| Фото | Назва | Виробник | Інформація |
Доступність |
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CPC1008N | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms |
на замовлення 1827 шт: термін постачання 21-30 дні (днів) |
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CPC1008NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms |
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IXFH44N50P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 658W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
на замовлення 267 шт: термін постачання 21-30 дні (днів) |
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IXFA5N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263 Mounting: SMD Kind of package: tube Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Type of transistor: N-MOSFET Power dissipation: 250W Gate charge: 33.4nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Case: TO263 |
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IXFP5N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Power dissipation: 250W Case: TO220AB Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhanced |
на замовлення 122 шт: термін постачання 21-30 дні (днів) |
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| MII100-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A Case: Y4-M5 Application: motors; photovoltaics Power dissipation: 560W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 90A Pulsed collector current: 150A |
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| MIEB101H1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W Topology: H-bridge Technology: Sonic FRD™; SPT+ Case: E3-Pack Application: motors; photovoltaics Power dissipation: 630W Collector current: 128A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| MII145-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 700W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 200A |
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| DLA10IM800UC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 10A; DPAK; Ufmax: 1.16V; Ifsm: 120A; 75W Mounting: SMD Max. forward impulse current: 120A Case: DPAK Kind of package: reel; tape Power dissipation: 75W Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward voltage: 1.16V Load current: 10A Semiconductor structure: single diode |
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CPC1017N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
на замовлення 1741 шт: термін постачання 21-30 дні (днів) |
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CPC1017NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 60V DC; max. 600V AC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
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IXXH30N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns |
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IXYH30N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 118A Mounting: THT Gate charge: 44nC Kind of package: tube Turn-on time: 59ns Turn-off time: 0.12µs |
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DSEE55-24N1F | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Mounting: THT Case: ISOPLUS i4-pac™ x024b Max. off-state voltage: 1.2kV Max. forward voltage: 1.56V Load current: 60A Semiconductor structure: double series Reverse recovery time: 85ns Max. forward impulse current: 800A Power dissipation: 250W |
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FMM22-06PF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A Mounting: THT Kind of package: tube Gate charge: 58nC Technology: PolarHV™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.35Ω Type of transistor: N-MOSFET x2 Power dissipation: 130W Polarisation: unipolar |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXBH16N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Mounting: THT Turn-on time: 220ns Turn-off time: 940ns Type of transistor: IGBT Power dissipation: 250W Pulsed collector current: 120A Collector current: 16A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 72nC Technology: BiMOSFET™; FRED Case: TO247-3 |
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IXBH16N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3 Mounting: THT Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W Pulsed collector current: 40A Collector current: 10A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 65nC Technology: BiMOSFET™ Case: TO247-3 |
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IXFQ24N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 480W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
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IXFQ24N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO3P; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO3P On-state resistance: 0.175Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
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MCD224-20io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.03V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 390A Threshold on-voltage: 0.72V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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CPC1035N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
на замовлення 1475 шт: термін постачання 21-30 дні (днів) |
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CPC1035NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
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IXFA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 85ns |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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IXFH90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 85ns |
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IXFP90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 85ns |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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IXFP90N20X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 85ns |
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IXFQ90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO3P Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 85ns |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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| IXTA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Pulsed drain current: 220A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 124ns |
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OMA160 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Control current max.: 50mA Mounting: THT Case: DIP6 On-state resistance: 100Ω Turn-on time: 125µs Turn-off time: 125µs Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 50mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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OMA160S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 125µs Turn-off time: 125µs On-state resistance: 100Ω Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Max. operating current: 50mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Operating temperature: -40...85°C |
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| OMA160STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 125µs Turn-off time: 125µs On-state resistance: 100Ω Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Max. operating current: 50mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Operating temperature: -40...85°C |
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IXFK220N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264 Case: TO264 Mounting: THT Kind of package: tube Drain-source voltage: 150V Drain current: 220A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Gate charge: 162nC Kind of channel: enhanced |
