Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4200) > Сторінка 35 з 70
| Фото | Назва | Виробник | Інформація |
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| APT30M40JVR | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar |
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| APT30M40JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar кількість в упаковці: 1 шт |
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| APT30M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT30M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M61BFLLG | MICROCHIP (MICROSEMI) | APT30M61BFLLG THT N channel transistors |
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| APT30M61BLLG | MICROCHIP (MICROSEMI) | APT30M61BLLG THT N channel transistors |
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APT30M61SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK Mounting: SMD Drain current: 54A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: D3PAK On-state resistance: 61mΩ Power dissipation: 403W Gate charge: 64nC Polarisation: unipolar Technology: POWER MOS 7® |
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APT30M61SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK Mounting: SMD Drain current: 54A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: D3PAK On-state resistance: 61mΩ Power dissipation: 403W Gate charge: 64nC Polarisation: unipolar Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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| APT30M61SLLG | MICROCHIP (MICROSEMI) | APT30M61SLLG SMD N channel transistors |
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| APT30M70BVFRG | MICROCHIP (MICROSEMI) |
APT30M70BVFRG THT N channel transistors |
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| APT30M70BVRG | MICROCHIP (MICROSEMI) |
APT30M70BVRG THT N channel transistors |
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APT30M75BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 57nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Drain-source voltage: 300V Drain current: 44A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 329W Polarisation: unipolar |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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APT30M75BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 57nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Drain-source voltage: 300V Drain current: 44A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 329W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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| APT30M75BLLG | MICROCHIP (MICROSEMI) | APT30M75BLLG THT N channel transistors |
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APT30M85BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar |
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APT30M85BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar кількість в упаковці: 1 шт |
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APT30N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 89A Power dissipation: 219W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 88nC Kind of channel: enhanced |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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APT30N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 89A Power dissipation: 219W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 88nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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| APT30S20BCTG | MICROCHIP (MICROSEMI) |
APT30S20BCTG THT Schottky diodes |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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| APT30S20BG | MICROCHIP (MICROSEMI) |
APT30S20BG THT Schottky diodes |
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| APT31M100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced |
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| APT31M100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT31M100L | MICROCHIP (MICROSEMI) |
APT31M100L THT N channel transistors |
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| APT32F120J | MICROCHIP (MICROSEMI) |
APT32F120J Transistor modules MOSFET |
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| APT32M80J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.19Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT32M80J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.19Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT33GF120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC |
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APT33GF120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC кількість в упаковці: 1 шт |
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APT33GF120BRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3 Type of transistor: IGBT Technology: Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 33A Power dissipation: 297W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 104A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 85ns Turn-off time: 284ns |
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APT33GF120BRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3 Type of transistor: IGBT Technology: Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 33A Power dissipation: 297W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 104A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 85ns Turn-off time: 284ns кількість в упаковці: 1 шт |
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APT33GF120LRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264 Type of transistor: IGBT Collector current: 30A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC |
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APT33GF120LRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264 Type of transistor: IGBT Collector current: 30A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC кількість в упаковці: 1 шт |
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| APT34F100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 140A Power dissipation: 1135W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 380mΩ Mounting: THT Gate charge: 305nC Kind of channel: enhanced |
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| APT34F100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 140A Power dissipation: 1135W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 380mΩ Mounting: THT Gate charge: 305nC Kind of channel: enhanced |
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APT34F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264 Mounting: THT Case: TO264 Pulsed drain current: 140A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Power dissipation: 1135W Polarisation: unipolar Gate charge: 305nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V |
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APT34F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264 Mounting: THT Case: TO264 Pulsed drain current: 140A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Power dissipation: 1135W Polarisation: unipolar Gate charge: 305nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT34F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced |
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APT34F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT34F60S | MICROCHIP (MICROSEMI) |
APT34F60S SMD N channel transistors |
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| APT34M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw Case: ISOTOP Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 290mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 960W Pulsed drain current: 195A Gate-source voltage: ±30V Type of module: MOSFET transistor |
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| APT34M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw Case: ISOTOP Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 290mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 960W Pulsed drain current: 195A Gate-source voltage: ±30V Type of module: MOSFET transistor |
