| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS42VM16200D-75BLI | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 32Mb Kind of interface: parallel Memory organisation: 1Mx16bitx2 Case: TFBGA54 Mounting: SMD кількість в упаковці: 348 шт |
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| IS42VM16200D-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 32Mb Kind of interface: parallel Memory organisation: 1Mx16bitx2 Case: TFBGA54 Mounting: SMD кількість в упаковці: 2500 шт |
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| IS42VM16320E-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 348 шт |
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| IS42VM16320E-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2500 шт |
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| IS42VM16320E-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC кількість в упаковці: 348 шт |
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| IS42VM16320E-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2500 шт |
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| IS42VM16400M-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 166MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns кількість в упаковці: 348 шт |
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| IS42VM16400M-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 7.5ns кількість в упаковці: 348 шт |
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| IS42VM16400M-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: reel; tape Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 7.5ns кількість в упаковці: 2500 шт |
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| IS42VM16800H-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 128Mb DRAM Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 348 шт |
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| IS42VM16800H-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 2Mx16bitx4 Case: TFBGA54 Mounting: SMD кількість в упаковці: 348 шт |
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| IS42VM16800H-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 2Mx16bitx4 Case: TFBGA54 Mounting: SMD кількість в упаковці: 2500 шт |
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| IS42VM32160E-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS42VM32160E-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS42VM32160E-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 512Mb Kind of interface: parallel Memory organisation: 4Mx32bitx4 Case: TFBGA90 Mounting: SMD кількість в упаковці: 240 шт |
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| IS42VM32160E-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS42VM32200M-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 7.5ns Clock frequency: 133MHz кількість в упаковці: 240 шт |
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| IS42VM32200M-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 7.5ns Clock frequency: 133MHz кількість в упаковці: 2500 шт |
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| IS42VM32400H-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Clock frequency: 166MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: in-tray; tube Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C кількість в упаковці: 240 шт |
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| IS42VM32400H-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Clock frequency: 166MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: reel; tape Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C кількість в упаковці: 2500 шт |
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| IS42VM32400H-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Clock frequency: 133MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: in-tray; tube Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 7.5ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C кількість в упаковці: 240 шт |
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| IS42VM32400H-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Clock frequency: 133MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: reel; tape Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 7.5ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C кількість в упаковці: 2500 шт |
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| IS42VM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Operating temperature: -40...85°C Kind of interface: parallel Memory: 256Mb DRAM Mounting: SMD Case: TFBGA90 Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube кількість в упаковці: 240 шт |
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| IS42VM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Kind of interface: parallel Memory: 256Mb DRAM Mounting: SMD Case: TFBGA90 Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Access time: 7.5ns Clock frequency: 133MHz Kind of package: in-tray; tube кількість в упаковці: 240 шт |
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| IS43DR16128C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
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| IS43DR16128C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
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| IS43DR16128C-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 15ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 333MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16128C-3DBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 15ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 333MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC кількість в упаковці: 2500 шт |
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| IS43DR16128C-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 15ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 333MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16128C-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 15ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 333MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC кількість в упаковці: 2500 шт |
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| IS43DR16128C-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 2500 шт |
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| IS43DR16160B-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
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| IS43DR16160B-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
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| IS43DR16160B-25DBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: 0...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 2500 шт |
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| IS43DR16160B-37CBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 266MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16160B-37CBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 266MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16160B-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16160B-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16160B-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC кількість в упаковці: 2500 шт |
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| IS43DR16160B-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 2500 шт |
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| IS43DR16160B-37CBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 266MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC кількість в упаковці: 2500 шт |
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| IS43DR16320E-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
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| IS43DR16320E-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
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| IS43DR16320E-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16320E-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC кількість в упаковці: 209 шт |
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| IS43DR16320E-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC кількість в упаковці: 2500 шт |
товар відсутній |
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| IS43DR16320E-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 2500 шт |
товар відсутній |
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| IS43DR16640C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
товар відсутній |
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| IS43DR16640C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 209 шт |
товар відсутній |
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| IS43DR16640C-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товар відсутній |
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| IS43DR16640C-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товар відсутній |
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| IS43DR16640C-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товар відсутній |
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| IS43DR16640C-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 8Mx16bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 2500 шт |
товар відсутній |
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| IS43DR81280C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 242 шт |
товар відсутній |
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| IS43DR81280C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 242 шт |
товар відсутній |
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| IS43DR81280C-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60; 0÷85°C Supply voltage: 1.7...1.9V DC Operating temperature: 0...85°C Kind of package: in-tray; tube Memory organisation: 16Mx8bitx8 Access time: 15ns Clock frequency: 333MHz Kind of interface: parallel Memory: 1Gb DRAM Mounting: SMD Case: TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM кількість в упаковці: 242 шт |
товар відсутній |
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| IS43DR81280C-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60 Supply voltage: 1.7...1.9V DC Operating temperature: -40...85°C Kind of package: in-tray; tube Memory organisation: 16Mx8bitx8 Access time: 15ns Clock frequency: 333MHz Kind of interface: parallel Memory: 1Gb DRAM Mounting: SMD Case: TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM кількість в упаковці: 242 шт |
товар відсутній |
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| IS43DR81280C-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 2000 шт |
товар відсутній |
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| IS43DR82560C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 5ns Memory organisation: 32Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 242 шт |
товар відсутній |
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| IS43DR82560C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 5ns Memory organisation: 32Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 242 шт |
товар відсутній |
| IS42VM16200D-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 348 шт
товар відсутній
| IS42VM16200D-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM16320E-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 348 шт
товар відсутній
| IS42VM16320E-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM16320E-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 348 шт
товар відсутній
| IS42VM16320E-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM16400M-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 166MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 166MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
кількість в упаковці: 348 шт
товар відсутній
| IS42VM16400M-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
кількість в упаковці: 348 шт
товар відсутній
| IS42VM16400M-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: reel; tape
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: reel; tape
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM16800H-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 128Mb DRAM
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 128Mb DRAM
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
товар відсутній
| IS42VM16800H-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 348 шт
товар відсутній
| IS42VM16800H-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM32160E-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM32160E-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM32160E-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
кількість в упаковці: 240 шт
товар відсутній
| IS42VM32160E-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM32200M-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
кількість в упаковці: 240 шт
товар відсутній
| IS42VM32200M-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM32400H-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 240 шт
товар відсутній
| IS42VM32400H-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM32400H-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 240 шт
товар відсутній
| IS42VM32400H-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
кількість в упаковці: 2500 шт
товар відсутній
| IS42VM32800K-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
кількість в упаковці: 240 шт
товар відсутній
| IS42VM32800K-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Kind of package: in-tray; tube
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Kind of package: in-tray; tube
кількість в упаковці: 240 шт
товар відсутній
| IS43DR16128C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16128C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16128C-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16128C-3DBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16128C-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16128C-3DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16128C-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16160B-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16160B-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16160B-25DBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16160B-37CBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16160B-37CBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16160B-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16160B-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16160B-3DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16160B-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16160B-37CBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16320E-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16320E-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16320E-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16320E-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16320E-3DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16320E-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR16640C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16640C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 209 шт
товар відсутній
| IS43DR16640C-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS43DR16640C-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS43DR16640C-3DBLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS43DR16640C-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2500 шт
товар відсутній
| IS43DR81280C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
товар відсутній
| IS43DR81280C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
товар відсутній
| IS43DR81280C-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60; 0÷85°C
Supply voltage: 1.7...1.9V DC
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Memory organisation: 16Mx8bitx8
Access time: 15ns
Clock frequency: 333MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60; 0÷85°C
Supply voltage: 1.7...1.9V DC
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Memory organisation: 16Mx8bitx8
Access time: 15ns
Clock frequency: 333MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
кількість в упаковці: 242 шт
товар відсутній
| IS43DR81280C-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60
Supply voltage: 1.7...1.9V DC
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Memory organisation: 16Mx8bitx8
Access time: 15ns
Clock frequency: 333MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60
Supply voltage: 1.7...1.9V DC
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Memory organisation: 16Mx8bitx8
Access time: 15ns
Clock frequency: 333MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
кількість в упаковці: 242 шт
товар відсутній
| IS43DR81280C-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 2000 шт
товар відсутній
| IS43DR82560C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
товар відсутній
| IS43DR82560C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
кількість в упаковці: 242 шт
товар відсутній