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DSA70C200HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V Type of diode: Schottky rectifying Power dissipation: 215W Mounting: THT Kind of package: tube Max. forward voltage: 0.79V Case: TO247-3 Semiconductor structure: common cathode; double Max. off-state voltage: 200V Load current: 35A x2 Max. forward impulse current: 0.55kA |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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DSEP29-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO220AC Max. forward voltage: 1.81V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
на замовлення 165 шт: термін постачання 21-30 дні (днів) |
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IXFA18N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns |
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IXFH18N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns |
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IXFP18N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns |
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IXFP18N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns |
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IXHH40N150HV | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA Mounting: THT Kind of package: tube Max. off-state voltage: 1.5kV Max. forward impulse current: 7.6kA Case: TO247HV Features of semiconductor devices: MOS-gated thyristor (MGT) Type of thyristor: thyristor |
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IXHX40N150V1HV | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA Mounting: THT Case: TO247PLUS-HV Kind of package: tube Max. forward impulse current: 7.6kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) Type of thyristor: thyristor Max. off-state voltage: 1.5kV |
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CPC1906Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.3Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Turn-on time: 10ms Turn-off time: 5ms Kind of output: MOSFET |
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IXTA90N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 90A Power dissipation: 150W Case: TO263 On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 37ns |
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IXTH90P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -90A Power dissipation: 462W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns |
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IXTK90N25L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Power dissipation: 960W Case: TO264 On-state resistance: 36mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 266ns |
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IXTK90P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264 Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO264 Reverse recovery time: 315ns Drain-source voltage: -200V Drain current: -90A On-state resistance: 44mΩ Type of transistor: P-MOSFET Power dissipation: 890W Gate charge: 205nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXTN90N25L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Pulsed drain current: 360A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 36mΩ Gate charge: 640nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 266ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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LOC110 | IXYS |
Category: Optocouplers - others Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Kind of output: photodiode Insulation voltage: 3.75kV Case: DIP8 |
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LOC110P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
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| LOC110PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
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LOC110S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; OUT: photodiode; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: photodiode Insulation voltage: 3.75kV |
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LOC110STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
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| MDD142-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
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IX4427N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -1.5...1.5A Case: SO8 Mounting: SMD Number of channels: 2 Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IX4427NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -1.5...1.5A Case: SO8 Mounting: SMD Number of channels: 2 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting |
на замовлення 734 шт: термін постачання 21-30 дні (днів) |
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IXGH48N60A3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
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IXGX120N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
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IXGX120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns |
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IXGX120N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 780W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 450nC Kind of package: tube Turn-on time: 123ns Turn-off time: 830ns |
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IXFK250N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Gate charge: 205nC Kind of channel: enhanced Drain-source voltage: 100V Drain current: 250A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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IXFX250N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 250A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.5mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| CPC1008N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
на замовлення 1827 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.88 грн |
| 13+ | 68.8 грн |
| 34+ | 65.18 грн |
| CPC1008NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
товар відсутній
| IXFH44N50P | |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 267 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 740.12 грн |
| 2+ | 538.79 грн |
| 5+ | 509.1 грн |
| IXFA5N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Case: TO263
товар відсутній
| IXFP5N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 347.83 грн |
| 5+ | 202.05 грн |
| 12+ | 191.18 грн |
| MII100-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A
Case: Y4-M5
Application: motors; photovoltaics
Power dissipation: 560W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 150A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A
Case: Y4-M5
Application: motors; photovoltaics
Power dissipation: 560W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 150A
товар відсутній
| MIEB101H1200EH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W
Topology: H-bridge
Technology: Sonic FRD™; SPT+
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 630W
Collector current: 128A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W
Topology: H-bridge
Technology: Sonic FRD™; SPT+
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 630W
Collector current: 128A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| MII145-12A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
товар відсутній
| DLA10IM800UC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 10A; DPAK; Ufmax: 1.16V; Ifsm: 120A; 75W
Mounting: SMD
Max. forward impulse current: 120A
Case: DPAK
Kind of package: reel; tape
Power dissipation: 75W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.16V
Load current: 10A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 10A; DPAK; Ufmax: 1.16V; Ifsm: 120A; 75W
Mounting: SMD
Max. forward impulse current: 120A
Case: DPAK
Kind of package: reel; tape
Power dissipation: 75W
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.16V
Load current: 10A
Semiconductor structure: single diode
товар відсутній
| CPC1017N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
на замовлення 1741 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 110.74 грн |