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APT34M60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced |
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APT34M60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT34M60S | MICROCHIP (MICROSEMI) |
APT34M60S SMD N channel transistors |
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| APT34N80B2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced |
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| APT34N80B2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT34N80LC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced |
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APT34N80LC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT35GA90B | MICROCHIP (MICROSEMI) |
APT35GA90B THT IGBT transistors |
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APT35GA90BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 35A Power dissipation: 290W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 105A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 25ns Turn-off time: 298ns Features of semiconductor devices: integrated anti-parallel diode |
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APT35GA90BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 35A Power dissipation: 290W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 105A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 25ns Turn-off time: 298ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| APT35GN120BG | MICROCHIP (MICROSEMI) |
APT35GN120BG THT IGBT transistors |
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| APT35GN120L2DQ2G | MICROCHIP (MICROSEMI) |
APT35GN120L2DQ2G THT IGBT transistors |
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| APT35GN120SG | MICROCHIP (MICROSEMI) |
APT35GN120SG SMD IGBT transistors |
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| APT35GP120B2D2G | MICROCHIP (MICROSEMI) | APT35GP120B2D2G THT IGBT transistors |
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APT35GP120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max Type of transistor: IGBT Collector current: 46A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 150nC |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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APT35GP120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max Type of transistor: IGBT Collector current: 46A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 150nC кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
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APT35GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3 Type of transistor: IGBT Collector current: 46A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 222ns Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Kind of package: tube Gate charge: 150nC |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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APT35GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3 Type of transistor: IGBT Collector current: 46A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 222ns Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Kind of package: tube Gate charge: 150nC кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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APT35GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B Technology: POWER MOS 7®; PT Collector current: 29A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 140A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
| APT30M40JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
товар відсутній
| APT30M40JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| APT30M60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT30M60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M61BFLLG |
Виробник: MICROCHIP (MICROSEMI)
APT30M61BFLLG THT N channel transistors
APT30M61BFLLG THT N channel transistors
товар відсутній
| APT30M61SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
товар відсутній
| APT30M61SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APT30M70BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
APT30M70BVFRG THT N channel transistors
APT30M70BVFRG THT N channel transistors
товар відсутній
| APT30M75BFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 982.86 грн |
| 3+ | 862.45 грн |
| 10+ | 846.72 грн |
| APT30M75BFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1179.43 грн |
| 3+ | 1074.75 грн |
| 10+ | 1016.06 грн |
| APT30M85BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товар відсутній
| APT30M85BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| APT30N60BC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 551.95 грн |
| 3+ | 508.03 грн |
| APT30N60BC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 662.34 грн |
| 3+ | 633.08 грн |
| APT30S20BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
APT30S20BCTG THT Schottky diodes
APT30S20BCTG THT Schottky diodes
на замовлення 38 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 943.16 грн |
| 2+ | 574.57 грн |
| 6+ | 543.1 грн |
| APT31M100B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
товар відсутній
| APT31M100B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT32M80J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT32M80J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT33GF120B2RDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
товар відсутній
| APT33GF120B2RDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
кількість в упаковці: 1 шт
товар відсутній
| APT33GF120BRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
товар відсутній
| APT33GF120BRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
кількість в упаковці: 1 шт
товар відсутній
| APT33GF120LRDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
товар відсутній
| APT33GF120LRDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
кількість в упаковці: 1 шт
товар відсутній
| APT34F100B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
товар відсутній
| APT34F100B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
товар відсутній
| APT34F100L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 305nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 305nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| APT34F100L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 305nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 305nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT34F60B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
товар відсутній
| APT34F60B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT34M120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
товар відсутній
| APT34M120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
товар відсутній
| APT34M60B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
товар відсутній
| APT34M60B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT34N80B2C3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
товар відсутній
| APT34N80B2C3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT34N80LC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
товар відсутній
| APT34N80LC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT35GA90BD15 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT35GA90BD15 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| APT35GN120L2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
APT35GN120L2DQ2G THT IGBT transistors
APT35GN120L2DQ2G THT IGBT transistors
товар відсутній
| APT35GP120B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4251.79 грн |
| APT35GP120B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5102.15 грн |
| APT35GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1180.56 грн |
| 3+ | 1036.29 грн |
| APT35GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1416.67 грн |
| 3+ | 1291.38 грн |
| APT35GP120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 29A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 29A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2482.16 грн |