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IXKH47N60C IXYS
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Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
на замовлення 810 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
300+ | 1086.61 грн |
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Технічний опис IXKH47N60C IXYS
Description: MOSFET N-CH 600V 47A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 4V @ 2mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V.
Інші пропозиції IXKH47N60C
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXKH47N60C | Виробник : Littelfuse |
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товар відсутній |
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IXKH47N60C | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
товар відсутній |
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IXKH47N60C | Виробник : IXYS |
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товар відсутній |
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![]() |
IXKH47N60C | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
товар відсутній |