| Фото | Назва | Виробник | Інформація |
Доступність |
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LF21904NTR | IXYS |
 Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A Mounting: SMD Operating temperature: -40...125°C Case: SO14 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V Supply voltage: 10...20V Output current: -4.5...4.5A Type of integrated circuit: driver Number of channels: 2 |
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LF2190NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A Mounting: SMD Operating temperature: -40...125°C Case: SO8 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V Supply voltage: 10...20V Output current: -4.5...4.5A Type of integrated circuit: driver Number of channels: 2 |
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LF2304NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V |
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IXFH12N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 12A Power dissipation: 380W Case: TO247-3 On-state resistance: 1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
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IXTA20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 320W Case: TO220AB On-state resistance: 0.21Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 0.35µs |
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IXTA20N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 22A Power dissipation: 290W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IXTH20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 320W Case: TO247-3 On-state resistance: 0.21Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 0.35µs |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
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IXTH20N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 290W Case: TO247-3 On-state resistance: 0.185Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 0.35µs |
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IXTP20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 320W Case: TO220AB On-state resistance: 0.21Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 0.35µs |
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IXTP20N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 290W Case: TO220AB On-state resistance: 0.185Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 0.35µs |
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IXYH50N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 56ns Turn-off time: 142ns |
на замовлення 246 шт: термін постачання 21-30 дні (днів) |
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IXFH15N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 543W Case: TO247-3 On-state resistance: 760mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced |
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IXFH15N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXFR15N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 400W Case: ISOPLUS247™ On-state resistance: 1.2Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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IXTA80N075L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO263 On-state resistance: 24mΩ Mounting: SMD Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
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IXTH80N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
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IXTP80N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO220AB On-state resistance: 24mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
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IXFA7N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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IXFP7N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IXFH40N50Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.14Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IXTH40N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.17Ω Mounting: THT Gate charge: 0.32µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
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IXTQ40N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO3P On-state resistance: 0.17Ω Mounting: THT Gate charge: 0.32µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
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IXTT40N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 0.32µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
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IXTK110N20L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
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IXTN110N20L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 275A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 24mΩ Gate charge: 500nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 420ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTX110N20L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 420ns |
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IXTQ460P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO3P Drain current: 24A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 480W Gate charge: 48nC Technology: Polar2™ Kind of channel: enhanced Gate-source voltage: ±30V Reverse recovery time: 400ns Drain-source voltage: 500V |
на замовлення 333 шт: термін постачання 21-30 дні (днів) |
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CPC1907B | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 6000mA; max.60VAC Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT On-state resistance: 60mΩ Case: SO8 Kind of output: MOSFET Insulation voltage: 5kV Contacts configuration: SPST-NO Max. operating current: 6A Turn-off time: 1ms Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 5ms |
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CPC1908J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 3.5A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.3Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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CPC1909J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC Body dimensions: 19.91x26.16x5.03mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: THT On-state resistance: 0.1Ω Case: ISOPLUS264™ Kind of output: MOSFET Insulation voltage: 2.5kV Contacts configuration: SPST-NO Max. operating current: 6.5A Turn-off time: 10ms Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 100mA Type of relay: solid state Turn-on time: 25ms |
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CPC1916Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 2.5A Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 0.34Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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CPC1918J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC Body dimensions: 19.91x26.16x5.03mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: THT On-state resistance: 0.1Ω Case: ISOPLUS264™ Kind of output: MOSFET Insulation voltage: 2.5kV Contacts configuration: SPST-NO Max. operating current: 5250mA Turn-off time: 10ms Relay variant: 1-phase; current source Switched voltage: max. 100V AC; max. 100V DC Control current max.: 100mA Type of relay: solid state Turn-on time: 25ms |
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| CPC1926Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 700mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 700mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 1.4Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
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CPC1927J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 2700mA; max.250VAC Body dimensions: 19.91x26.16x5.03mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: THT On-state resistance: 0.2Ω Turn-on time: 25ms Turn-off time: 10ms Kind of output: MOSFET Insulation voltage: 2.5kV Contacts configuration: SPST-NO Max. operating current: 2.7A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 100mA Case: ISOPLUS264™ |
