Технічний опис IS43LR16400C-6BLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: LPDDR; SDRAM, Memory organisation: 1Mx16bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA60, Memory capacity: 64Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 1.7...1.95V DC.
Інші пропозиції IS43LR16400C-6BLI
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| IS43LR16400C-6BLI | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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IS43LR16400C-6BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64M PARALLEL 60TFBGA |
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| IS43LR16400C-6BLI | Виробник : ISSI |
DRAM 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS |
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| IS43LR16400C-6BLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товар відсутній |