IXTP1N100P IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 198.84 грн |
50+ | 153.3 грн |
100+ | 126.13 грн |
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Технічний опис IXTP1N100P IXYS
Description: MOSFET N-CH 1000V 1A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V.
Інші пропозиції IXTP1N100P за ціною від 87.29 грн до 220.25 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXTP1N100P | Виробник : IXYS | MOSFETs 1 Amps 1000V 14 Rds |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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IXTP1N100P | Виробник : Littelfuse | Trans MOSFET N-CH 1KV 1A 3-Pin(3+Tab) TO-220 |
товару немає в наявності |
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IXTP1N100P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 1A On-state resistance: 15Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: THT Case: TO220AB кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTP1N100P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 1A On-state resistance: 15Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: THT Case: TO220AB |
товару немає в наявності |