APTGT150DH120G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Case: SP6C
Pulsed collector current: 350A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
кількість в упаковці: 6 шт
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Технічний опис APTGT150DH120G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 220A 690W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 690 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V.
Інші пропозиції APTGT150DH120G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT150DH120G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 220A 690W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
товар відсутній |
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APTGT150DH120G | Виробник : Microchip Technology | IGBT Modules PM-IGBT-TFS-SP6C |
товар відсутній |
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APTGT150DH120G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Case: SP6C Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge |
товар відсутній |