Технічний опис IXTT16N10D2 Littelfuse
Description: MOSFET N-CH 100V 16A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 830W (Tc), Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V.
Інші пропозиції IXTT16N10D2
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IXTT16N10D2 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 830W Case: TO268 On-state resistance: 64mΩ Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 940ns кількість в упаковці: 1 шт |
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IXTT16N10D2 | Виробник : Littelfuse |
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) TO-268 |
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IXTT16N10D2 | Виробник : Littelfuse |
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) TO-268 |
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IXTT16N10D2 | Виробник : IXYS |
Description: MOSFET N-CH 100V 16A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 830W (Tc) Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V |
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IXTT16N10D2 | Виробник : IXYS |
MOSFET D2 Depletion Mode Power MOSFETs |
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IXTT16N10D2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 830W Case: TO268 On-state resistance: 64mΩ Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 940ns |
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