| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43DR82560C-3DBL | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C Mounting: SMD Case: TWBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Clock frequency: 333MHz Memory: 2Gb DRAM Kind of interface: parallel Memory organisation: 32Mx8bitx8 Kind of package: in-tray; tube Kind of memory: DDR2; SDRAM Supply voltage: 1.7...1.9V DC Access time: 5ns кількість в упаковці: 242 шт |
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| IS43DR86400E-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube кількість в упаковці: 242 шт |
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| IS43DR86400E-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube кількість в упаковці: 242 шт |
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| IS43DR86400E-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 15ns Clock frequency: 333MHz Kind of package: in-tray; tube кількість в упаковці: 242 шт |
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| IS43DR86400E-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 15ns Clock frequency: 333MHz Kind of package: in-tray; tube кількість в упаковці: 242 шт |
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| IS43DR86400E-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 15ns Clock frequency: 333MHz Kind of package: reel; tape кількість в упаковці: 2000 шт |
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| IS43DR86400E-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel; tape кількість в упаковці: 2000 шт |
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| IS43LD16128B-25BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: 0...85°C Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 2Gb DRAM Kind of interface: parallel Memory organisation: 16Mx8bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 171 шт |
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| IS43LD16128B-25BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: 0...85°C Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 2Gb DRAM Kind of interface: parallel Memory organisation: 16Mx8bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 2000 шт |
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| IS43LD16320A-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 171 шт |
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| IS43LD16640C-18BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 533MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 171 шт |
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| IS43LD16640C-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 171 шт |
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| IS43LD16640C-25BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 2000 шт |
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| IS43LD32128B-25BPLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 16Mx32bitx8; 400MHz; 18ns; TFBGA168 Type of integrated circuit: DRAM memory Case: TFBGA168 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 4Gb DRAM Kind of interface: parallel Memory organisation: 16Mx32bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 168 шт |
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| IS43LD32160A-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 4Mx32bitx4 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 171 шт |
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| IS43LD32160A-25BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 4Mx32bitx4 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 2000 шт |
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| IS43LD32320C-18BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory: 1Gb DRAM Memory organisation: 4Mx32bitx8 Clock frequency: 533MHz Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns кількість в упаковці: 171 шт |
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| IS43LD32320C-18BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory: 1Gb DRAM Memory organisation: 4Mx32bitx8 Clock frequency: 533MHz Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns кількість в упаковці: 2000 шт |
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| IS43LD32320C-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 4Mx32bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 171 шт |
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| IS43LD32320C-25BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 4Mx32bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns кількість в упаковці: 2000 шт |
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| IS43LD32640B-18BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 8Mx32bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory: 2Gb DRAM Memory organisation: 8Mx32bitx8 Clock frequency: 533MHz Case: TFBGA134 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns кількість в упаковці: 2000 шт |
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| IS43LD32640B-25BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx32bitx8; 400MHz; 18ns; TFBGA134; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory organisation: 8Mx32bitx8 Clock frequency: 400MHz Access time: 18ns Case: TFBGA134 Memory capacity: 2Gb Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC |
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| IS43LQ32256A-062BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DRAM; LPDDR4; SDRAM Memory: 8Gb DRAM Memory organisation: 256Mx16bitx2 Clock frequency: 1.6GHz Case: TFBGA200 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC кількість в упаковці: 136 шт |
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| IS43LR16160G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 300 шт |
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| IS43LR16160G-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2000 шт |
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| IS43LR16160G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 300 шт |
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| IS43LR16160G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2000 шт |
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| IS43LR16200D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Mounting: SMD Kind of package: in-tray; tube Case: TFBGA60 Kind of memory: LPDDR; SDRAM Memory organisation: 1Mx16bitx2 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 32Mb DRAM Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory кількість в упаковці: 240 шт |
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| IS43LR16320C-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2000 шт |
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| IS43LR16320C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 300 шт |
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| IS43LR16320C-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2000 шт |
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| IS43LR16400C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS43LR16640A-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Mounting: SMD Case: TWBGA60 Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 16Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 1Gb DRAM Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC кількість в упаковці: 300 шт |
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| IS43LR16640A-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Mounting: SMD Case: TWBGA60 Kind of package: reel; tape Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 16Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 1Gb DRAM Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC кількість в упаковці: 2000 шт |
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| IS43LR16800G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel кількість в упаковці: 300 шт |
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| IS43LR16800G-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel кількість в упаковці: 2000 шт |
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| IS43LR16800G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel кількість в упаковці: 300 шт |
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| IS43LR16800G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel кількість в упаковці: 2000 шт |
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| IS43LR32160C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 240 шт |
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| IS43LR32160C-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2500 шт |
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| IS43LR32320B-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 8Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: LFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 240 шт |
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| IS43LR32640A-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 240 шт |
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| IS43LR32640A-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 240 шт |
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| IS43LR32800G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC Access time: 6ns кількість в упаковці: 240 шт |
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| IS43LR32800G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC Access time: 6ns кількість в упаковці: 240 шт |
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| IS43LR32800G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC Access time: 6ns кількість в упаковці: 2500 шт |
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| IS43QR16256B-083RBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; 0÷95°C Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR4; SDRAM Memory organisation: 256Mx16bit Access time: 13.32ns Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: 0...95°C Supply voltage: 1.2V DC Type of integrated circuit: DRAM memory кількість в упаковці: 198 шт |
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| IS43QR16256B-083RBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; -40÷95°C Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR4; SDRAM Memory organisation: 256Mx16bit Access time: 13.32ns Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: -40...95°C Supply voltage: 1.2V DC Type of integrated circuit: DRAM memory кількість в упаковці: 198 шт |
товар відсутній |
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| IS43QR16512A-083TBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C Memory: 8Gb DRAM Kind of memory: DDR4; SDRAM Supply voltage: 1.2V DC Operating temperature: 0...95°C Mounting: SMD Kind of package: in-tray; tube Access time: 14.16ns Memory organisation: 512Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of interface: parallel кількість в упаковці: 136 шт |
товар відсутній |
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| IS43QR16512A-083TBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C Memory: 8Gb DRAM Kind of memory: DDR4; SDRAM Supply voltage: 1.2V DC Operating temperature: -40...95°C Mounting: SMD Kind of package: in-tray; tube Access time: 14.16ns Memory organisation: 512Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of interface: parallel кількість в упаковці: 136 шт |
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| IS43R16160F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 190 шт |
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| IS43R16160F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 2500 шт |
товар відсутній |
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| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 190 шт |
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| IS43R16160F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 1 шт |
товар відсутній |
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| IS43R16160F-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 1500 шт |
товар відсутній |
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| IS43R16160F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 1 шт |
товар відсутній |
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| IS43R16160F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 1500 шт |
товар відсутній |
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| IS43R16160F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 190 шт |
товар відсутній |
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| IS43R16160F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 2500 шт |
товар відсутній |
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| IS43R16160F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 1 шт |
товар відсутній |
| IS43DR82560C-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 333MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 32Mx8bitx8
Kind of package: in-tray; tube
Kind of memory: DDR2; SDRAM
Supply voltage: 1.7...1.9V DC
Access time: 5ns
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 333MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 32Mx8bitx8
Kind of package: in-tray; tube
Kind of memory: DDR2; SDRAM
Supply voltage: 1.7...1.9V DC
Access time: 5ns
кількість в упаковці: 242 шт
товар відсутній
| IS43DR86400E-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
товар відсутній
| IS43DR86400E-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
товар відсутній
| IS43DR86400E-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
товар відсутній
| IS43DR86400E-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
кількість в упаковці: 242 шт
товар відсутній
| IS43DR86400E-3DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: reel; tape
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: reel; tape
кількість в упаковці: 2000 шт
товар відсутній
| IS43DR86400E-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
кількість в упаковці: 2000 шт
товар відсутній
| IS43LD16128B-25BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx8bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx8bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
товар відсутній
| IS43LD16128B-25BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx8bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx8bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
товар відсутній
| IS43LD16320A-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
товар відсутній
| IS43LD16640C-18BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 533MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 533MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
товар відсутній
| IS43LD16640C-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
товар відсутній
| IS43LD16640C-25BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
товар відсутній
| IS43LD32128B-25BPLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 16Mx32bitx8; 400MHz; 18ns; TFBGA168
Type of integrated circuit: DRAM memory
Case: TFBGA168
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 4Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx32bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 168 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 16Mx32bitx8; 400MHz; 18ns; TFBGA168
Type of integrated circuit: DRAM memory
Case: TFBGA168
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 4Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx32bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 168 шт
товар відсутній
| IS43LD32160A-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
товар відсутній
| IS43LD32160A-25BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
товар відсутній
| IS43LD32320C-18BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 4Mx32bitx8
Clock frequency: 533MHz
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
кількість в упаковці: 171 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 4Mx32bitx8
Clock frequency: 533MHz
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
кількість в упаковці: 171 шт
товар відсутній
| IS43LD32320C-18BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 4Mx32bitx8
Clock frequency: 533MHz
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 4Mx32bitx8
Clock frequency: 533MHz
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
кількість в упаковці: 2000 шт
товар відсутній
| IS43LD32320C-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 171 шт
товар відсутній
| IS43LD32320C-25BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 4Mx32bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx8
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
кількість в упаковці: 2000 шт
товар відсутній
| IS43LD32640B-18BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 8Mx32bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 2Gb DRAM
Memory organisation: 8Mx32bitx8
Clock frequency: 533MHz
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 8Mx32bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 2Gb DRAM
Memory organisation: 8Mx32bitx8
Clock frequency: 533MHz
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
кількість в упаковці: 2000 шт
товар відсутній
| IS43LD32640B-25BL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bitx8; 400MHz; 18ns; TFBGA134; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bitx8
Clock frequency: 400MHz
Access time: 18ns
Case: TFBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bitx8; 400MHz; 18ns; TFBGA134; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bitx8
Clock frequency: 400MHz
Access time: 18ns
Case: TFBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
товар відсутній
| IS43LQ32256A-062BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM; LPDDR4; SDRAM
Memory: 8Gb DRAM
Memory organisation: 256Mx16bitx2
Clock frequency: 1.6GHz
Case: TFBGA200
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM; LPDDR4; SDRAM
Memory: 8Gb DRAM
Memory organisation: 256Mx16bitx2
Clock frequency: 1.6GHz
Case: TFBGA200
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
кількість в упаковці: 136 шт
товар відсутній
| IS43LR16160G-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
товар відсутній
| IS43LR16160G-6BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
товар відсутній
| IS43LR16160G-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
товар відсутній
| IS43LR16160G-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
товар відсутній
| IS43LR16200D-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Mounting: SMD
Kind of package: in-tray; tube
Case: TFBGA60
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx2
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 32Mb DRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Mounting: SMD
Kind of package: in-tray; tube
Case: TFBGA60
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx2
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 32Mb DRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 240 шт
товар відсутній
| IS43LR16320C-6BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
товар відсутній
| IS43LR16320C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
товар відсутній
| IS43LR16320C-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
товар відсутній
| IS43LR16400C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR16640A-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 300 шт
товар відсутній
| IS43LR16640A-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2000 шт
товар відсутній
| IS43LR16800G-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 300 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 300 шт
товар відсутній
| IS43LR16800G-6BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 2000 шт
товар відсутній
| IS43LR16800G-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 300 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 300 шт
товар відсутній
| IS43LR16800G-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
кількість в упаковці: 2000 шт
товар відсутній
| IS43LR32160C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
товар відсутній
| IS43LR32160C-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43LR32320B-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
товар відсутній
| IS43LR32640A-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
товар відсутній
| IS43LR32640A-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 240 шт
товар відсутній
| IS43LR32800G-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 240 шт
товар відсутній
| IS43LR32800G-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 240 шт
товар відсутній
| IS43LR32800G-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 2500 шт
товар відсутній
| IS43QR16256B-083RBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; 0÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 198 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; 0÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 198 шт
товар відсутній
| IS43QR16256B-083RBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; -40÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 198 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; -40÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 198 шт
товар відсутній
| IS43QR16512A-083TBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: 0...95°C
Mounting: SMD
Kind of package: in-tray; tube
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: 0...95°C
Mounting: SMD
Kind of package: in-tray; tube
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
кількість в упаковці: 136 шт
товар відсутній
| IS43QR16512A-083TBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: -40...95°C
Mounting: SMD
Kind of package: in-tray; tube
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: -40...95°C
Mounting: SMD
Kind of package: in-tray; tube
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
кількість в упаковці: 136 шт
товар відсутній
| IS43R16160F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43R16160F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43R16160F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43R16160F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
товар відсутній
| IS43R16160F-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43R16160F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
товар відсутній
| IS43R16160F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43R16160F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43R16160F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43R16160F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
товар відсутній