на замовлення 242 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 723.63 грн |
| 10+ | 657.19 грн |
| 25+ | 558.92 грн |
| 50+ | 556.83 грн |
| 100+ | 499.69 грн |
| 242+ | 485.05 грн |
| 484+ | 460.66 грн |
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Технічний опис IS43DR82560C-3DBL ISSI
Description: IC DRAM 2GBIT PARALLEL 60TWBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 333 MHz, Memory Format: DRAM, Supplier Device Package: 60-TWBGA (8x10.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 450 ps, Memory Organization: 256M x 8.
Інші пропозиції IS43DR82560C-3DBL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IS43DR82560C-3DBL | Виробник : ISSI |
 256Mx8, 128Mx16 DDR2 DRAM |
товар відсутній |
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| IS43DR82560C-3DBL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C Mounting: SMD Case: TWBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Clock frequency: 333MHz Memory: 2Gb DRAM Kind of interface: parallel Memory organisation: 32Mx8bitx8 Kind of package: in-tray; tube Kind of memory: DDR2; SDRAM Supply voltage: 1.7...1.9V DC Access time: 5ns кількість в упаковці: 242 шт |
товар відсутній |
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%20Renders/706;-60TWBGA-1.1-10x8;-;-60.jpg "IS43DR82560C-3DBL") |
IS43DR82560C-3DBL | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 60TWBGA Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 333 MHz Memory Format: DRAM Supplier Device Package: 60-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 450 ps Memory Organization: 256M x 8 |
товар відсутній |
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| IS43DR82560C-3DBL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C Mounting: SMD Case: TWBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Clock frequency: 333MHz Memory: 2Gb DRAM Kind of interface: parallel Memory organisation: 32Mx8bitx8 Kind of package: in-tray; tube Kind of memory: DDR2; SDRAM Supply voltage: 1.7...1.9V DC Access time: 5ns |
товар відсутній |