Технічний опис APTGT150DU120TG Microchip Technology
Description: IGBT MODULE 1200V 220A 690W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 690 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V.
Інші пропозиції APTGT150DU120TG
Фото | Назва | Виробник | Інформація |
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APTGT150DU120TG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP4 Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor кількість в упаковці: 8 шт |
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APTGT150DU120TG | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 220A 690W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
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APTGT150DU120TG | Виробник : Microsemi | IGBT Modules Power Module - IGBT |
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APTGT150DU120TG | Виробник : Microchip Technology | IGBT Modules PM-IGBT-TFS-SP4 |
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APTGT150DU120TG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP4 Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor |
товар відсутній |