Технічний опис APTGT200A120D3G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: D3, Application: motors, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 400A, Technology: Field Stop; Trench, Mechanical mounting: screw, кількість в упаковці: 5 шт.
Інші пропозиції APTGT200A120D3G
Фото | Назва | Виробник | Інформація |
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APTGT200A120D3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: D3 Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 5 шт |
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APTGT200A120D3G | Виробник : MICROSEMI |
![]() кількість в упаковці: 1 шт |
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APTGT200A120D3G | Виробник : Microsemi Power Products Group |
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APTGT200A120D3G | Виробник : Microchip Technology |
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APTGT200A120D3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: D3 Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |