Фото | Назва | Виробник | Інформація |
Доступність |
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IS25WP128F-RHLA3-TR | ISSI |
![]() Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 1.65...1.95V |
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IS25WP128F-RMLE-TR | ISSI |
![]() Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 1.65...1.95V |
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IS25WX128-JHLA3 | ISSI |
![]() Description: IC: FLASH memory; 128MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Interface: xSPI Operating frequency: 200MHz Kind of interface: serial Memory: 128Mb FLASH Mounting: SMD Operating temperature: -40...125°C Case: TFBGA24 Operating voltage: 1.7...2V Type of integrated circuit: FLASH memory Kind of memory: Flash Kind of package: in-tray; tube |
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IS25WP512M-JLLE | ISSI |
![]() Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 112MHz Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V |
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IS25WP512M-JLLE-TR | ISSI |
![]() Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 112MHz Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V |
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IS25WP512M-RHLA3-TR | ISSI |
![]() Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...125°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 112MHz Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V |
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IS25WP512M-RHLE | ISSI |
![]() Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 112MHz Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V |
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IS25WP512M-RHLE-TR | ISSI |
![]() Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 112MHz Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V |
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IS25WP512M-RMLE-TR | ISSI |
![]() Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SO16 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 112MHz Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V |
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IS25WX512M-JHLA3 | ISSI |
![]() Description: IC: FLASH memory; 512MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Interface: xSPI Operating frequency: 200MHz Kind of interface: serial Memory: 512Mb FLASH Mounting: SMD Operating temperature: -40...125°C Case: TFBGA24 Operating voltage: 1.7...2V Type of integrated circuit: FLASH memory Kind of memory: Flash Kind of package: in-tray; tube |
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IS64WV51216EDBLL-10BLA3 | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS64WV51216EDBLL-10BLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS61WV51216EDBLL-10BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS61WV51216EDBLL-10BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS64WV51216EDBLL-10CTLA3 | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS64WV51216EDBLL-10CTLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS61WV51216EDBLL-8BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 8ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS61WV51216EEBLL-10BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS61WV51216EEBLL-10BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS61WV51216EEBLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS62C51216AL-55TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...5.5V |
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IS61WV51216BLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 270 шт: термін постачання 21-30 дні (днів) |
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IS62C10248AL-55TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...5.5V |
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IS62C1024AL-35QLI-TR | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; SO32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 35ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS62C1024AL-35TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 35ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS62C10248AL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...5.5V |
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IS62C1024AL-35QLI | ISSI |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 35ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating voltage: 4.5...5.5V |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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IS62C5128BL-45TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel Mounting: SMD Operating temperature: -40...85°C Case: TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 45ns Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 5V |
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IS66WVS1M8BLL-104NLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 3V Kind of package: in-tray; tube |
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IS65WV12816BLL-55TLA3 | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
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IS65WV12816BLL-55TLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.5...3.6V |
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IS64WV12816DBLL-12CTLA3 | ISSI |
![]() Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS64WV12816DBLL-12CTLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS61WV12816EDBLL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS63WV1288DBLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS63WV1288DBLL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS61WV1288EEBLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS61WV1288EEBLL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS61C3216AL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS61C3216AL-12TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS61C6416AL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Operating voltage: 5V Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 12ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IS61C6416AL-12TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Operating voltage: 5V Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 12ns |
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IS61C5128AL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS61C5128AL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS61LV12816L-10TLI | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 10ns |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IS61LV12816L-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 10ns |
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IS61LV25616AL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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IS61LV25616AL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns |
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IS61LV5128AL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 10ns |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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IS61LV5128AL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 10ns |
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IS61WV10248BLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 8Mb SRAM Operating voltage: 2.4...3.6V Kind of memory: SRAM Memory organisation: 1Mx8bit Access time: 10ns |
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IS61WV10248BLL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 8Mb SRAM Operating voltage: 2.4...3.6V Kind of memory: SRAM Memory organisation: 1024kx8bit Access time: 10ns |
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IS61WV10248EDBLL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 8Mb SRAM Operating voltage: 2.4...3.6V Kind of memory: SRAM Memory organisation: 1024kx8bit Access time: 10ns |
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IS61WV10248EDBLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS61WV12816BLL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
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IS61WV12816BLL-12TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
товар відсутній |
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IS61WV12816DBLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IS61WV12816DBLL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS61WV12816EDBLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS61WV20488BLL-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
товар відсутній |
IS25WP128F-RHLA3-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
товар відсутній
IS25WP128F-RMLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
товар відсутній
IS25WX128-JHLA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
товар відсутній
IS25WP512M-JLLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
товар відсутній
IS25WP512M-JLLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
товар відсутній
IS25WP512M-RHLA3-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
товар відсутній
IS25WP512M-RHLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
товар відсутній
IS25WP512M-RHLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
товар відсутній
IS25WP512M-RMLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 112MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 112MHz
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
товар відсутній
IS25WX512M-JHLA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
товар відсутній
IS64WV51216EDBLL-10BLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216EDBLL-10BLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216EDBLL-10BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216EDBLL-10BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216EDBLL-10CTLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216EDBLL-10CTLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216EDBLL-8BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216EEBLL-10BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216EEBLL-10BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216EEBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS62C51216AL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
товар відсутній
IS61WV51216BLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 270 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1245.6 грн |
3+ | 1093.49 грн |
100+ | 1051.89 грн |
IS62C10248AL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
товар відсутній
IS62C1024AL-35QLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C1024AL-35TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C10248AL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
товар відсутній
IS62C1024AL-35QLI | ![]() |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
на замовлення 89 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 319.2 грн |
3+ | 274.86 грн |
5+ | 206.51 грн |
12+ | 195.37 грн |
84+ | 185.71 грн |
IS62C5128BL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
товар відсутній
IS66WVS1M8BLL-104NLI |
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Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 3V
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 3V
Kind of package: in-tray; tube
товар відсутній
IS65WV12816BLL-55TLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
IS65WV12816BLL-55TLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
IS64WV12816DBLL-12CTLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV12816DBLL-12CTLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV12816EDBLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS63WV1288DBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
IS63WV1288DBLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV1288EEBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV1288EEBLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61C3216AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS61C3216AL-12TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS61C6416AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 12ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 400 грн |
IS61C6416AL-12TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 12ns
товар відсутній
IS61C5128AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS61C5128AL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS61LV12816L-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 472 грн |
3+ | 322.4 грн |
8+ | 304.57 грн |
IS61LV12816L-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
товар відсутній
IS61LV25616AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
на замовлення 16 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 630.4 грн |
2+ | 447.2 грн |
6+ | 422.69 грн |
IS61LV25616AL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
товар відсутній
IS61LV5128AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 10ns
на замовлення 68 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 353.6 грн |
3+ | 317.2 грн |
5+ | 316.46 грн |
8+ | 299.37 грн |
25+ | 286 грн |
IS61LV5128AL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 10ns
товар відсутній
IS61WV10248BLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 8Mb SRAM
Operating voltage: 2.4...3.6V
Kind of memory: SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 8Mb SRAM
Operating voltage: 2.4...3.6V
Kind of memory: SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
товар відсутній
IS61WV10248BLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 8Mb SRAM
Operating voltage: 2.4...3.6V
Kind of memory: SRAM
Memory organisation: 1024kx8bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 8Mb SRAM
Operating voltage: 2.4...3.6V
Kind of memory: SRAM
Memory organisation: 1024kx8bit
Access time: 10ns
товар відсутній
IS61WV10248EDBLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 8Mb SRAM
Operating voltage: 2.4...3.6V
Kind of memory: SRAM
Memory organisation: 1024kx8bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 8Mb SRAM
Operating voltage: 2.4...3.6V
Kind of memory: SRAM
Memory organisation: 1024kx8bit
Access time: 10ns
товар відсутній
IS61WV10248EDBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV12816BLL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
IS61WV12816BLL-12TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
IS61WV12816DBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 332 грн |
IS61WV12816DBLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV12816EDBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV20488BLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній