
Turn-off time: 170ns
Collector-emitter voltage: 900V
Power dissipation: 250W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 60nC
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 596.87 грн |
| 3+ | 414.39 грн |
| 6+ | 392.43 грн |
| APT15GP90BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Type of transistor: IGBT
Collector current: 21A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 23ns
Turn-off time: 170ns
Collector-emitter voltage: 900V
Power dissipation: 250W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 60nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Type of transistor: IGBT
Collector current: 21A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 23ns
Turn-off time: 170ns
Collector-emitter voltage: 900V
Power dissipation: 250W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 60nC
кількість в упаковці: 1 шт
на замовлення 82 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 716.24 грн |
| 3+ | 516.4 грн |
| 6+ | 470.91 грн |
| APT15GT120BRDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
товар відсутній
| APT15GT120BRDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| APT17F100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
товар відсутній
| APT17F100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
кількість в упаковці: 1 шт
товар відсутній
| APT17F100S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
товар відсутній
| APT17F100S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
кількість в упаковці: 1 шт
товар відсутній
| APT17F120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.58Ω
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.58Ω
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APT17F120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.58Ω
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.58Ω
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT17F80B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
товар відсутній
| APT17F80B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT18F60B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
товар відсутній
| APT18F60B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT18M100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
товар відсутній
| APT18M100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 68A; 625W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT18M80B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 12A; Idm: 70A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 12A; Idm: 70A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
товар відсутній
| APT18M80B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 12A; Idm: 70A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 12A; Idm: 70A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT19F100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 460W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 460W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APT19F100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 460W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 460W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT19M120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 530mΩ
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 530mΩ
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APT19M120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 530mΩ
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 12A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 530mΩ
Pulsed drain current: 104A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT200GN60B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Case: T-Max
Mounting: THT
Kind of package: tube
Technology: Field Stop
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
Turn-on time: 130ns
Turn-off time: 690ns
Type of transistor: IGBT
Power dissipation: 682W
Gate charge: 1180nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Case: T-Max
Mounting: THT
Kind of package: tube
Technology: Field Stop
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
Turn-on time: 130ns
Turn-off time: 690ns
Type of transistor: IGBT
Power dissipation: 682W
Gate charge: 1180nC
Collector-emitter voltage: 600V
товар відсутній
| APT200GN60B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Case: T-Max
Mounting: THT
Kind of package: tube
Technology: Field Stop
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
Turn-on time: 130ns
Turn-off time: 690ns
Type of transistor: IGBT
Power dissipation: 682W
Gate charge: 1180nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Case: T-Max
Mounting: THT
Kind of package: tube
Technology: Field Stop
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
Turn-on time: 130ns
Turn-off time: 690ns
Type of transistor: IGBT
Power dissipation: 682W
Gate charge: 1180nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APT200GN60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Application: for inductive load; for UPS; motors
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Application: for inductive load; for UPS; motors
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
товар відсутній
| APT200GN60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Application: for inductive load; for UPS; motors
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Application: for inductive load; for UPS; motors
Gate-emitter voltage: ±20V
Collector current: 158A
Pulsed collector current: 600A
кількість в упаковці: 1 шт
товар відсутній