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CPC1943G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; THT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: THT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 400V AC Control current max.: 100mA Type of relay: solid state |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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CPC1943GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 400V AC Control current max.: 100mA Type of relay: solid state |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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| CPC1943GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 400V AC Control current max.: 100mA Type of relay: solid state |
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CPC1945G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 400V AC Control current max.: 100mA Mounting: THT Case: DIP4 |
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IXFA24N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO263 On-state resistance: 0.175Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IXFH24N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.175Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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IXFP24N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO220AB On-state resistance: 0.175Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
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CPC1004N | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; 4.09x3.81x2.03mm Mounting: SMT Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...110°C Manufacturer series: OptoMOS Type of relay: solid state Relay variant: current source Switched voltage: max. 100V DC Control current max.: 50mA Case: SOP4 On-state resistance: 4Ω Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO Max. operating current: 300mA |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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CPC1004NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; 4.09x3.81x2.03mm Mounting: SMT Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...110°C Manufacturer series: OptoMOS Type of relay: solid state Relay variant: current source Switched voltage: max. 100V DC Control current max.: 50mA Case: SOP4 On-state resistance: 4Ω Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO Max. operating current: 300mA |
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IXTH16N10D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 830W Case: TO247-3 On-state resistance: 64mΩ Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 940ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXTT16N10D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 830W Case: TO268 On-state resistance: 64mΩ Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 940ns |
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IXTX600N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 1.5mΩ Features of semiconductor devices: thrench gate power mosfet Gate charge: 590nC Drain current: 600A Kind of channel: enhanced Drain-source voltage: 40V Mounting: THT Reverse recovery time: 100ns Case: PLUS247™ Polarisation: unipolar Power dissipation: 1.25kW |
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IXTX60N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 0.1Ω Features of semiconductor devices: linear power mosfet Gate charge: 610nC Drain current: 60A Kind of channel: enhanced Drain-source voltage: 500V Mounting: THT Reverse recovery time: 980ns Case: PLUS247™ Polarisation: unipolar Power dissipation: 960W |
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IXTP44N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO220AB On-state resistance: 30mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
на замовлення 293 шт: термін постачання 21-30 дні (днів) |
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IXTH24N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
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IXFP4N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO220AB Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
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IXTA1N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 50W Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 1A On-state resistance: 15Ω Type of transistor: N-MOSFET Polarisation: unipolar |
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IXTA2N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXTA3N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 820ns |
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IXTH3N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO247-3 Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 820ns |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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IXTP1N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns Mounting: THT Power dissipation: 50W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 15Ω Reverse recovery time: 750ns |
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IXTP2N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
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IXTP3N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO220AB Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 820ns |
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IXTY1N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1A Power dissipation: 50W Case: TO252 On-state resistance: 15Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
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IXTY2N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IXFK32N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| LF21904NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -4.5...4.5A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -4.5...4.5A
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
| LF2190NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -4.5...4.5A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -4.5...4.5A
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
| LF2304NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
товар відсутній
| IXFH12N90P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 12A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 12A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTA20N65X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
товар відсутній
| IXTA20N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 22A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 22A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.59 грн |
| 3+ | 294.74 грн |
| 4+ | 234.48 грн |
| 10+ | 222.14 грн |
| IXTH20N65X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
на замовлення 275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 631.69 грн |
| 3+ | 420.33 грн |
| 6+ | 397.82 грн |
| IXTH20N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
товар відсутній
| IXTP20N65X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
товар відсутній
| IXTP20N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
товар відсутній
| IXYH50N65C3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
на замовлення 246 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 714.56 грн |
| 2+ | 482.03 грн |
| 5+ | 455.9 грн |
| IXFH15N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH15N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 957.7 грн |
| 3+ | 841.38 грн |
| IXFR15N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1150.8 грн |
| 3+ | 1010.52 грн |
| IXTA80N075L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
товар відсутній
| IXTH80N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
товар відсутній
| IXTP80N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
товар відсутній
| IXFA7N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.26 грн |
| 6+ | 144.46 грн |
| 10+ | 143.01 грн |
| IXFP7N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.77 грн |
| 3+ | 211.98 грн |
| 5+ | 192.38 грн |
| 10+ | 190.2 грн |
| 13+ | 181.49 грн |
| IXFH40N50Q |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1048.39 грн |
| 3+ | 920.51 грн |
| IXTH40N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTQ40N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTT40N50L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTK110N20L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
товар відсутній
| IXTN110N20L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTX110N20L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 420ns
товар відсутній
| IXTQ460P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Reverse recovery time: 400ns
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Reverse recovery time: 400ns
Drain-source voltage: 500V
на замовлення 333 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 388.55 грн |
| 3+ | 328.13 грн |
| 4+ | 270.05 грн |
| 9+ | 255.53 грн |
| 30+ | 245.37 грн |
| CPC1907B |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 6000mA; max.60VAC
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 60mΩ
Case: SO8
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 6A
Turn-off time: 1ms
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 6000mA; max.60VAC
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 60mΩ
Case: SO8
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 6A
Turn-off time: 1ms
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 5ms
товар відсутній
| CPC1908J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| CPC1909J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
On-state resistance: 0.1Ω
Case: ISOPLUS264™
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 6.5A
Turn-off time: 10ms
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 100mA
Type of relay: solid state
Turn-on time: 25ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
On-state resistance: 0.1Ω
Case: ISOPLUS264™
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 6.5A
Turn-off time: 10ms
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 100mA
Type of relay: solid state
Turn-on time: 25ms
товар відсутній
| CPC1916Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2.5A
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2.5A
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 138 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 720.03 грн |
| 3+ | 304.17 грн |
| 8+ | 288.2 грн |
| CPC1918J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
On-state resistance: 0.1Ω
Case: ISOPLUS264™
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 5250mA
Turn-off time: 10ms
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 100mA
Type of relay: solid state
Turn-on time: 25ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
On-state resistance: 0.1Ω
Case: ISOPLUS264™
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 5250mA
Turn-off time: 10ms
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 100mA
Type of relay: solid state
Turn-on time: 25ms
товар відсутній
| CPC1926Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 700mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 1.4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 700mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 1.4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| CPC1927J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 2700mA; max.250VAC
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
On-state resistance: 0.2Ω
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 2.7A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 100mA
Case: ISOPLUS264™
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 2700mA; max.250VAC
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
On-state resistance: 0.2Ω
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 2.7A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 100mA
Case: ISOPLUS264™
товар відсутній
| CPC1943G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; THT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; THT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Type of relay: solid state
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 670 грн |
| 3+ | 299.09 грн |
| 8+ | 283.12 грн |
| CPC1943GS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Type of relay: solid state
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 670 грн |
| 3+ | 299.09 грн |
| CPC1943GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Type of relay: solid state
товар відсутній
| CPC1945G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
товар відсутній
| IXFA24N60X |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 385.42 грн |
| 3+ | 322.32 грн |
| 4+ | 256.26 грн |
| 10+ | 242.47 грн |
| IXFH24N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 462.04 грн |
| 3+ | 311.43 грн |
| 8+ | 294.74 грн |
| IXFP24N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
товар відсутній
| CPC1004N |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.03 грн |
| 11+ | 79.85 грн |
| 29+ | 75.5 грн |
| CPC1004NTR |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
товар відсутній
| IXTH16N10D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1203.18 грн |
| IXTT16N10D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO268
On-state resistance: 64mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO268
On-state resistance: 64mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
товар відсутній
| IXTX600N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 1.5mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Drain current: 600A
Kind of channel: enhanced
Drain-source voltage: 40V
Mounting: THT
Reverse recovery time: 100ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1.25kW
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 1.5mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Drain current: 600A
Kind of channel: enhanced
Drain-source voltage: 40V
Mounting: THT
Reverse recovery time: 100ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1.25kW
товар відсутній
| IXTX60N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 500V
Mounting: THT
Reverse recovery time: 980ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 960W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 500V
Mounting: THT
Reverse recovery time: 980ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 960W
товар відсутній
| IXTP44N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
на замовлення 293 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.31 грн |
| 10+ | 71.87 грн |
| 14+ | 63.88 грн |
| 37+ | 60.25 грн |
| IXTH24N50L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXFP4N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTA1N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
| IXTA2N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.09 грн |
| 7+ | 134.3 грн |
| IXTA3N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
товар відсутній
| IXTH3N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 377.61 грн |
| 3+ | 315.79 грн |
| 4+ | 238.84 грн |
| 10+ | 225.77 грн |
| IXTP1N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 15Ω
Reverse recovery time: 750ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 15Ω
Reverse recovery time: 750ns
товар відсутній
| IXTP2N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
товар відсутній
| IXTP3N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
товар відсутній
| IXTY1N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: TO252
On-state resistance: 15Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: TO252
On-state resistance: 15Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
| IXTY2N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 185.29 грн |
| 5+ | 155.35 грн |
| IXFK32N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній