Технічний опис IS43LR16200D-6BLI ISSI
Description: IC DRAM 32MBIT PARALLEL 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 2M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43LR16200D-6BLI
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS43LR16200D-6BLI | Виробник : ISSI |
![]() Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Mounting: SMD Kind of package: in-tray; tube Case: TFBGA60 Kind of memory: LPDDR; SDRAM Memory organisation: 1Mx16bitx2 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 32Mb DRAM Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory кількість в упаковці: 240 шт |
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IS43LR16200D-6BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
![]() Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 2M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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IS43LR16200D-6BLI | Виробник : ISSI |
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товар відсутній |
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IS43LR16200D-6BLI | Виробник : ISSI |
![]() Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Mounting: SMD Kind of package: in-tray; tube Case: TFBGA60 Kind of memory: LPDDR; SDRAM Memory organisation: 1Mx16bitx2 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 32Mb DRAM Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory |
товар відсутній |