| 18+ | 47.8 грн |
| 49+ | 45.62 грн |
| CPC1017NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| IXXH30N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
товар відсутній
| IXYH30N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
| DSEE55-24N1F |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.56V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 85ns
Max. forward impulse current: 800A
Power dissipation: 250W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.56V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 85ns
Max. forward impulse current: 800A
Power dissipation: 250W
товар відсутній
| FMM22-06PF |
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Mounting: THT
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Mounting: THT
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1384.31 грн |
| 2+ | 1215.18 грн |
| IXBH16N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Turn-on time: 220ns
Turn-off time: 940ns
Type of transistor: IGBT
Power dissipation: 250W
Pulsed collector current: 120A
Collector current: 16A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Turn-on time: 220ns
Turn-off time: 940ns
Type of transistor: IGBT
Power dissipation: 250W
Pulsed collector current: 120A
Collector current: 16A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Case: TO247-3
товар відсутній
| IXBH16N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Pulsed collector current: 40A
Collector current: 10A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Pulsed collector current: 40A
Collector current: 10A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO247-3
товар відсутній
| IXFQ24N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFQ24N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO3P; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO3P; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
товар відсутній
| MCD224-20io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 390A
Threshold on-voltage: 0.72V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 390A
Threshold on-voltage: 0.72V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| CPC1035N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
на замовлення 1475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 186.39 грн |
| 11+ | 80.38 грн |
| 29+ | 76.04 грн |
| CPC1035NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
| IXFA90N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.99 грн |
| 2+ | 422.2 грн |
| 3+ | 407.72 грн |
| 6+ | 399.03 грн |
| 10+ | 383.82 грн |
| IXFH90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
товар відсутній
| IXFP90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.12 грн |
| 3+ | 309.95 грн |
| 8+ | 293.29 грн |
| IXFP90N20X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
товар відсутній
| IXFQ90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 661.35 грн |
| 2+ | 440.3 грн |
| 6+ | 416.41 грн |
| IXTA90N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
товар відсутній
| OMA160 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Control current max.: 50mA
Mounting: THT
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Control current max.: 50mA
Mounting: THT
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 336.91 грн |
| 6+ | 150.63 грн |
| 16+ | 141.94 грн |
| OMA160S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
On-state resistance: 100Ω
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
On-state resistance: 100Ω
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
товар відсутній
| OMA160STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
On-state resistance: 100Ω
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
On-state resistance: 100Ω
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
товар відсутній
| IXFK220N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 162nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 150V
Drain current: 220A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 162nC
Kind of channel: enhanced
товар відсутній
| DSA70C200HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Power dissipation: 215W
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.79V
Case: TO247-3
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 35A x2
Max. forward impulse current: 0.55kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Power dissipation: 215W
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.79V
Case: TO247-3
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 35A x2
Max. forward impulse current: 0.55kA
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 354.85 грн |
| 3+ | 296.19 грн |
| 4+ | 236.08 грн |
| 10+ | 223.05 грн |
| DSEP29-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 165 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.64 грн |
| 5+ | 181.05 грн |
| 13+ | 171.63 грн |
| IXFA18N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
товар відсутній
| IXFH18N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
товар відсутній
| IXFP18N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
товар відсутній
| IXFP18N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
товар відсутній
| IXHH40N150HV |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
Case: TO247HV
Features of semiconductor devices: MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
Case: TO247HV
Features of semiconductor devices: MOS-gated thyristor (MGT)
Type of thyristor: thyristor
товар відсутній
| IXHX40N150V1HV |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Mounting: THT
Case: TO247PLUS-HV
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Mounting: THT
Case: TO247PLUS-HV
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
товар відсутній
| CPC1906Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| IXTA90N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
товар відсутній
| IXTH90P10P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
товар відсутній
| IXTK90N25L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
товар відсутній
| IXTK90P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1150.34 грн |
| 3+ | 1010.24 грн |
| 25+ | 990.68 грн |
| IXTN90N25L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Gate charge: 640nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Gate charge: 640nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| LOC110 |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
товар відсутній
| LOC110P |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
товар відсутній
| LOC110PTR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
товар відсутній
| LOC110S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: photodiode
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: photodiode
Insulation voltage: 3.75kV
товар відсутній
| LOC110STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| MDD142-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IX4427N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.29 грн |
| 8+ | 48.81 грн |
| 23+ | 38.38 грн |
| IX4427NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
на замовлення 734 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.65 грн |
| 23+ | 38.38 грн |
| 61+ | 36.21 грн |
| IXGH48N60A3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товар відсутній
| IXGX120N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
товар відсутній
| IXGX120N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
товар відсутній
| IXGX120N60A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
товар відсутній
| IXFK250N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 205nC
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 250A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 205nC
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 250A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1307.1 грн |
| 2+ | 1147.83 грн |
| IXFX250N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
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