Технічний опис IS43R16160F-5TLI-TR ISSI
Description: IC DRAM 256MBIT PAR 66TSOP II, Packaging: Tape & Reel (TR), Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP II, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43R16160F-5TLI-TR
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| IS43R16160F-5TLI-TR | Виробник : ISSI |
 DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP-II T/R |
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| IS43R16160F-5TLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 1500 шт |
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IS43R16160F-5TLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 66TSOP II Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
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IS43R16160F-5TLI-TR | Виробник : ISSI |
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT, T&R |
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| IS43R16160F-5TLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товар відсутній |