Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS43TR16640C-125JBLI | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Operating temperature: -40...95°C Mounting: SMD Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA96 кількість в упаковці: 190 шт |
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IS43TR16640CL-125JBL | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Operating temperature: 0...95°C Mounting: SMD Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA96 кількість в упаковці: 190 шт |
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IS43TR16640CL-107MBLI | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Operating temperature: -40...95°C Case: TWBGA96 кількість в упаковці: 190 шт |
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IS43TR16640CL-125JBLI | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Supply voltage: 1.35V DC Operating temperature: -40...95°C Mounting: SMD Memory: 1Gb DRAM Case: TWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel кількість в упаковці: 190 шт |
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IS43TR16K01S2AL-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96 Kind of package: in-tray; tube Operating temperature: -40...95°C Memory organisation: 1Gx16bit Access time: 13.75ns Clock frequency: 800MHz Kind of interface: parallel Memory: 16Gb DRAM Mounting: SMD Case: LWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM кількість в упаковці: 136 шт |
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IS43TR16K01S2AL-125KBL | ISSI |
![]() Description: IC: DRAM memory; 1Gx16bit; 800MHz; 13.75ns; LWBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx16bit Clock frequency: 800MHz Access time: 13.75ns Case: LWBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
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IS43TR81024B-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA78 Memory: 8Gb DRAM Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Access time: 13.75ns Clock frequency: 933MHz кількість в упаковці: 136 шт |
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IS43TR81024BL-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Supply voltage: 1.35V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 8Gb DRAM Case: TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 1Gx8bit Access time: 13.75ns Clock frequency: 933MHz кількість в упаковці: 136 шт |
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IS43TR82560D-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA78 Memory: 2Gb DRAM Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 256Mx8bit Access time: 13.75ns Clock frequency: 1066MHz кількість в упаковці: 242 шт |
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IS43TR82560D-125KBLI-TR | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel; tape Kind of interface: parallel Case: TWBGA78 Memory: 2Gb DRAM Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 256Mx8bit Access time: 13.75ns Clock frequency: 1066MHz кількість в упаковці: 2000 шт |
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IS43TR82560DL-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA78 Memory: 2Gb DRAM Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx8bit Access time: 13.75ns Clock frequency: 1066MHz кількість в упаковці: 242 шт |
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IS43TR82560DL-125KBLI-TR | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel; tape Kind of interface: parallel Case: TWBGA78 Memory: 2Gb DRAM Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx8bit Access time: 13.75ns Clock frequency: 1066MHz кількість в упаковці: 2000 шт |
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IS43TR85120BL-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Supply voltage: 1.35V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Gb DRAM Case: TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx8bit Access time: 13.75ns Clock frequency: 1066MHz кількість в упаковці: 242 шт |
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IS45S16100H-7BLA1 | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
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IS45S16100H-7BLA2 | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
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IS45S16100H-7BLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS45S16100H-7TLA2 | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS45S16100H-7TLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1000 шт |
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IS45S16160J-6BLA1 | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 348 шт |
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IS45S16160J-6BLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 2500 шт |
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IS45S16160J-6TLA1 | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 1 шт |
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IS45S16160J-6TLA1 -TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16160J-7BLA1 | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 348 шт |
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IS45S16160J-7BLA2 | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...105°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 348 шт |
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IS45S16160J-7BLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...105°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 2500 шт |
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IS45S16160J-7TLA1 | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 1 шт |
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IS45S16160J-7TLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16160J-7TLA2 | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 1 шт |
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IS45S16160J-7TLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 1500 шт |
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IS45S16320F-6BLA1 | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
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IS45S16320F-6TLA1 | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
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IS45S16320F-6TLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16320F-7BLA1 | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
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IS45S16320F-7BLA2 | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
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IS45S16320F-7CTLA1 | ISSI |
![]() Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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IS45S16320F-7CTLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16320F-7CTLA2 | ISSI |
![]() Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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IS45S16320F-7CTLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: reel; tape Memory: 512Mb DRAM Supply voltage: 3...3.6V DC Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel кількість в упаковці: 1500 шт |
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IS45S16320F-7TLA1 | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
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IS45S16320F-7TLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16320F-7TLA2 | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
