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IXFL38N100P IXFL38N100P IXYS IXFL38N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Case: ISOPLUS i5-pac™
Kind of package: tube
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 0.35µC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 29A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1974.03 грн
2+ 1733.57 грн
25+ 1703.08 грн
IXFL44N100P IXFL44N100P IXYS IXFL44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1235.23 грн
3+ 1084.57 грн
IXFR26N100P IXFR26N100P IXYS IXFR26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+2183.55 грн
2+ 1917.24 грн
IXFR32N100P IXFR32N100P IXYS IXFR32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1361.1 грн
2+ 1194.92 грн
LOC210PTR IXYS Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Number of channels: 2
Trigger current: 1A
Type of optocoupler: optocoupler
Case: SO16
товар відсутній
IXFY4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; 80Ax4; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 80A x4
Semiconductor structure: common anode; quadruple
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+2362.58 грн
2+ 2074.04 грн
IXBH20N300 IXBH20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 250W
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
товар відсутній
IXFH110N10P IXFH110N10P IXYS IXFH110N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTH110N10L2 IXTH110N10L2 IXYS IXTH(T)110N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
товар відсутній
IXTQ110N10P IXTQ110N10P IXYS IXTQ110N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
товар відсутній
IXTT110N10L2 IXTT110N10L2 IXYS IXTH(T)110N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
товар відсутній
IXTT110N10P IXTT110N10P IXYS IXTQ110N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
товар відсутній
IXFH80N60X2A IXFH80N60X2A IXYS IXFH80N60X2A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 80A; Idm: 160A; 890W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Pulsed drain current: 160A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 200ns
товар відсутній
IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+1269.63 грн
2+ 848.64 грн
3+ 802.18 грн
IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1710.56 грн
IXFR80N60P3 IXFR80N60P3 IXYS IXFR80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFX80N60P3 IXFX80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
GUO40-08NO1 GUO40-08NO1 IXYS GUO40-08NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 40A; Ifsm: 370A; THT
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
товар відсутній
GUO40-12NO1 GUO40-12NO1 IXYS GUO40-12NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.06V
Leads: flat pin
Case: GUFP
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
1+1257.91 грн
2+ 1104.17 грн
GUO40-16NO1 GUO40-16NO1 IXYS GUO40-16NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 1.6kV
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
1+1257.91 грн
2+ 1104.17 грн
CPC1010N CPC1010N IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 11.5Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+202.48 грн
10+ 90.74 грн
Мінімальне замовлення: 2
CPC1010NTR CPC1010NTR IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 11.5Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
товар відсутній
CPC1014N CPC1014N IXYS cpc1014n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
на замовлення 1457 шт:
термін постачання 21-30 дні (днів)
3+160.27 грн
13+ 68.97 грн
34+ 65.34 грн
Мінімальне замовлення: 3
CPC1014NTR CPC1014NTR IXYS CPC1014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
товар відсутній
CPC1016N CPC1016N IXYS CPC1016N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 16Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
на замовлення 942 шт:
термін постачання 21-30 дні (днів)
3+152.45 грн
13+ 68.97 грн
34+ 65.34 грн
Мінімальне замовлення: 3
CPC1016NTR CPC1016NTR IXYS CPC1016N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 16Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
товар відсутній
CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.8Ω
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.6A
на замовлення 581 шт:
термін постачання 21-30 дні (днів)
2+267.37 грн
8+ 115.43 грн
20+ 109.62 грн
Мінімальне замовлення: 2
CPC1018NTR CPC1018NTR IXYS CPC1018N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1019N CPC1019N IXYS CPC1019N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.6Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 750mA
на замовлення 1936 шт:
термін постачання 21-30 дні (днів)
2+201.7 грн
10+ 90.74 грн
26+ 85.66 грн
Мінімальне замовлення: 2
CPC1019NTR CPC1019NTR IXYS CPC1019N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.6Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 750mA
товар відсутній
IXFA12N65X2 IXFA12N65X2 IXYS IXF_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
товар відсутній
IXFP12N65X2 IXFP12N65X2 IXYS IXF_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
на замовлення 269 шт:
термін постачання 21-30 дні (днів)
2+226.72 грн
3+ 188.75 грн
6+ 152.45 грн
16+ 144.46 грн
Мінімальне замовлення: 2
IXFP12N65X2M IXFP12N65X2M IXYS IXFP12N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
товар відсутній
IXTA12N65X2 IXTA12N65X2 IXYS IXT_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товар відсутній
IXTH12N65X2 IXTH12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
товар відсутній
IXTP12N65X2 IXTP12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товар відсутній
IXTP12N65X2M IXTP12N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n65x2m_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXXP12N65B4D1 IXXP12N65B4D1 IXYS IXXP12N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
товар відсутній
IXFR40N90P IXFR40N90P IXYS IXFR40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 230nC
Kind of channel: enhanced
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
IXFA30N60X IXFA30N60X IXYS IXFA(P)30N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFH30N60P IXFH30N60P IXYS IXFH(T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFH30N60X IXFH30N60X IXYS IXFH(T,Q)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFP30N60X IXFP30N60X IXYS IXFA(P)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFQ30N60X IXFQ30N60X IXYS IXFH(T,Q)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO3P; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO3P
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+876.39 грн
2+ 588.02 грн
3+ 587.29 грн
4+ 555.35 грн
IXFT30N60P IXFT30N60P IXYS IXFH(T,V)30N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXGA30N60C3C1 IXGA30N60C3C1 IXYS IXGx30N60C3C1-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 160ns
товар відсутній
IXKH30N60C5 IXKH30N60C5 IXYS IXKH30N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXTH30N60L2 IXTH30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
товар відсутній
MD18200S-DKM2MM IXYS media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Case: package S
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 1.8kV
Max. load current: 310A
Max. forward voltage: 1.5V
Load current: 200A
Semiconductor structure: common cathode; double
Max. forward impulse current: 6.5kA
товар відсутній
MCMA260PD1800YB IXYS media?resourcetype=datasheets&amp;itemid=214f7e0b-4391-44de-94d9-b2e861640996&amp;filename=littelfuse%2520power%2520semiconductors%2520mcma260pd1800yb%2520datasheet.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MIXA60HU1200VA IXYS media?resourcetype=datasheets&itemid=2F78F28E-2571-4338-8456-BDC39156D376&filename=Littelfuse-IGBT-Modules-XPT-Modules-MIXA60HU1200VA-Datasheet.PDF Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
MCC26-12io1B MCC26-12io1B IXYS L073.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.64V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
1+1569.06 грн
2+ 1377.86 грн
36+ 1351.72 грн
CS19-12HO1 CS19-12HO1 IXYS CS19-12HO1.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
на замовлення 427 шт:
термін постачання 21-30 дні (днів)
3+127.77 грн
8+ 113.97 грн
21+ 107.44 грн
50+ 105.26 грн
250+ 103.81 грн
Мінімальне замовлення: 3
CS19-12HO1S CS19-12HO1S IXYS CS19-12HO1S-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
товар відсутній
CS19-12HO1S-TUB CS19-12HO1S-TUB IXYS CS19-12HO1S.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
3+147.37 грн
7+ 132.12 грн
18+ 125.59 грн
Мінімальне замовлення: 3
IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Kind of package: tube
Type of integrated circuit: driver
Number of channels: 1
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Kind of output: non-inverting
Case: DIP8
Mounting: THT
Kind of integrated circuit: gate driver; low-side
Output current: -14...14A
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
3+138.66 грн
8+ 111.07 грн
22+ 104.54 грн
Мінімальне замовлення: 3
MCMA450UH1600TEH IXYS Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Max. forward impulse current: 2.4kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: E3-Pack
Max. off-state voltage: 1.6kV
Load current: 450A
товар відсутній
MDMA450UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товар відсутній
IXFL38N100P IXFL38N100P.pdf
IXFL38N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Case: ISOPLUS i5-pac™
Kind of package: tube
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 0.35µC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 29A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1974.03 грн
2+ 1733.57 грн
25+ 1703.08 грн
IXFL44N100P IXFL44N100P.pdf
IXFL44N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1235.23 грн
3+ 1084.57 грн
IXFR26N100P IXFR26N100P.pdf
IXFR26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2183.55 грн
2+ 1917.24 грн
IXFR32N100P IXFR32N100P.pdf
IXFR32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1361.1 грн
2+ 1194.92 грн
LOC210PTR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Number of channels: 2
Trigger current: 1A
Type of optocoupler: optocoupler
Case: SO16
товар відсутній
IXFY4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
DSA320A100NB
DSA320A100NB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; 80Ax4; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 80A x4
Semiconductor structure: common anode; quadruple
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2362.58 грн
2+ 2074.04 грн
IXBH20N300 littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf
IXBH20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 250W
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
товар відсутній
IXFH110N10P IXFH110N10P.pdf
IXFH110N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTH110N10L2 IXTH(T)110N10L2.pdf
IXTH110N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
товар відсутній
IXTQ110N10P IXTQ110N10P-DTE.pdf
IXTQ110N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
товар відсутній
IXTT110N10L2 IXTH(T)110N10L2.pdf
IXTT110N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
товар відсутній
IXTT110N10P IXTQ110N10P-DTE.pdf
IXTT110N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
товар відсутній
IXFH80N60X2A IXFH80N60X2A.pdf
IXFH80N60X2A
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 80A; Idm: 160A; 890W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Pulsed drain current: 160A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 200ns
товар відсутній
IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1269.63 грн
2+ 848.64 грн
3+ 802.18 грн
IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1710.56 грн
IXFR80N60P3 IXFR80N60P3.pdf
IXFR80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFX80N60P3 IXFK(X)80N60P3.pdf
IXFX80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
GUO40-08NO1 GUO40-08NO1.pdf
GUO40-08NO1
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 40A; Ifsm: 370A; THT
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
товар відсутній
GUO40-12NO1 GUO40-12NO1.pdf
GUO40-12NO1
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.06V
Leads: flat pin
Case: GUFP
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1257.91 грн
2+ 1104.17 грн
GUO40-16NO1 GUO40-16NO1.pdf
GUO40-16NO1
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 1.6kV
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1257.91 грн
2+ 1104.17 грн
CPC1010N CPC1010N.pdf
CPC1010N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 11.5Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+202.48 грн
10+ 90.74 грн
Мінімальне замовлення: 2
CPC1010NTR CPC1010N.pdf
CPC1010NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 11.5Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
товар відсутній
CPC1014N cpc1014n.pdf
CPC1014N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
на замовлення 1457 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+160.27 грн
13+ 68.97 грн
34+ 65.34 грн
Мінімальне замовлення: 3
CPC1014NTR CPC1014N.pdf
CPC1014NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 2Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.4A
товар відсутній
CPC1016N CPC1016N.pdf
CPC1016N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 16Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
на замовлення 942 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+152.45 грн
13+ 68.97 грн
34+ 65.34 грн
Мінімальне замовлення: 3
CPC1016NTR CPC1016N.pdf
CPC1016NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 16Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
товар відсутній
CPC1018N cpc1018n.pdf
CPC1018N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.8Ω
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 0.6A
на замовлення 581 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+267.37 грн
8+ 115.43 грн
20+ 109.62 грн
Мінімальне замовлення: 2
CPC1018NTR CPC1018N.pdf
CPC1018NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1019N CPC1019N.pdf
CPC1019N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.6Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 750mA
на замовлення 1936 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+201.7 грн
10+ 90.74 грн
26+ 85.66 грн
Мінімальне замовлення: 2
CPC1019NTR CPC1019N.pdf
CPC1019NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Switched voltage: max. 60V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.6Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 750mA
товар відсутній
IXFA12N65X2 IXF_12N65X2.pdf
IXFA12N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
товар відсутній
IXFP12N65X2 IXF_12N65X2.pdf
IXFP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
на замовлення 269 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+226.72 грн
3+ 188.75 грн
6+ 152.45 грн
16+ 144.46 грн
Мінімальне замовлення: 2
IXFP12N65X2M IXFP12N65X2M.pdf
IXFP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
товар відсутній
IXTA12N65X2 IXT_12N65X2.pdf
IXTA12N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товар відсутній
IXTH12N65X2 IXT_12N65X2.pdf
IXTH12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
товар відсутній
IXTP12N65X2 IXT_12N65X2.pdf
IXTP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товар відсутній
IXTP12N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n65x2m_datasheet.pdf.pdf
IXTP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXXP12N65B4D1 IXXP12N65B4D1.pdf
IXXP12N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
товар відсутній
IXFR40N90P IXFR40N90P.pdf
IXFR40N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 230nC
Kind of channel: enhanced
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
IXFA30N60X IXFA(P)30N60X.pdf
IXFA30N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFH30N60P IXFH(T,V)30N60P_S.pdf
IXFH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFH30N60X IXFH(T,Q)30N60X.pdf
IXFH30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFP30N60X IXFA(P)30N60X.pdf
IXFP30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFQ30N60X IXFH(T,Q)30N60X.pdf
IXFQ30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO3P; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO3P
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+876.39 грн
2+ 588.02 грн
3+ 587.29 грн
4+ 555.35 грн
IXFT30N60P IXFH(T,V)30N60P_S.pdf
IXFT30N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXGA30N60C3C1 IXGx30N60C3C1-DTE.pdf
IXGA30N60C3C1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 160ns
товар відсутній
IXKH30N60C5 IXKH30N60C5.pdf
IXKH30N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXTH30N60L2 IXT_30N60L2.pdf
IXTH30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
товар відсутній
MD18200S-DKM2MM media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Case: package S
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 1.8kV
Max. load current: 310A
Max. forward voltage: 1.5V
Load current: 200A
Semiconductor structure: common cathode; double
Max. forward impulse current: 6.5kA
товар відсутній
MCMA260PD1800YB media?resourcetype=datasheets&amp;itemid=214f7e0b-4391-44de-94d9-b2e861640996&amp;filename=littelfuse%2520power%2520semiconductors%2520mcma260pd1800yb%2520datasheet.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MIXA60HU1200VA media?resourcetype=datasheets&itemid=2F78F28E-2571-4338-8456-BDC39156D376&filename=Littelfuse-IGBT-Modules-XPT-Modules-MIXA60HU1200VA-Datasheet.PDF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
MCC26-12io1B L073.pdf
MCC26-12io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.64V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1569.06 грн
2+ 1377.86 грн
36+ 1351.72 грн
CS19-12HO1 description CS19-12HO1.pdf
CS19-12HO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
на замовлення 427 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+127.77 грн
8+ 113.97 грн
21+ 107.44 грн
50+ 105.26 грн
250+ 103.81 грн
Мінімальне замовлення: 3
CS19-12HO1S CS19-12HO1S-DTE.pdf
CS19-12HO1S
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
товар відсутній
CS19-12HO1S-TUB CS19-12HO1S.pdf
CS19-12HO1S-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+147.37 грн
7+ 132.12 грн
18+ 125.59 грн
Мінімальне замовлення: 3
IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Kind of package: tube
Type of integrated circuit: driver
Number of channels: 1
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Kind of output: non-inverting
Case: DIP8
Mounting: THT
Kind of integrated circuit: gate driver; low-side
Output current: -14...14A
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+138.66 грн
8+ 111.07 грн
22+ 104.54 грн
Мінімальне замовлення: 3
MCMA450UH1600TEH
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Max. forward impulse current: 2.4kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: E3-Pack
Max. off-state voltage: 1.6kV
Load current: 450A
товар відсутній
MDMA450UB1600PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товар відсутній
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