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IS43LD32640B-25BL-TR ISSI


Виробник: ISSI
2G, 1.2/1.8V, LPDDR2, 64Mx32, 400MHz, 134 ball BGA (10mmx11.5mm) RoHS, T&R
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Технічний опис IS43LD32640B-25BL-TR ISSI

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 8Mx32bitx8; 400MHz; 18ns; TFBGA134; 0÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: LPDDR2; SDRAM, Memory organisation: 8Mx32bitx8, Clock frequency: 400MHz, Access time: 18ns, Case: TFBGA134, Memory capacity: 2Gb, Mounting: SMD, Operating temperature: 0...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC.

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IS43LD32640B-25BL-TR Виробник : ISSI Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bitx8; 400MHz; 18ns; TFBGA134; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bitx8
Clock frequency: 400MHz
Access time: 18ns
Case: TFBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
товар відсутній
IS43LD32640B-25BL-TR IS43LD32640B-25BL-TR Виробник : ISSI 43_46LD16128B_32640B-1108826.pdf DRAM 2G, 1.2/1.8V, LPDDR2, 64Mx32, 400MHz, 134 ball BGA (10mmx11.5mm) RoHS, T&R
товар відсутній
IS43LD32640B-25BL-TR Виробник : ISSI Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx32bitx8; 400MHz; 18ns; TFBGA134; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 8Mx32bitx8
Clock frequency: 400MHz
Access time: 18ns
Case: TFBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
товар відсутній