Технічний опис APTGT150A120TG Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Case: SP4, Power dissipation: 690W, Pulsed collector current: 350A, Collector current: 150A, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; soldering, Mechanical mounting: screw, Type of module: IGBT, Technology: Field Stop, Topology: IGBT half-bridge; NTC thermistor, кількість в упаковці: 1 шт.
Інші пропозиції APTGT150A120TG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APTGT150A120TG | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP4 Power dissipation: 690W Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop Topology: IGBT half-bridge; NTC thermistor кількість в упаковці: 1 шт |
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| APTGT150A120TG | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 220A 690W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
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| APTGT150A120TG | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT150A120TG | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP4 |
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| APTGT150A120TG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: SP4 Power dissipation: 690W Pulsed collector current: 350A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop Topology: IGBT half-bridge; NTC thermistor |
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