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IS45S16320F-7TLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS45S16400J-6BLA1 | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS45S16400J-6BLA2 | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS45S16400J-6CTLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16400J-6TLA1 | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS45S16400J-6TLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16400J-7BLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS45S16400J-7BLA2 | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS45S16400J-7BLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS45S16400J-7CTLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16400J-7TLA1 | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS45S16400J-7TLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS45S16400J-7TLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS45S16800F-6BLA1 | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
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IS45S16800F-6BLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
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IS45S16800F-6CTLA1 | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
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IS45S16800F-6TLA1 | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
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IS45S16800F-6TLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
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IS45S16800F-7BLA1 | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
товар відсутній |
IS43TR16640C-125JBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: -40...95°C
Mounting: SMD
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: -40...95°C
Mounting: SMD
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній
IS43TR16640CL-125JBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній
IS43TR16640CL-107MBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній
IS43TR16640CL-125JBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Supply voltage: 1.35V DC
Operating temperature: -40...95°C
Mounting: SMD
Memory: 1Gb DRAM
Case: TWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Supply voltage: 1.35V DC
Operating temperature: -40...95°C
Mounting: SMD
Memory: 1Gb DRAM
Case: TWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
кількість в упаковці: 190 шт
товар відсутній
IS43TR16K01S2AL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Memory organisation: 1Gx16bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 16Gb DRAM
Mounting: SMD
Case: LWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Memory organisation: 1Gx16bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 16Gb DRAM
Mounting: SMD
Case: LWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
кількість в упаковці: 136 шт
товар відсутній
IS43TR16K01S2AL-125KBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx16bit; 800MHz; 13.75ns; LWBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx16bit; 800MHz; 13.75ns; LWBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товар відсутній
IS43TR81024B-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Memory: 8Gb DRAM
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Memory: 8Gb DRAM
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
кількість в упаковці: 136 шт
товар відсутній
IS43TR81024BL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Case: TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Case: TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
кількість в упаковці: 136 шт
товар відсутній
IS43TR82560D-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 242 шт
товар відсутній
IS43TR82560D-125KBLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 2000 шт
товар відсутній
IS43TR82560DL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 242 шт
товар відсутній
IS43TR82560DL-125KBLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA78
Memory: 2Gb DRAM
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 2000 шт
товар відсутній
IS43TR85120BL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Case: TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Case: TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx8bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 242 шт
товар відсутній
IS45S16100H-7BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
товар відсутній
IS45S16100H-7BLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
товар відсутній
IS45S16100H-7BLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS45S16100H-7TLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS45S16100H-7TLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1000 шт
товар відсутній
IS45S16160J-6BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
товар відсутній
IS45S16160J-6BLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
товар відсутній
IS45S16160J-6TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
товар відсутній
IS45S16160J-6TLA1 -TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16160J-7BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
товар відсутній
IS45S16160J-7BLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
товар відсутній
IS45S16160J-7BLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 2500 шт
товар відсутній
IS45S16160J-7TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
товар відсутній
IS45S16160J-7TLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16160J-7TLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
товар відсутній
IS45S16160J-7TLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1500 шт
товар відсутній
IS45S16320F-6BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
IS45S16320F-6TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
IS45S16320F-6TLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16320F-7BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
IS45S16320F-7BLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
IS45S16320F-7CTLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
IS45S16320F-7CTLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16320F-7CTLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
IS45S16320F-7CTLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 512Mb DRAM
Supply voltage: 3...3.6V DC
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 512Mb DRAM
Supply voltage: 3...3.6V DC
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
кількість в упаковці: 1500 шт
товар відсутній
IS45S16320F-7TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
IS45S16320F-7TLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16320F-7TLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
IS45S16320F-7TLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS45S16400J-6BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS45S16400J-6BLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS45S16400J-6CTLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16400J-6TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS45S16400J-6TLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16400J-7BLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS45S16400J-7BLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS45S16400J-7BLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS45S16400J-7CTLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16400J-7TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS45S16400J-7TLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS45S16400J-7TLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS45S16800F-6BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній
IS45S16800F-6BLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
IS45S16800F-6CTLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
IS45S16800F-6TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
товар відсутній
IS45S16800F-6TLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
IS45S16800F-7BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній